Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process

gamma-Al2O3 films were grown on Si (10 0) substrates using the sources of TMA (AI(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the,gamma-Al2O3 film prepared at a temperature of 1000degreesC has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between 0, and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties Of gamma-Al2O3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of gamma-Al2O3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the gamma-Al2O3 films were annealed for I h in O-2 atmosphere. (C) 2002 Elsevier Science B.V. All rights reserved.

Raman-forbidden mode and oxygen ordering in Bi2Sr2-xLaxCuO6+gamma single crystals annealed in oxygen

A Raman-forbidden phonon mode at about 840 cm(-1) is observed popularly on the surface of pun and La-doped Bi2Sr2-xLaxCuO6+y (0 less than or equal to x less than or equal to 0.8) single crystals annealed in oxygen. A remarkable excitation dependence of this additional line is found. Based on the properties of the structure of the Bi-O layer with excess oxygen atoms and the similarity in the appearance of the Raman-forbidden modes between RBa2Cu3Ox (R = Y, Nd, Gd, Pr) and Bi2Sr2-xLaxCuO6+y systems, we attribute the manifestation of this additional line to the ordering of the interstitial oxygen in the Bi-O layers. Our results provide Raman evidences for confirming that the ordering of the movable oxygen may exist universally in high-temperature superconductors.

Wurtzite GaN epitaxial growth on a Si(001) substrate using gamma-Al2O3 as an intermediate layer

Wurtzite GaN films have been grown on (001) Si substrates using gamma-Al2O3 as an intermediate layer by low pressure (similar to 76 Torr) metalorganic chemical vapor deposition. Reflection high energy electron diffraction and double crystal x-ray diffraction measurements revealed that the thin gamma-Al2O3 layer of "compliant" character was an effective intermediate layer for the GaN film grown epitaxially on Si. The narrowest linewidth of the x-ray rocking curve for (0002) diffraction of the 1.3 mu m GaN sample was 54 arcmin. The orientation relationship of GaN/gamma-Al2O3/Si was (0001) GaN parallel to(001) gamma-Al2O3 parallel to(001) Si, [11-20] GaN parallel to[110] gamma-Al2O3 parallel to[110] Si. The photoluminescence measurement for GaN at room temperature exhibited a near band-edge peak of 365 nm (3.4 eV). (C) 1998 American Institute of Physics.

Upgrading of liquid fuel from the vacuum pyrolysis of biomass over the Mo-Ni/gamma-Al2O3 catalysts

High amounts of acid compounds in bio-oil not only lead to the deleterious properties such as corrosiveness and high acidity, but also set up many obstacles to its wide applications. By hydrotreating the bio-oil under mild conditions, some carboxylic acid compounds could be converted to alcohols which would esterify with the unconverted acids in the bio-oil to produce esters. The properties of the bio-oil could be improved by this method. In the paper, the raw bio-oil was produced by vacuum pyrolysis of pine sawdust. The optimal production conditions were investigated. A series of nickel-based catalysts were prepared. Their catalytic activities were evaluated by upgrading of model compound (glacial acetic acid). Results showed that the reduced Mo-10Ni/gamma-Al2O3 catalyst had the highest activity with the acetic acid conversion of 33.2%. Upgrading of the raw bio-oil was investigated over reduced Mo-10Ni/gamma-Al2O3 catalyst. After the upgrading process, the pH value of the bio-oil increased from 2.16 to 2.84. The water content increased from 46.2 wt.% to 58.99 wt.%. The H element content in the bio-oil increased from 6.61 wt.% to 6.93 wt.%. The dynamic viscosity decreased a little. The results of GC-MS spectrometry analysis showed that the ester compounds in the upgraded bio-oil increased by 3 times. it is possible to improve the properties of bio-oil by hydrotreating and esterifying carboxyl group compounds in the bio-oil.

MoNi/gamma-Al2O3 Catalyst: Preparation and Catalytic Activity for Acetic Acid Hydrotreating

MoNi/gamma-Al2O3 catalysts were prepared by the impregnation method. The catalyst samples were characterized by XRD and TPR. The effects of Mo promoter content and the catalyst reducing temperature Oil hydrotreatment activity of the catalyst were studied under 200 degrees C and 3 MPa hydrogen pressure using acetic acid as the model compound. The XRD results indicate that the addition of Mo promoter is beneficial to the uniformity of nickel species on the catalyst and decreases the Interaction between nickel species and the support Which results in the decrease the of NiAl2O4 spinel formation. The addition of Mo promoter also decreases the reducing temperature of the catalyst. After the catalyst of 0.06 MoNi/gamma-Al2O3 being reduced Under the atmosphere of H-2/N-2(5/95, V/V), nickel oxide was reduced to Ni-0. The reaction was promoted obviously upon the addition of the MoNi/gamma-Al2O3 catalyst reduced at 600 degrees C. The Mo-modified Ni/gamma-Al2O3 catalyst reduced at 600 degrees C displayed the highest activity during the reaction, the conversion of acetic acid reached the highest point of 33.2%. The products included ethyl acetate and water.

酚酞型聚芳醚砜共聚物与共混物－(PP/BiS-T) PES共聚物和(PPS/PES-C)、(PPO/PES-C)共混物的合成、结构与性能研究

本工作旨在通过共聚、共混技术制备酚酞型聚芳醚砜共聚物(PP/BiS-T) PES和共混物(PPS/PES-C)、PPO/PES-C，以便改善酚酞型聚芳醚砜（PES－C）的加工性能（特别是注射加工性能）和耐溶剂性能。通过研究共聚物和共混物的微观结构，聚集态结构与性能的关系，探索改善酚酞型聚芳醚硕性能的有效途径第一部分：(PP/BiS-T) PES共聚物的合成、结构与性能(PP/BiS-T) PES共聚物是以4，4'二氯二苯砜（DCDPS）、酚酞（PP）和4，4'－二羟基二苯硫醚(BiS-T)为单体，采用固体无水K_2CO_3/NMP/TMSO_2 混合溶剂反应体系合成的。共聚反应规律研究表明：在NMP/TMSO_2混合溶剂中，共聚反应可以顺利进行，避免了交联反应的发生，并成功地合成了高分子量的(PP/BiS-T) PES共聚物。DSC分析结果表明(PP/BiS-T) PES系列属于无定形的均相共聚物体系，每一组成比例对应的共聚物只具有一个玻璃化转变温度。且随组成比例的改变呈线性变化，TBA分析结果与DSC基本一致，并证实了(PP/BiS-T) PES属于均相共聚物体系，而不是均聚物的共混物。TG分析表明：共聚物具有良好的耐热氧化稳定性BiS-T链节在分子链中起到了提高自身抗氧性的作用。1R光谱对共聚物的结构进行表征。~(13)C-NMR分析确认共聚物多属于无规共聚物。动态力学试验表明共聚物(PP/BiS-T) PES以及PES－C，在－100 ℃附近和0－100 ℃，存在着次级松驰与转变，并发现水分子的存在对这种转变（次级松驰）有一定的影响。共聚物的熔融流动性试验和溶解性试验表明共聚物(PP/BiS-T) PES具有稍好于PES－C的熔融流动性；溶解性与PES－C类似。力学试验说明共聚物属于强而硬类型的聚合物。第二部分：PPS/PES－C共混物的制备、聚集态结构与性能PPS/PES－C共混物是以联苯/二苯硕混合物为溶剂，采用溶液沉析方法制备的，DSC、WAXD，SEM和1R分析手段对共混物的聚集态结构和微观结构进行了表征。DSC分析认为共混物属于多相体系，PPS的结晶性随着PES－C含量增加而降低。DSC和SEM观察结果表明：相转变发生在PPS占40％左右。PPS占25％时，DSC曲线呈现出界面相玻璃化转变温度。共混物具有良好的耐热氧化稳定性和耐热分解稳定性。微晶大小计算结果：PES－C存在导致了PPS微晶大小降低。WAXD曲线表明PPS占50％，共混物中的PPS具有较好的结晶性。SEM观察发现：随着PES－C含量增加，PES－C由分散相（PES－C50％）变为连续相（PES－C70％）。PPS占50％或低于50％时，共混物体系不仅发生了微观相分离，而且发生了宏观相分离。M.I.指数表明共混物中PPS为连续相时，共混物具有良好的熔融流动性。溶解性试验结果：共混物具有较好的耐溶剂性。第三部分：PPO/PES－C共混物的合成、结构与性能 PPO/PES－C共混物系用溶液－涂膜法，以氯彷为溶剂制备的。讨论了由同一共混物溶液浓度下制备的共混物的互溶性随组成的改变而变化。DSC分析结果：PPO/PES－C属于部分相溶性体系。利用Fox方程推导式计算结果表明PPO在富PES－C相中具有良好的分散性；而PES－C在富PPO相中的分散性较差。共混物(PPO/PES－C)试样经丙酮浸泡后，PPO（>50％）发生了溶剂诱导结晶现象，同时丙酮促使共混物发生完全相分离。结晶溶化热显示共混物中少量的PES－C存在有利于PPO的溶剂诱导结晶。TG分析表明共混物具有良好的耐热分解稳定性和耐热氧化分解稳定性。偏光显微镜下观察到PPO球晶的存在。SEM和FT－1R分别对共混物的形态结构和微观结构进行了表征。WAXD试验证实了丙酮处理的(PPO/PES－C)（70/30），（90/10）共混物中PPO的结晶性。溶解性试验表明：PPO掺入有助于 PES－C的耐溶剂性提高。

TUNNELING ESCAPE TIME OF ELECTRONS FROM A QUANTUM-WELL WITH GAMMA-X MIXING EFFECT

By using the envelope function method we calculated the tunneling escape time of electrons from a quantum well. We adopted a simplified interface matrix to describe the GAMMA-X mixing effect, and employed a wave packet method to determine the tunneling escape time. When the GAMMA state in the well was in resonance with the X state in the barrier, the escape time reduced remarkably. However, it was possible that the wave functions in two different channels, i.e., GAMMA-GAMMA-GAMMA and GAMMA-X-GAMMA, could interfere destructively, leading the escape time greater than that of pure GAMMA-GAMMA-GAMMA tunneling.

NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES

We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.

INTERVALLEY-GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE AND SI SEMICONDUCTORS BY AB-INITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA - X deformation potential constants (IVDP's) have been calculated by first principle pseudopotential method for the III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. As a prototype crystal we have also carried out calculations on Si. When comparing the calculated IVDP's of LA phonon for GaP, InP and InAs and LO phonon for AlAs, AlSb, GaAs, GaSb and InSb with a previous calculation by EPM in rigid approximation, good agreements are found. However, our ab initio pseudopotential results of LA phonon for AlAs, AlSb, GaAs, GaSb and InSb and LO phonon for GaP, InP and InAs are about one order of magnitude smaller than those obtained by EPM calculations, which indicate that the electron redistributions upon the phonon deformations may be important in affecting GAMMA - X intervalley shatterings for these phonon modes when the anions are being displaced. In our calculations the phonon modes of LA and LO at X point have been evaluated in frozen phonon approximation. We have obtained, at the same time, the LAX and LOX phonon frequencies for these materials from total energy calculations. The calculated phonon frequencies agree very well with experimental values for these semiconductors.

INTERVALLEY GAMMA-CHI DEFORMATION POTENTIALS IN III-V ZINCBLENDE SEMICONDUCTORS BY ABINITIO PSEUDOPOTENTIAL CALCULATIONS

Intervalley GAMMA-X deformation-potential constants (IVDP's) have been calculated by use of a first-principles pseudopotential method for the III-V zinc-blende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, and InSb. When the calculated IVDP's of LA phonons for GaP, InP, and InAs and of LO phonons for AlAs, AlSb, GaAs, GaSb, and InSb are compared with results of a previous calculation that used the empirical pseudopotential method (EPM) and a rigid-ion approximation, good agreement is found. However, our ab initio pseudopotential results on IVDP's of LA phonons for AlAs, AlSb, GaAs, GaSb, and InSb and of LO phonons for GaP, InP, and InAs are about one order of magnitude smaller than those obtained by use of EPM calculations, indicating that the electron redistribution accompanying crystal-lattice deformation has a significant effect on GAMMA-X intervalley scattering for these phonon modes when the anions are being displaced. In our calculations the LA- and LO-phonon modes at the X point have been evaluated in the frozen-phonon approximation. We have also obtained the LAX- and LOX-phonon frequencies for these materials from total-energy calculations, which agree very well with experimental values for these semiconductors. We have also calculated GAMMA-X hole-phonon scattering matrix elements for the top valence bands in these nine semiconductors, from which the GAMMA-X IVDP's of the top valence bands for the longitudinal phonons and transverse phonons are evaluated, respectively.

Evidence of Gamma-X sequential resonant tunneling in GaAs/AlAs superlattices

We have studied the sequential resonant tunneling of doped weakly coupled GaAs/AlAs superlattices under hydrostatic pressure up to 4.5 kbar. The pressure coefficient obtained from the experiment, 15.3 meV/kbar, provides a strong evidence for the formation of the electric field domain due to Gamma-X sequential resonant tunneling, At the same time, we have observed the transition between two kinds of sequential resonant tunneling processes within the pressure range from 0 to 4.5 kbar, where the transition pressure between Gamma-Gamma and Gamma-X sequential resonant tunneling is P-t similar to 1.6 kbar. For P < P-t, the electric field domain is formed by Gamma-Gamma sequential resonant tunneling, while for P > P-t, the electric field domain is preferably formed by Gamma-X sequential resonant tunneling. (C) 1996 American Institute of Physics.

HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS

We have measured low-temperature photoluminescence spectra of InAs quantum dots embedded in a GaAs crystalline matrix under hydrostatic pressures up to 7 GPa. Below 4.2 GPa the spectra are dominated by the Gamma-like electron-heavy hole (HH) exciton transition in the InAs dots. Above 4.2 GPa the spectra show two X-related luminescence bands which are attributed to the indirect type-I transition between X(Xy) and HH states of the dots and the type-II transition from X states in GaAs to InAs HH states, respectively. In the Gamma-X crossover regime we find evidence for a pronounced mixing interaction between InAs Gamma-like and GaAs X-like states. The corresponding interaction potential is estimated to be 9 meV.