Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films

Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.

An Improvement on 2× 2 Silicon-on-Insulator Mach-Zehnder Thermo-Optical Switch

An improved 2 ×2 silicon-on-insulator Mach-Zehnder thermo-optical switch is designed and fabricated, which is based on strongly guided multimode interference couplers and single- mode phase-shifting arms. The multimode interference couplers and input/output waveguides are deeply etched to improve coupler performances and coupler-waveguide coupling efficiencies. However, shallow etching is used in the phase-shifting arms to guarantee single-mode property. The strongly guided coupler presents an attractive uniformity about 0. 03 dB and a low propagation loss of -0.6 dB. The 2× 2 switch shows an insertion loss as low as -6.8 dB, where the fiber-waveguide coupling loss of -4.3 dB is included, and the response-time is measured as short as 6.8 μs, which are much better than our previous results.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

Microemulsion-mediated solvothermal synthesis and photoluminescent property of 3D flowerlike MnWO4 micro/nanocomposite structure

Novel three-dimensional (3D) flowerlike MnWO4 micro/nanocomposite structure has been successfully synthesized for the first time. The synthesized products were systematically studied by X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) and photoluminescence (PL) spectra. It is found that both reaction time and temperature have significant effects on the morphology of the products.

Chemical bond characteristics, thermal expansion property and compressibility of AR(2)O(4) (A = Ca, Sr, Ba; R = rare earths)

Theoretical researches were performed on the CaFe2O4-type binary rare earth oxides AR(2)O(4) (A = Ca, Sr, Ba; R = rare earths) by using chemical bond theory of dielectric description. The chemical bond properties of these crystals were explored, and then the thermal expansion property and compressibility were studied. The theoretical values of linear thermal expansion coefficient (LTEC) and bulk modulus were presented. The calculations revealed that the LTECs and the bulk moduli do have linear relationship with the ionic radii of the rare earths. In the cases of Sc and Y, both the LTEC and bulk modulus values are larger than the lanthanide series. We attribute this to the difference in the electronic configuration between Sc (Y) and lanthanide series. For SrY2O4 and BaY2O4 crystals, the theoretical values of LTEC and bulk modulus agree well with experimental ones.

Improved optical photoluminescence by charge compensation in the phosphor system CaMoO4: Eu3+

It has been found that charge compensated CaMoO4:Eu3+ phosphors show greatly enhanced red emission under 393 and 467 nm-excitation, compared with CaMoO4:Eu3+ without charge compensation. Two approaches to charge compensation, (a) 2Ca(2+) -> EU3+ + M+, where M+ is a monovalent cation like Li+, Na+ and K+ acting as a charge compensator; (b) 3Ca(2+) -> 2EU(3+) + vacancy, are investigated. The influence of sintering temperature and Eu3+ concentration on the luminescent property of phosphor samples is also discussed.

Calculation of nonlinear optical properties of KNdP4O12

The second-order nonlinear optical (NLO) tensor coefficients of KNdP4O12 (KNP) are theoretically predicted from its crystal structural data, by using the chemical bond theory of complex crystals and the modified bond charge model. Linear and nonlinear optical contributions of each type of bond to the total linearity (chi) and nonlinearity (d(ij)) of KNP are quantitatively determined. The structure-property relationship of KNP is systematically investigated, from the chemical bond viewpoint. Based on the discussion of its structural modifications, we point out that NLO properties of I(NP can be improved effectively using the doping method. Theoretical predictions show KNP to be a promising: self-frequency-doubling laser material.

Structure-property relationships in Li1-xHxIO3 type complex crystals

Chemical bond parameters and the linear and nonlinear optical (NLO) properties of all constituent chemical bonds in Li1-xHxIOx [x (the amount of hydrogen) = 0.0, 0.28, and 0.34] (LHIO) type complex crystals have been investigated from the chemical bond viewpoint, At the same time, the relationship between the crystal structure and its optical properties has been obtained, based on the calculated results of LiIO3, Li0.72H0.28IO3, and Li0.66H0.34IO3. The nonlinear optical properties of LHIO single crystals are found to be particularly sensitive to the H+ impurity concentration. (C) 1998 Academic Press.

A ZINDO-SOS study on the nonlinear second-order optical properties of substituted silanes series molecules

On the basis of ZINDO methods,according to the sum - over - states( SOS) expression, we divise the program for the calculation of nonlinear second - order optical susceptibilities beta(ijk) and study how the different substituents on the phenyl ring attached to the atom silicon influence or; the nonlinear second - order optical properties for substituted silanes series molecules. The property of (CH3)(3)Si is Studied particularly. The effect of length of silica chains on the calculated beta values is studied too. The regularity summarized from calculated results has been explained micromechanically.