Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN

Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595 cm(-1) modes are attributed to the disorder-activated Raman scattering, whereas the 670 cm(-1) peak is assigned to nitrogen-vacancy-related defect scattering. One additional peak at 360 cm(-1) arises after Er+O coimplantation. This Raman peak is attributed to the O-implantation-induced defect complex. The appearance of the 360 cm(-1) mode results in the decrease of the Er3+ -related infrared PL intensity for the GaN:Er+O samples. (C) 2004 American Institute of Physics.

Study on Er3+ emission from the erbium-doped hydrogenated amorphous silicon suboxide film

The erbium-doped hydrogenated amorphous silicon suboxide films containing amorphous silicon clusters were prepared. The samples exhibited photoluminescence peaks at around 750 nm and 1.54 mum, which could be assigned to the electron-hole recombination in amorphous silicon clusters and the intra-4f transition in Er3+, respectively. Correlations between the intensities of these two photoluminescence peaks and oxidation and dehydrogenation of the films during annealing were studied. It was found that the oxidation is triggered by dehydrogenation of the films even at low annealing temperatures, which decisively changes the intensities of the two photoluminescence peaks. On the other hand, the increase of Er content in the erbium-doped hydrogenated amorphous silicon suboxide film will enhance Er3+ emission at 1.54 mum, while quench amorphous silicon cluster emission at 750 nm, such a competitive relationship, was also observed in the erbium-doped silicon nanocrystals embedded in SiO2 matrix. Moreover, we found that Er3+ emission is not sensitive to whether silicon clusters are crystalline or amorphous. The amorphous silicon clusters can be as sensitizer on Er3+ emission as that of silicon nanocrystals. (C) 2003 American Institute of Physics.

RBS/channeling study and photoluminscence properties of Er-implanted GaN

The Raman back scattering/channeling technique was used to analyze the damage recovery at different annealing temperatures and to determine the lattice location of the Er-implanted GaN samples. A better damage recovery was observed with increasing annealing temperature below 1000degreesC, but a complete recovery of the implantation damage cannot be achieved. For a sample annealed for at 900degreesC 30 min the Er and Ga angular scans across the <0001> axis was measured indicating that about 76% of Er ions occupies substitutional sites. Moreover, the photoluminscence (PL) properties of Er-implanted GaN thin films have been also studied. The experimental results indicate that those samples annealed at a higher temperature below 1000degreesC had a stronger 1539nm PL intensity. The thermal quenching of PL intensity for samples annealed at 900degreesC measured at temperatures from 15K to 300K is 30%.

Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)

The hydrogenated amorphous SiOx films (a-SiOx:H) with various oxygen contents have been prepared using plasma enhanced chemical vapor deposition technique. The films were implanted with erbium and annealed by rapid thermal annealing. An intense photoluminescence (PL) of Er at 1.54 mum has been observed at 77 K and at room temperature. The PL intensity depends strongly on both the oxygen content of the film and the rapid thermal annealing temperature and reaches its maximum if the ratio of O/Si in the film is approximately equal to 1.0 at 77 K and to 1.76 at room temperature. The microstructure of the film also has strong influences on the PL intensity. The PL intensity at 250 K is slightly more than a half of that at 15 K. It means that the temperature quenching effect of the PL intensity is very weak.

Fabrication and spectroscopic broadening properties for 1.5 mu m amplification of Er3+-doped BaF2 nanoparticles

We show the potential application of Er3+-doped BaF2 nanoparticles prepared from microemulsion technology for 1.5 mu m amplification in telecommunication. Nanoparticles with different sizes of about 8, 10, and 20.5 nm were prepared. The XRD patterns showed the excursion of diffraction peaks. When the particle size is smaller or the diffraction angle is larger, this kind of excursion will be more serious.

Erbium-Complex-Doped Near-Infrared Luminescent and Magnetic

A near-infrared luminescent macroporous material (PL-Macromaterial) and a near-infrared luminescent/magnetic bifunctional macroporous material (MML-Macromaterial) were synthesized by using polystyrene microspheres (PS) and Fe3O4 @polystyrene core-shell nanoparticles (Fe3O4@PS), respectively, as templates. Both the PL-Macromaterial and the M/PL-Macromaterial show the characteristic emission of the Er 3, ion. Moreover, the M/PL-Macromaterial possesses superparamagnetic properties at room temperature.

Highly uniform and monodisperse beta-NaYF4 : Ln(3+) (Ln = Eu, Tb, Yb/Er, and Yb/Tm) hexagonal microprism crystals: Hydrothermal synthesis and luminescent properties

beta-NaYF4:Ln(3+) (Ln = Eu, Tb, Yb/Er, and Yb/Tm) hexagonal microprisms with remarkably uniform morphology and size have been synthesized via a facile hydrothermal route. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectra as well as kinetic decays were used to characterize the samples. It is found that sodium citrate as a shape modifier introduced into the reaction system plays a critical role in the shape evolution of the final products. Furthermore, the shape and size of the products can be further manipulated by adjusting the molar ratio of citrate/RE3+ (RE represents the total amount of Y3+ and the doped rare earth elements such as Eu3+, Tb3+, Yb3+/Er3+, or Yb3+/Tm3+). Under the excitation of 397 nm ultraviolet light, NaYF4:xEu(3+) (x = 1.5, 5%) shows the emission lines of Eu3+ corresponding to D-5(0-3) -> F-7(J) (J = 0-4) transitions from 400 to 700 nm (whole visible spectral region) with different intensity, resulting in yellow and red down-conversion (DC) light emissions, respectively.

Synthesis and photoluminescence properties of erbium-doped BaF2 nanoparticles

Erbium-doped BaF2 nanoparticles were prepared from the microemulsion of cetyl trimethyl ammonium bromide (CTAB), n-butanol, n-octane and water. The X-ray diffraction (XRD) patterns were indexed to a pure BaF2 cubic phase. Transmission electron microscopy (TEM) images showed that BaF2 products were monodispersed with 15-20 nm in size at the dopant concentration of 0.06 mol%. At higher dopant concentration, there was no significant increase in particle size, but more polydispersed. Photoluminescence (PL) properties of the final products were examined. We can observe fluorescence of Er3+ around 1540 nm and with the increase of dopant concentration, the fluorescent intensity increases.

Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity

A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.

加卸载响应比(LURR)、矩／能量加速释放(AM/ER)、态矢量:岩石试件破坏前兆的实验研究

为了验证大地震发生前或者非均匀脆性介质宏观破坏前加卸载响应比和能量加速释放等前兆现象,本文进行了三轴应力(压缩)条件下大尺度岩石破坏声发射实验。实验采用4组岩石试件,并且分为单调加载和循环加载两种方式。实验结果证明了脆性材料宏观破坏前加卸载响应比升高和能量加速释放这两种前兆现象。本文提出了一种描述岩石试件损伤演化的新的物理量——态矢量。

Adsorption of formaldehyde molecule on the intrinsic and Al-doped graphene: a first principle study

To search for a high sensitivity sensor for formaldehyde (H2CO), We investigated the adsorption of H2CO on the intrinsic and Al-doped graphene sheets using density functional theory (DFT) calculations. Compared with the intrinsic graphene, the Al-doped graphene system has high binding energy value and short connecting distance, which are caused by the chemisorption of H2CO molecule. Furthermore, the density of states (DOS) results show that orbital hybridization could be seen between H2CO and Al-doped graphene sheet, while there is no evidence for hybridization between the H2CO molecule and the intrinsic graphene sheet. Therefore, Al-doped graphene is expected to be a novel chemical sensor for H2CO gas. We hope our calculations are useful for the application of graphene in chemical sensor.

Bi-doped BaF2 crystal for broadband near-infrared light source

Bi-doped BaF2 crystal was grown by the temperature gradient technique and its spectral properties were investigated. The absorption, emission and excitation spectra were measured at room temperature. Two broadband emissions centered at 1070 and 1500 nm were observed in Bi-doped BaF2 crystal. This extraordinary luminescence should be ascribed to Bi-related centers at distinct sites. We suggest Bi2+ or Bi+ centers adjacent to F vacancy defects are the origins of the observed NIR emissions. (C) 2009 Optical Society of America

Infrared luminescence properties of bismuth-doped barium silicate glasses

Infrared (IR) luminescence covering 1.1 to similar to 1.6 mu m wavelength region was observed from bismuth-doped barium silicate glasses, excited by a laser diode at 808 nm wavelength region, at room temperature. The peak of the IR luminescence appears at 1325 nm. A full width half-maximum (FWHM) and the lifetime of the fluorescence is more than 200 nm and 400 mu s, respectively. The fluorescence intensity increases with Al2O3 content, but decreases with BaO content. We suggest that the IR luminescence should be ascribed to the low valence state of bismuth Bi2+ or Bi+, and Al3+ ions play an indirect dispersing role for the infrared luminescent centers.

Optical properties of transparent alkali gallium silicate glass-ceramics containing Ni2+-doped beta-Ga2O3 nanocrystals

Broadband near-infrared (IR) luminescence in transparent alkali gallium silicate glass-ceramics containing N2+-doped beta-Ga2O3 nanocrystals was observed. This broadband emission could be attributed to the T-3(2g) (F-3) -> (3)A(2g) (F-3) transition of octahedral Ni2+ ions in glass-ceramics. The full width at half-maximum (FWHM) of the near-IR luminescence and fluorescent lifetime of the glass-ceramic doped with 0.10 mol% NiO were 260 nm and similar to 1220 mu s, respectively. It is expected that transparent Ni2+-doped beta-Ga2O3 glass-ceramics with this broad near-IR emission and long fluorescent lifetime have potential applications as super-broadband optical amplification media.

Broadband infrared luminescence from transparent glass-ceramics containing Ni2+-doped beta-Ga2O3 nanocrystals

Transparent Ni2+-doped beta-Ga2O3 glass-ceramics were synthesized. The nanocrystal phase in the glass-ceramics was identified to be beta-Ga2O3 and its size was about 3.6 nm. It was confirmed from the absorption spectra that the ligand environment of Ni2+ ions changed from the trigonal bi-pyramid fivefold sites in the as-cast glass to the octahedral sites in the glass-ceramics. The broadband infrared emission centering at 1270 nm with full width at half maximum (FWHM) of more than 250 nm was observed. The fluorescence lifetime was about 1.1 mu s at room temperature. The observed infrared emission could be attributed to the T-3 (2g) (F-3) -> (3)A (2g) (F-3) transition of octahedral Ni2+ ions. It is suggested that the Ni2+-doped transparent beta-Ga2O3 glass-ceramics with broad bandwidth and long lifetime have a potential as a broadband amplification medium.