RBa_2Cu_4O_8(R=Dy,Ho,Er,Tm,Yb)和Y_2Ba_4Cu_7O_(14.3)的化学键参数计算

使用复杂晶体上化学键理论计算了 RBa2 Cu4 O8(R=Dy,Ho,Er,Tm ,Yb)和 Y2 Ba4 Cu7O14 .3 的化学键参数 .结果表明 ,Cu O链上的 Cu O键共价性大于它们在 Cu O2 面的共价性 .当金属元素与氧形成五配位时 ,其共价性的数值大于这些元素在六配位时的情形

Bond covalencies in R2BaCuO5 (R = Sm, Gd, Dy, Ho, Y, Er, Tm, Yb, Lu)

Bond covalencies in R2BaCuO5 (R = Sm, Gd, Dy, Ho, Y, Er, Tm, Yb, Lu) were calculated by means of a semiempirical method. This method is the generalization of the dielectric description theory of Phillips-Van Vechten-Levine-Tanaka scheme. The present paper presents the formula concerning the decomposing of complex crystals which are usually anisotropic systems into the sum of binary crystals which are isotropic systems. It can be seen that although the bond covalency is related to many physical quantities, it is mainly influenced by bond valence or bond charge, and a higher bond valence will produce higher bond covalency.

Growth and spectral properties of Er:Gd2SiO5 crystal

Er3+ -doped Gd2SiO5 (Er:GSO) single crystal with dimensions of circle divide 35 x 40 mm(3) has been grown by the Czochralski method. The absorption and fluorescence spectra of the Er:GSO crystal were measured at room temperature. The spectral parameters were calculated based on Judd-Ofelt theory, and the intensity parameters Omega(2), Omega(4) and Omega 6 are obtained to be 6.168 x 10(-20), 1.878 x 10(-20), and 1.255 x 10(-20) cm(2), respectively. The emission cross-section has been calculated by Fuechtbauer-Ladenbury formula. (c) 2007 Elsevier B.V. All rights reserved.

RECRYSTALLIZATION, IMPURITY MIGRATION AND OPTICAL ACTIVATION OF YB-IMPLANTED SILICON INDUCED BY RAPID THERMAL ANNEALING

The rapid thermal annealing temperature dependence of the recrystallization, Yb migration and its optical activation were studied for Yb-implanted silicon. For the annealing regime 800-1000-degrees-C, the Yb segregates both at the crystal/amorphous interface and at the surface, which is different from the usual segregation of Er at the crystal/amorphous interface, and the efficiency of optical activation also increases with annealing temperature. However, the amorphous layer regrows completely and no photoluminescence is observed after the annealing at 1200-degrees-C.

二(2-乙基己基)膦酸萃取Er(Ⅲ)的动力学和机理

H(DEHP)是HEH(EHP)和HDEHP的同系物,它们的结构分别为:HDEHP,(GO)_2PO(OH);HEH(EHP),(GO)(G)PO(OH);H(DEHP),(G)_2PO(OH)。其中G为2-乙基已基。 希土元素萃取分离工艺化学表明,溶剂萃取希土元素对酸度的依赖关系及相邻希土元素间的分离因素值是选择萃取剂时应优先考虑的因素。HDEHP萃取剂对中、重希士元素反萃酸度高,HEH(EHP)是一个优良萃取剂,但对Er,Tm,Yb,Lu的反萃仍需5mol/l的酸。由于H(DEHP)分子中不含酯氧原子,使得它的pK_a值比HDEHP和HEH(EHP)的高。从而,用H(DEHP)萃取希土元素时需要的水相酸度更低,反萃更容易。而且H(DEHP)

加卸载响应比(LURR)、矩／能量加速释放(AM/ER)、态矢量:岩石试件破坏前兆的实验研究

为了验证大地震发生前或者非均匀脆性介质宏观破坏前加卸载响应比和能量加速释放等前兆现象,本文进行了三轴应力(压缩)条件下大尺度岩石破坏声发射实验。实验采用4组岩石试件,并且分为单调加载和循环加载两种方式。实验结果证明了脆性材料宏观破坏前加卸载响应比升高和能量加速释放这两种前兆现象。本文提出了一种描述岩石试件损伤演化的新的物理量——态矢量。

Comparison of laser performances of 5at.% Yb : Gd2xY2(1-x)SiO5 crystals between different cutting directions

We investigate the laser actions of 5at.% Yb:Gd2xY2(1-x)SiO5 (Yb:GYSO; x = 0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9 W. In contrast, the sample cut parallel reaches only 1.65 W at 1044 nm with a slope elLiciency of 33.76% with absorbed pump power of 7.99 W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68 nm to 1084.82 nm.

激光二极管抽运的国产Yb:YAG陶瓷激光器

研究了国产Yb:YAG陶瓷的激光输出特性。激光器采用激光二极管(LD)纵向同轴抽运Yb:YAG陶瓷样品,样品的掺杂原子数分数为1%,一端面镀940 nm和1030 nm双增透膜,另一端面镀1030 nm增透膜,激光器在1031 nm处获得了近红外激光输出。实验中分别测试了Yb:YAG陶瓷在不同输出透射率(T=4%,8%,10%)条件下的激光输出特性。整个实验过程中,激光器维持基横模运转。当输出透射率为10%,吸收的抽运功率为9 W时,激光器获得最大的激光输出功率为1.63 W,相应的斜率效率为23.2%。

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

Tunable and efficient diode-pumped Yb3+: GYSO laser

Effective diode-pumped cw tunable laser action of a new alloyed crystal Yb:Gd(2(1-)x) Y2xSiO5 (Yb:GYSO, x = 0.5) is demonstrated for the first time. The alloyed crystal retains excellent laser properties of Gd2SiO5 (GSO), as well as the favorable growth properties and the desirable physical of Y2SiO5 (YSO). With a 5-at.% Yb: GYSO sample, we achieved 2.44 W output power at 1081.5 nm and a slope efficiency of 57%. And its laser wavelength could be tuned from 1030nm to 1089 nm. (c) 2006 Optical Society of America.

Gamma-ray induced color centers in Yb : YAG crystals grown by Czochralski method

20 at.% Yb:YAG single crystals have been grown by the CZ method and gamma-ray irradiation induced color centers and valence change of Fe3+ and Yb3+ ions in Yb:YAG have been studied. One significant 255 nm absorption band was observed in as-grown crystals and was attributed to Fe3+ ions. Two additional absorption (AA) bands located at 255 nm and 345 nm, respectively, were produced after gamma irradiation. The changes in the AA spectra after gamma irradiation and air annealing are mainly related to the charge exchange of the Fe3+, Fe2+, oxygen vacancies and F-type color centers. Analysis shows that the broad AA band is associated with Fe2+ ions and F-type color centers. The transition Yb3+ Yb2+ takes place as an effect of recharging of one of the Yb3+ ions from a pair in the process of gamma irradiation. (C) 2006 Elsevier Ltd. All rights reserved.