Analysis of chirp characteristics of DFB lasers and integrated laser-modulators

A new method of analyzing the chirp characteristics of directly modulated lasers and integrated laser-modulators is presented in this paper. Phase-circuit has been introduced into the circuit model of distributed feedback (DFB) lasers in the analysis. Therefore, the chirp characteristics of the device can be obtained by simulating the modified circuit model. The simulation results agree well with the published data. Furthermore, this modified model is combined with the circuit model of electroabsorption (EA) modulators to simulate the chirp characteristics of the monolithic integration of a DFB laser and an EA modulator. The simulation is focused on the dependence of the frequency chirp of the integrated device on the isolation resistance between laser and modulator. Much lower chirp can be seen in the integrated lightwave source compared to the directly modulated laser.

Temperature dependence of the Raman-active modes in the nonpolar a-plane GaN film

Temperature dependences of the polarized Raman scattering spectra in the backscattering configuration of the nonpolar a-plane (or [11 (2) over bar0]-oriented) GaN thin film are analyzed in the range from 100 to 570 K. The nonpolar a-plane GaN film is grown on an r-plane [or (1 (1) over bar 02)-oriented] sapphire substrate by metal organic chemical vapor deposition. The spectral features of the Raman shifts, intensities, and linewidths of the active phonons modes A(1)(TO), E-1(TO), and E-2(high) are significantly revealed, and corresponding temperature coefficients are well deduced by the empirical relationships. With increasing the measurement temperature the Raman frequencies are substantially redshifted and the linewidths gradually broaden. The compressive-strain-free temperature for the nonpolar a-plane GaN film is found to be at about 400 K. Our studies will lead to a better understanding of the fundamental physical characteristics of the nonpolar GaN film. (c) 2007 American Institute of Physics.

Characteristics of triangle and square InP/InGaAsP microlasers

Directional emission triangle and square InGaAsP/InP lasers have been fabricated by standard photolithography, inductively coupled plasma etching technique combined with wet chemical etching process. In this article, the characteristics of the microcavity lasers are presented. For an equilateral triangle microcavity laser with the side length of 30 mu m, we got the laser spectra fitted very well with the mode wavelength formulate LIP to the 8(th) transverse mode at room temperature. But the laser spectra are usually more complex than the formulae for the lasers, especially for the lasers with a smaller side length. For a square microcavity laser with side length of 20 mu m, we observed the mode competition between the Fabry-Perot (FP) modes and Whispering-Gallery (WG) modes at 200K. The output spectra below the threshold have the mode interval of FP modes with a large mode interval, and the laser spectra agree very well with the WG modes, which have mode interval less than the FP modes. The output spectra are dominated by the FP modes below the threshold, because the FP modes have a higher output coupling efficiency than the WG modes.

THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS

The dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usally ascribed to the existence of EL2 states and their photodriven metastable states. To understand the conductivity quenching, we have introduced nonlinear terms describing the recombination of the nonequilibrium free electrons and holes into the calculation. Though some photoquenching such as photocapacitance, infrared absorption, and electron-paramagnetic-resonance quenching can be explained qualitatively by only considering the internal transfer between the EL2 state and its metastability, it is essential to take the recombination into consideration for a clear understanding of the photoquenching process. The numerical results and approximate analytical approach are presented in this paper for the first time to our knowledge. The calculation gives quite a reasonable explanation for n-type semiconducting GaAs to have infrared absorption quenching while lacking photoconductance quenching. Also, the calculation results have allowed us to interpret the enhanced photoconductance phenomenon following the conductance quenching in typical semi-insulating GaAs and have shown the expected thermal recovery temperature of about 120 K. The numerical results are in agreement with the reported experiments and have diminished some ambiguities in previous works.

Effect of Mesa Size on Thermal Characteristics of Vertical-cavity Surface-emitting Lasers

The effect of mesa size on the thermal characteristics of etched mesa vertical-cavity surfaceemitting lasers(VCSELs) is studied. The numerical results show that the mesa size of the top mirror strongly influences the temperature distribution inside the etched mesa VCSEL. Under a certain driving voltage, with decreasing mesa size, the location of the maximal temperature moves towards the p-contact metal, the temperature in the core region of the active layer rises greatly, and the thermal characteristics of the etched mesa VCSELs will deteriorate.

High Temperature Characteristics of 3C-SiC/Si Heterojunction Diodes Grown by LPCVD

The high temperature (300～480K) characteristics of the n-3C-SiC/p-Si heterojunction diodes (HJD) fabricated by low-pressure chemical vapor deposition on Si (100) substrates are investigated.The obtained diode with best rectifying properties has 1.8×104 of ratio at room temperature,and slightly rectifying characteristics with 3.1 of rectification ratio is measured at 480K of an ambient temperature .220V of reverse breakdown voltage is acquired at 300K.Capacitance-voltage characteristics show that the abrupt junction model is applicable to the SiC/Si HJD structure and the built-in voltage is 0.75V.An ingenious equation is employed to perfectly simulate and explain the forward current density-voltage data measured at various temperatures.The 3C-SiC/Si HJD represents a promising approach for the fabrication of high quality heterojunction devices such as SiC-emitter heterojunction bipolar transistors.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Crystallographic and electrochemical characteristics of TiZrNiCu quasicrystal ball-milled with La0.9Zr0.1Ni4.5Al0.5 alloy

Icosahedral quasicrystalline Ti45Zr35Ni17Cu3 alloy was ball-milled with 30 mass% La0.9Zr0.1Ni4.5Al0.5 alloy (LaNi5 phase), the effect of the milling time on crystallographic and electrochemical characteristics of the alloy powder was investigated. The amount of amorphous phase increased with increasing milling time from 60 to 360 min, and the LaNi5 phase cannot be observed when milling time was 240 min or more. The maximum discharge capacity and high-rate dischargeability of milled alloy electrodes were obviously higher than those of the alloy electrode before milling. The cycling capacity retention rate after 40 cycles increased from 52.8% (t = 60 min) to 62.9% (t = 360 min).

Crystallographic and electrochemical characteristics of La0.7Mg0.3Ni3.5-x (Al0.5Mo0.5)(x) (x=0-0.8) hydrogen storage alloys

The crystal structure, hydrogen storage property and electrochemical characteristics of the La0.7Mg0.3Ni3.5-x(Al0.5Mo0.5), (x=0-0.8) alloys have been investigated systematically. It can be found that with X-ray powder diffraction and Rietveld analysis the alloys are of multiphase alloy and consisted of impurity LaNi phase and two main crystallographic phases, namely the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase, and the lattice parameter and the cell volume of both the La(La, Mg)(2)Ni-9 phase and the LaNi5 phase increases with increasing A] and Mo content in the alloys. The P-C isotherms curves indicate that the hydrogen storage capacity of the alloy first increases and then decreases with increasing x, and the equilibrium pressure decreases with increasing x. The electrochemical measurements show that the maximum discharge capacity first increases from 354.2 (v = 0) to 397.6 mAh g(-1) (x = 0.6) and then decreases to 370.4 mAh g(-1) (x= 0.8). The high-rate dischargeability of the alloy electrode increases lineally from 55.7% (x=0) to 73.8% (x=0.8) at the discharge current density of 1200 mA g(-1). Moreover, the exchange current density of the alloy electrodes also increases monotonously with increasing x.

Effects of the morphologies and structures of light-emitting layers on the performance of organic electroluminescent devices

Organic electroluminescent devices with a structure of ITO/ploy (9-vinylcarbazole)/tris (8-hydroxyquinoline) aluminum (Alq3)/Mg:Ag are fabricated at different substrate temperatures (77, 298, and 438 K) during Alq3 deposition. It is found that the surface morphologies of Alq3 thin films greatly affect the I-V characteristics of the devices by the contact area between metal cathode and light-emitting layer. There is an increase in the luminous efficiency of the devices in the order 77 K < 298 K < 438 K. We attribute this trend to different structures of Alq3 thin films. (C) 2001 American Institute of Physics.

Tectonic geomorphology of the Ryukyu Trench-Arc-Backarc System: geological-geophysical exploration and mapping

OKINAWA TROUGH; BASIN

Characterization of the life history of Bangia fuscopurpurea (Bangiaceae, Rhodophyta) in connection with its cultivation in China

Bangia fuscopurpurea (Rhodophyta) was cultivated in Putian (Fujian province, China). The characteristics of the life history concerned with cultivation were investigated and the cultivation procedure was presented. The gametophytic phase (thallus) and the sporophytic phase (conchocelis) occurred alternately in the life history of B. fuscopurpurea. Young thalli produced archeospores, and the number depended on the environmental factors. Temperature affected the number of archeospore release and percent of germination, and photo flux density (PFD) mainly affected the time of spore release and germination. Thalli matured from December to February and developed into the conchocelis phase through sexual reproduction. The conchocelis grown in shells had three developmental stages: vegetative conchocelis, conchosporangiall formation and conchospore formation. Pit-connections were present in the first 2 stages but absent after conchospore formation. Vegetative conchocelis and conchosporangial. branches can transform into each other. However, conchospores only developed into the gametophytic phase. Cultivation of B. fuscopurpurea was based on characterization of the life history, consisting of 3 steps: zygotospores collection, indoor cultivation of conchocelis and outdoor cultivation of thalli. Young thalli that developed from conchospores produced numerous archeospores before December. Over 90% of the crop was from the development of archeospores. The results indicated that conchosporelings were a good source of archeospores, and the development of the large quantity of archeospores acted as a more prevailing means to increase the population size. (C) 2008 Elsevier B.V. All rights reserved.

Diversity and spatial distribution of amoA-encoding archaea in the deep-sea sediments of the tropical West Pacific Continental Margin

The ecological characteristics of the deep-sea amoA-encoding archaea (AEA) are largely unsolved. Our aim was to study the diversity, structure and distribution of the AEA community in the sediments of the tropical West Pacific Continental Margin, to develop a general view of the AEA biogeography in the deep-sea extreme environment. Archaeal amoA clone libraries were constructed. Diverse and novel amoA sequences were identified, with the Bohol Sea, Bashi Strait and Sibuyan Sea harbouring the highest and the Bicol Shelf the lowest AEA diversity. Phylogenetic and statistical analyses illustrate a heterogeneous distribution of the AEA community, probably caused by the differential distribution of the terrestrial or estuarine AEA in the various sampling sites. The deep-sea sedimentary environments potentially harbour diverse and novel AEA in the tropical West Pacific Continental Margin. The stations in the Philippine inland seas (including station 3043) may represent AEA assemblages with various terrestrial influences and the stations connected directly to the open Philippine Sea may represent marine environment-dominant AEA assemblages. Our study indicates the potential importance of geological and climatic events in the transport of terrestrial micro-organisms to the deep-sea sedimentary environments, almost totally neglected previously.

Geochemical properties of the variolitic andesite from Susong in the Dabie orogenic belt, China

The variolitic andesite from the Susong County in the Dabie Mountains implies that it was erupted in water. The mineralogy of the varioles is primarily radiate plagioclase (albite sind oligoclase), with little pyroxene, hornblende and quartz (derived from alteration). The pyroxene, hornblende and quartz are in the interstices between plagiocalse. The matrix consists of glass, hornblende, chlorite, epidote and zoisite. It is clearly subjected an extensive alteration. The andesite has an uncommon chemical composition. The SiO2 content is about 56.8%, TiO2 = 0.9%, MgO = 6.4%, Fe2O3 (tot) = 6.7%similar to 7.6%, 100Mg/(Mg + Fe) = 64.1 similar to 66.2. Mg-# is significantly high. The andesite has high abundances of large-lithophile trace elements (e.g. K, Ba. Sr, LREE), e.g. La/Nb = 5.56 similar to 6.07, low abundances of high-strength-field elements (HFSE e.g. Ta, Nb, P, Ti), particularly Ta and Nb strongly depleted. These are consistent with the characteristics of subduction-related magmas. In the spider diagram of trace elements, from Ce to right hand, the abundances of elements decrease quickly, showing a character of the continental margins. There has a strong punishment of light-rare-earth elements, with a significant diffraction of REEs (the mean value of (La/Yb)(N) is 32.84). No Eu anomaly, but there are anomaly high (La/Yb)(N) = 28.63 similar to 36.74, (La/Y)(N) = 70.33 similar to 82.4. The elements Y and Yb are depleted greatly, Y<20 g/g, Y-N = 2.74 similar to 2.84, Yb-N = 2.18 similar to 2.35. From the La-(La/Sm) diagram, the andesite is derived from partial melting. But the epsilone value of Nd is - 18.7 similar to -19.2, so that the material source may be the mantle materials affected by the crustal materials. The Nd model age is 1.9 Ga indicating that the variolitic basaltic andesite was resulted from the mantle wedge of North China block, which had the Nd model age of 2.5Ga, when the Yangze block which had the Nd model age of 1.7Ga subducted beneath it. So the variolitic andesite has characteristics of the island-are volconic rocks oil a continental basement in the vicinity of the destructive continental margin.

Hydrogeochemistry of formation water in relation to overpressures and fluid flow in the Qikou Depression of the Bohai bay basin, China

The Qikou Depression is the largest hydrocarbon bearing depression in the western part of the Bohai bay basin, dominated by fan delta and lacustrine strata with volcanic and volcaniclastic rocks. In this study, the formation pressures and hydrochemistry of the formation water in the Qikou depression are investigated. It is found that a significant overpressure occurs in the Dongying (Ed) Formation and the first member (Est), the second member (Es2), the third member (Es3) of the Shahejie Formation. The pressure coefficients commonly range from 1.2 to 1.6 with the highest pressure coefficient being 1.7. The analysis of hydrochemistry data shows that the whole depression is dominated by NaHCO3 water type. The concentration of total dissolved solid (TDS) ranges from 2.13 to 53.16 g/L and shows a distinct vertical variation of salinity and ion ratios. High salinity water (TDS> 10 g/L) occurs below a depth of 2500 m, which coincides with the presence of the overpressured system. However, the increasing trend of TDS is diminished below 3500 m because the generation of organic acids in Qikou Depression is inhibited in the presence of overpressure. The analysis of the relationship among different ions indicates that the present-day characteristics of the formation water result from the albitization of feldspar and the dissolution of sodium-rich silicate minerals and halite in the different hydrochemical and pressure systems. (C) 2009 Elsevier B.V. All rights reserved.