Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Focal shift in focused radially polarized ultrashort pulsed laser beams

Beginning with a beam coherence polarization (BCP) matrix, we obtain an analytical intensity expression for radially polarized ultrashort pulsed laser beams that pass through an apertureless aplanatic lens. We also investigate the intensity distribution of radially polarized beams in the vicinity of the focus. The focal shift of these beams is studied in detail. The focal shift depends strongly on Z(F) that coincides with pi times the Fresnel number. (c) 2007 Optical Society of America.

Spectral anomalies of focused hollow Gaussian beams at the geometrical focal plane

On the basis of diffraction integral and the expansion of the hard-aperture function into a finite series of complex Gaussian functions, an approximate expression for spatially fully coherent polychromatic hollow Gaussian beams passing through aperture lens is obtained. Detailed numerical results indicate that remarkable spectral changes always occurs near the points where the field amplitude has zero value. The effects of truncation parameter, Fresnel number and the beam order on spectral shifts and spectral switches are investigated numerically. (C) 2008 Elsevier B.V. All rights reserved.

Propagation of flat-topped beams

The propagation of flat-topped beams passing through paraxial ABCD optical system is investigated based on the propagation formulas of Gaussian beam. The focal shift of focused coherent flat-topped beam is also studied in detail. Analytical expressions of the M-2 factor and the far-field intensity distribution for flat-topped beams are derived on the basis of second-order moments. (C) 2007 Elsevier Ltd. All rights reserved.

Analytical vectorial structure of hollow Gaussian beams in the far field

The analytical vectorial structure of HGB is investigated in the far field based on the vector plane wave spectrum and the method of stationary phase. The energy flux distributions of HGB in the far-field, which is composed of TE term and TM term, are demonstrated. The physics pictures of HGB is illustrated from the vectorial structure, which is important to understand the theoretical aspects of both scalar and vector HGB propagation. (c) 2008 Optical Society of America.

Formation of arrayed holes on metal foil and metal film by multibeam interfering femtosecond laser beams

We report on an optical interference method to fabricate arrayed holes on metal nickel foil and aluminum film deposited on glass substrate by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed that arrayed holes of micrometre-order were fabricated on both metal foil and metal film. The present technique allows one-step, large-area, micrometric processing of metal materials for potential industrial applications.

Optical transfer of periodic microstructures by interfering femtosecond laser beams

We report on an optical interference method for transferring periodic microstructures of metal film from a supporting substrate to a receiving substrate by means of five-beam interference of femtosecond laser pulses. Scanning electron microscopy and optical microscopy revealed microstructures with micrometer-order were transferred to the receiving substrate. In the meanwhile, a negative copy of the transferred structures was induced in the metal film on the supporting substrate. The diffraction characteristics of the transferred structures were also evaluated. The present technique allows one-step realization of functional optoelectronic devices. (C) 2005 Optical Society of America.

Far-field intensity distribution and M-2 factor of hollow Gaussian beams

The far-field intensity distribution of hollow Gaussian beams was investigated based on scalar diffraction theory. An analytical expression of the M-2 factor of the beams was derived on the basis of the second-order moments. Moreover, numerical examples to illustrate our analytical results are given. (c) 2005 Optical Society of America.