Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy

The structural properties of GaAs grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) were studied. The excess arsenic atoms in LTMBE GaAs exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and cause an increase in the lattice parameter of LTMBE GaAs. Annealing at above 300 degrees C, the arsenic interstitial couples decomposed, and As precipitates formed, resulting in a decrease in the lattice parameter.

Tolerance analysis for incident angle of volume phase holographic grating used in optical channel performance monitor

Transmission Volume Phase Holographic Grating (VPHG) is adopted as spectral element in the real-time Optical Channel Performance Monitor (OCPM), which is in dire need in the Dense Wavelength -division-multiplexing(DATDM) system. And the tolerance of incident angle, which can be fully determined by two angles: 6 and (p, is finally inferred in this paper. Commonly, the default setting is that the incident plane is perpendicular to the fringes when the incident angle is mentioned. Now the situation out of the vertical is discussed. By combining the theoretic analysis of VPHG with its use in OCPM and changing 6 and (0 precisely in the computation and experiment, the two physical quantities which can fully specify the performance of VPHG the diffraction efficiency and the resolution, are analyzed. The results show that the diffraction efficiency varies greatly with the change of 6 or (p. But from the view of the whole C-band, only the peak diffraction efficiency drifts to another wavelength. As for the resolution, it deteriorates more rapidly than diffraction efficiency with the change of (p, while more slowly with the change of theta. Only if \phi\less than or equal to+/-1degrees and alpha(B) -0.5 less than or equal to theta less than or equal to alpha(B) + 0.5, the performance of the VPHG would be good enough to be used in OCPM system.

Health effects of arsenic；fluorine；and selenium from indoor burning of Chinese coal

IEECAS SKLLQG

Capillary electrophoretic analysis of arsenic species with indirect laser induced fluorescence detection

The development of a method for determining arsenic species by capillary zone electrophoresis (CZE) with indirect laser-induced fluorescence (LIF) is described in this paper. The buffer pH, the concentration of fluorescein, the nature and the concentration of the background electrolytes (BGEs) were defined. When 2.0 mM NaHCO3 (pH 9.28) with 10(-7) M fluorescein was used as the buffer, arsenite (As(lll), dimethylarsonic acid (DMA), monomethylarsonic acid (MMA), and arsenate (As(V)) were all separated from one another. The limits of detection for the four arsenic species were p p in the range of 0.12-0.54 mg/L. This method was used in the analysis of spiked arsenic species in tap and mineral water to demonstrate its usefulness. The results showed that both the recovery and the reproducibility of the developed method were acceptable.

Determination of arsenic species by capillary zone electrophoresis with large-volume field-amplified stacking injection

Determination of arsenic species by large-volume field amplified stacking injection-capillary zone electrophoresis (LV-FASI-CZE) is reported in this paper. Whole column injection was employed. The optimum buffer pH for the separation of weak acids was discussed. It was found that the optimum buffer to analyze the stacked arsenate (As(V)), monomethylarsonate (MMA), and dimethylarsinate (DMA) was 25 mm phosphate at pH 6.5. However, the optimum buffer to analyze the concentrated arsenite (As(III)) was 20 mm phosphate - 10 mm borate at pH 9.28. The limits of detection of the method developed were 0.026 mg/L for As(III), 0.023 mg/L for As(V), 0.043 mg/L for MMA, and 0.018 mg/L for DMA. An enrichment factor of 34-100 for several arsenic species was obtained. In the end, this method was applied to determine the arsenic concentration in the environmental reference materials to show the usefulness of the method developed.