硅基近红外探测器研究进展

介绍了近年来在硅基近红外探测器方面所取得的最新进展，分析并讨论了各种吸收区材料以及器件结构，并对其发展与应用进行了展望。

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

CSR系统终端中子墙光电倍增管时间型分压系统的应用研究

在兰州重离子加速器冷却储存环将要建设的外靶实验终端上,中子墙探测装置是用来开展放射性束物理以及利用放射性束开展非对称核物质性质研究的一个重要的实验设备。本文对应用于该实验装置上的光电倍增管分压系统进行了研究,给出了适合时间性能探测的时间型分压器设计参数以及测试结果。