Passive mode locking of diode-end-pumped Nd : GdVO4 laser with an In0.25Ga0.75As output coupler

Passive mode locking of a diode-pumped Nd:GdVO4 laser was demonstrated using In0.25Ga0.75As as saturable absorber as well as output coupler. The pulse width was measured to be about 16 ps with a repetition rate of 146 MHz. The average output power was 120 mW with pump power of 6 W. To our knowledge, this is the first demonstration on a passively mode-locked Nd:GdVO4 laser by using an In0.25Ga0.75As output coupler. (C) 2004 Elsevier B.V. All rights reserved.

Growth and characterization of AlGaN/AlN/GaN HEMT structures with a compositionally step-graded AlGaN barrier layer

A new AlGaN/AlN/GaN high electron mobility transistor (HEMT) structure using a compositionally step-graded AlGaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition (MOCVD). The structure demonstrates significant enhancement of two-dimensional electron gas (2DEG) mobility and smooth surface morphology compared with the conventional HEMT structure with high Al composition AlGaN barrier. The high 2DEG mobility of 1806 cm(2)/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5 mu m x 5 mu m are attributed to the improvement of interfacial and crystal quality by employing the step-graded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5 Omega/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/mm and a maximum drain current density of 800 mA/mm.

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition (MOCVD). The room temperature (RT) two-dimensional electron gas (2DEG) mobility was as high as 2215 cm(2)/V s, with a 2DEG concentration of 1.044 x 10(13)cm(-2). The 50 mm HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with a resistance uniformity of 2.02%. The 0.35 Pin gate length HEMT devices based on this material structure, exhibited a maximum drain current density of 1300 mA/mm, a maximum extrinsic transconductance of 314 mS/mm, a current gain cut-off frequency of 28 GHz and a maximum oscillation frequency of 60 GHz. The maximum output power density of 4.10 W/mm was achieved at 8 GHz, with a power gain of 6.13 dB and a power added efficiency (PAE) of 33.6%. (c) 2006 Elsevier B.V. All rights reserved.

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V-Ga defect, at least for cases with annealing temperatures above 300 degreesC, V-Ga is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.

Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy

Optical and electrical properties of ZnSe self-organized quantum dots were investigated using photoluminescence, capacitance-voltage, and deep level transient Fourier spectroscopy techniques. The temperature dependence of photoluminescence was employed to clarify the mechanism of photoluminescence thermal quenching processes in ZnSe quantum dots. A theoretic fit on considering a two-step quenching processes well explained the experimental data. The apparent carrier concentration profile obtained from capacitance-voltage measurements exhibits an accumulation peak at the depth of about 100nm below the sample surface, which is in good agreement with the location of the quantum dot layer. The electronic ground state of ZnSe quantum dots is determined to be about 0.11 eV below the conduction band of ZnS, which is similar to that obtained by simulating the thermal quenching of ZnSe photoluminescence.

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

Hard magnetic properties of Sm3Fe26.7VxN4 and Sm3Fe26.7VxCy

Sm3Fe26.7V2.3N4 nitrides and Sm3Fe26.7V2.3Cy carbides have been synthesized by gas-solid phase reaction. Their hard magnetic properties have been investigated by means of additional ball-milling at room temperature. The saturation magnetization of Sm3Fe26.7V2.3N4 almost decreases linearly with increasing ball-milling time t, but that of Sm3Fe26.7V2.3Cy has no obvious change when the ball-milling time increases from t = 1 to 28 h. As a preliminary result, the maximum remanence B-r of 0.94 and 0.88 T, the coercivity mu(0i)H(C) of 0.75 and 0.25 T, and the maximum energy product (BH) of 108.5 and 39.1 kJ/m(3) for their resin-bonded permanent magnets are achieved, respectively, by ball-milling at 293 K. (C) 1999 Published by Elsevier Science B.V. All rights reserved.

Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity

High-quality InGaAs/InAlAs/InP high-electron-mobility transistor (HEMT) structures with lattice-matched or pseudomorphic channels have been grown by molecular-beam epitaxy (MBE). The purpose of this work is to enhance the channel conductivity by changing the epitaxial structure and growth process. With the use of pseudomorphic step quantum-well channel, the highest channel conductivity is achieved at x = 0.7, the corresponding electron mobilities are as high as 12300 (300 K) and 61000 cm(2)/V.s (77 K) with two-dimensional electron gas (2DEG) density of 3.3 x 10(12) cm(-2). These structures are comprehensively characterized by Hall measurements, photoluminescence, double crystal X-ray diffraction and transmission electron microscopy. Strong room-temperature luminescence is observed, demonstrating the high optical quality of the samples. We also show that decreasing the In composition in the InyAl1-yAs spacer is very effective to increase the 2DEG density of PHEMT structures. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

一种基于协商的软件过程协同方法

大型软件系统的开发大多要求多人协同完成·软件过程协同的一个重要特点是协同的参与者都试图通过实施协同任务来取得最大化的获利,因而协同的决策和实施不是强制性的,而是由软件开发人员或软件组织经过协商来进行的·传统的软件过程建模方法中对软件过程协同的描述是刚性的,即在满足进入条件或者被显式调用时,协同就一定会被触发,并按照一个规定好的规则或方针来实施,这样的方法难以适应软件过程协同中所表现的协商特性·提出了一个基于协商的软件过程协同方法,将软件过程描述为一组相对独立的、自治的、理性的、协作的软件过程Agent,过程Agent之间的协同关系由过程Agent通过协商确定,相比传统的方法,具有能够更好地适应软件过程协同的特点·

城市生活有机垃圾厌氧降解的过程机理与工程应用研究

首先进行城市生活有机垃圾典型组分的厌氧发酵产甲烷和产氢特性研究，在此基础上，设计厌氧发酵联产氢气和甲烷的组合工艺提高能源回收效率，并采用厨余垃圾和废纸联合厌氧消化的方式避免厨余垃圾单独厌氧消化的挥发性脂肪酸抑制。其次，结合国内近年出现的城市生活垃圾分选技术，分别以机械干分选有机垃圾和水分选有机垃圾为原料进行厌氧发酵产甲烷实验，并根据实验结果设计日处理500吨城市生活垃圾厌氧沼气工程及进行经济性评价。主要结论如下：（1）糖和淀粉类的生化产甲烷能力为260 mL/gVS，纤维素，粗纤维、蛋白类和脂类分别为244、145、258 、757 mL/gVS；蛋白质类原料在厌氧消化过程中容易形成“抑制型稳态”；脂类原料容易导致长链脂肪酸抑制。（2）碳水化合物（糖、淀粉和纤维素）是最佳的厌氧发酵制氢原料，蛋白类、脂类和木质纤维类均不适宜作为厌氧发酵制氢原料。采用厌氧发酵联产氢气和甲烷的组合工艺可以显著提高能源回收率。（3）厨余垃圾单独厌氧发酵容易受到VFAs的强烈抑制，采用厨余垃圾与废纸联合厌氧发酵，能够避免VFAs抑制。（4）水分选有机垃圾的生物可降解性优于机械干分选有机垃圾，在原料TS浓度为11%~16%时的甲烷产率为273~314 L/kgVS。（5）国家财政补贴，税收优惠和CDM额外收益决定了城市生活垃圾的厌氧消化与热电肥联产工程的经济可行性。