The thermal and mechanical structure of a two-dimensional plume in the earths mantle

On the condition that the distribution of velocity and temperature at the mid-plane of a mantle plume has been obtained (pages 213–218, this issue), the problem of determining the lateral structure of the plume at a given depth is reduced to solving an eigenvalue problem of a set of ordinary differential equations with five unknown functions, with an eigenvalue being related to the thermal thickness of the plume at this depth. The lateral profiles of upward velocity, temperature and viscosity in the plume and the thickness of the plume at various depths are calculated for two sets of Newtonian rheological parameters. The calculations show that the precondition for the existence of the plume, δT/L 1 (L = the height of the plume, δT = lateral distance from the mid-plane), can be satisfied, except for the starting region of the plume or near the base of the lithosphere. At the lateral distance, δT, the upward velocity decreases to 0.1 – 50% of its maximum value at different depths. It is believed that this model may provide an approach for a quantitative description of the detailed structure of a mantle plume.

IP Simulation of Micro Gas Flows under 3-D Head Sliders

Gas film lubrication of a three-dimensional flat read-write head slider is calculated using the information preservation (IP) method and the direct simulation Monte Carlo (DSMC) method, respectively. The pressure distributions on the head slider surface at different velocities and flying heights obtained by the two methods are in excellent agreement. IP method is also employed to deal with head slider with three-dimensional complex configuration. The pressure distribution on the head slider surface and the net lifting force obtained by the IP method also agree well with those of DSMC method. Much less (of the order about 10(2) less) computational time (the sum of the time used to reach a steady stage and the time used in sampling process) is needed by the IP method than the DSMC method and such an advantage is more remarkable as the gas velocity decreases.

Two-Dimensional Hillslope Scale Soil Erosion Model

On a hillslope, overland flow first generates sheet erosion and then, with increasing flux, it causes rill erosion. Sheet erosion (interrill erosion) and rill erosion are commonly observed to coexist on hillslopes. Great differences exist between both the intensities and incidences of rill and interrill erosion. In this paper, a two-dimensional rill and interrill erosion model is developed to simulate the details of the soil erosion process on hillslopes. The hillslope is treated as a combination of a two-dimensional interrill area and a one-dimensional rill. The rill process, the interrill process, and the joint occurrence of rill and interrill areas are modeled, respectively. Thus, the process of sheet flow replenishing rill flow with water and sediment can be simulated in detail, which may possibly render more truthful results for rill erosion. The model was verified with two sets of data and the results seem good. Using this model, the characteristics of soil erosion on hillslopes are investigated. Study results indicate that (1) the proposed model is capable of describing the complex process of interrill and rill erosion on hillslopes; (2) the spatial distribution of erosion is simulated on a simplified two-dimensional hillslope, which shows that the distribution of interrill erosion may contribute to rill development; and (3) the quantity of soil eroded increases rapidly with the slope gradient, then declines, and a critical slope gradient exists, which is about 15-20 degrees for the accumulated erosion amount.

Fabrication of two-dimensional periodic nanostructures by two-beam interference of femtosecond pulses

Two-dimensional periodic nanostructures on ZnO crystal surface were fabricated by two-beam interference of 790 nm femtosecond laser. The long period is, as usually reported, determined by the interference pattern of two laser beams. Surprisingly, there is another short periodic nanostructures with periods of 220-270 nm embedding in the long periodic structures. We studied the periods, orientation, and the evolution of the short periodic nanostructures, and found them analogous to the self-organized nanostructures induced by single fs laser beam. (C) 2008 Optical Society of America.

Fabrication of microelectrodes deeply embedded in LiNbO3 using a femtosecond laser

We present a novel technique to fabricate deeply embedded microelectrodes in LiNbO3 using femtosecond pulsed laser ablation and selective electroless plating. The fabrication process mainly consists of four steps, which are (1) micromachining of microgrooves on the surface of LiNbO3 by femtosecond laser ablation; (2) formation of AgNO3 films on substrates; (3) scanning the femtosecond laser beam in the fabricated microgrooves for modi. cation of the inner surfaces; and (4) electroless copper plating. The void-free electroless copper plating is obtained with appropriate cross section of microgrooves and uniform initiation of the autocatalytic deposition on the inner surface of grooves. The dimension and shape of the microelectrodes could be accurately controlled by changing the conditions of femtosecond laser ablation, which in turn can control the distribution of electric field inside LiNbO3 crystal for various applications, opening up a new approach to fabricate three-dimensional integrated electro-optic devices. (C) 2008 Elsevier B. V. All rights reserved.

Tm3+/Er3+/Yb3+-codoped oxyhalide tellurite glasses as materials for three-dimensional display

Blue, green and red emissions through frequency upconversion and energy transfer processes in Tm3+/Er3+/Yb3+-codoped oxyhalide tellurite glass under 980 nm excitation are investigated. The intense blue (476 nm), green (530 and 545 nm) and red (656 nm) emissions are simultaneously observed at room temperature. The blue (476 nm) emission was originated from the (1)G(4)->H-3(6) transition of Tm3+. The green (530 and 545 nm), and red (656 nm) upconversion luminescences were identified from the H-2(11/2)->I-4(15/2), S-4(3/2)->I-4(15/2), and F-4(9/2)->I-4(15/2) transitions of Er3+, respectively. The energy transfer processes and possible upconversion mechanisms are evaluated. (C) 2005 Elsevier B.V. All rights reserved.

Transparent colloid containing upconverting nanocrystals: An alternative medium for three-dimensional volumetric display

We report an alternative medium of transparent upconverting colloid containing lanthanide ion doped NaYF4 nanocrystals for three-dimensional (3D) volumetric display. The colloids exhibit tunable upconversion luminescence with a wide spectrum of colors by adjusting the doping concentrations of the nanocrystals and the compositions of the colloids. Our preliminary experimental result indicates that an upconverting colloid-based 3D volumetric display using a convergent, near infrared laser beam to induce a localized luminescent spot near the focus is technically feasible. Therefore arbitrary 3D objects can be created inside the upconverting colloid by use of computer controlled 3D scanning systems. (C) 2008 Optical Society of America

A fully three-dimensional atomistic quantum mechanical study on random dopant-induced effects in 25-nm MOSFETs

A fully 3-D atomistic quantum mechanical simulation is presented to study the random dopant-induced effects in nanometer metal-oxide-semiconductor field-effect transistors. The empirical pseudopotential is used to represent the single particle Hamiltonian, and the linear combination of bulk band method is used to solve the million atom Schrodinger equation. The gate threshold fluctuation and lowering due to the discrete dopant configurations are studied. It is found that quantum mechanical effects increase the threshold fluctuation while decreasing the threshold lowering. The increase of threshold fluctuation is in agreement with the researchers' early study based on an approximated density gradient approach. However, the decrease in threshold lowering is in contrast with the density gradient calculations.

Effect of electron-electron scattering on spin dephasing in a high-mobility low-density two-dimensional electron gas

By utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high-mobility low density two-dimensional electron gas in a GaAs/Al0.35Ga0.65As heterostructure in the dependence on temperature from 1.5 to 30 K. It is found that the spin relaxation/dephasing time under a magnetic field of 0.5 T exhibits a maximum of 3.12 ns around 14 K, which is superimposed on an increasing background with rising temperature. The appearance of the maximum is ascribed to that at the temperature where the crossover from the degenerate to the nondegenerate regime takes place, electron-electron Coulomb scattering becomes strongest, and thus inhomogeneous precession broadening due to the D'yakonov-Perel' mechanism becomes weakest. These results agree with the recent theoretical predictions [J. Zhou et al., Phys. Rev. B 15, 045305 (2007)], which verify the importance of electron-electron Coulomb scattering to electron spin relaxation/dephasing.

Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain in the stacked QD structures with stacking. The photoluminescence intensity from the QD structures first increases as the stacking number increases from 1 to 3 and then dramatically decreases as it further increases, implying a significant increase in the density of crystal defects in the stacked QD structures due to the accumulated strain. Furthermore, we demonstrate that the strain can be reduced by simply introducing annealing steps just after growing the GaAs spacers during the deposition of the stacked QD structures, leading to significant improvement in the surface and optical properties of the structures. (C) 2007 Elsevier B.V. All rights reserved.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

Comparison of Q-factors between TE and TM modes in 3-D microsquares by FDTD simulation

Mode characteristics of three-dimensional (3-D) microsquare resonators are investigated by finite-difference time-domain (FDTD) simulation for the transverse electric (TE)-like and the transverse magnetic (TM)-like modes. For a pillar microsquare with a side length of 2 pin in air, we have Q-factors about 5 X. 103 for TM-like modes at the wavelength of 1550 run, which are one order larger than those of TE-like modes, as vertical refractive index distribution is 3.17/3.4/3.17 and the cororresponding center layer thickness is 0.2 mu m. The mode field patterns show that TM-like modes have much weaker vertical radiation coupling loss than TE-like modes. TM-like modes can have high Q-factors in a microsquare with weak vertical field confinement.

Fabrication of high quality two-dimensional photonic crystal mask layer patterns

This work discusses the fabrication of two-dimensional photonic crystal mask layer patterns. Photonic crystal patterns having holes with smooth and straight sidewalls are achieved by optimizing electron beam exposure doses during electron beam lithography process. Thereafter, to precisely transfer the patterns from the beam resist to the SiO2 mask layer, we developed a pulse-time etching method and optimize various reaction ion etching conditions. Results show that we can obtain high quality two-dimensional photonic crystal mask layer patterns.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Iris recognition algorithm based on point covering of high-dimensional space and neural network

In this paper, we constructed a Iris recognition algorithm based on point covering of high-dimensional space and Multi-weighted neuron of point covering of high-dimensional space, and proposed a new method for iris recognition based on point covering theory of high-dimensional space. In this method, irises are trained as "cognition" one class by one class, and it doesn't influence the original recognition knowledge for samples of the new added class. The results of experiments show the rejection rate is 98.9%, the correct cognition rate and the error rate are 95.71% and 3.5% respectively. The experimental results demonstrate that the rejection rate of test samples excluded in the training samples class is very high. It proves the proposed method for iris recognition is effective.