The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films have been fabricated by implanting Mn into unintentionally doped nonpolar a-plane GaN films at room temperature, and a subsequent rapid thermal annealing. The X-ray diffraction analysis shows that after rapid thermal annealing the peak of the GaN X-ray diffraction curve shifts to a lower angle, indicating a slight expansion of the GaN crystal lattice. Atomic force microscopy analysis shows that the annealing process does not change the morphology of the sample greatly. Magnetic property analysis indicates that the as-annealed sample shows obvious ferromagnetic properties. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes

A small-size optical interleaver based on directional coupler in a 2D photonic crystal slab with triangular lattice of air holes is designed and theoretically simulated using plane wave expansion and finite-difference time-domain method. The interleaver is formed by two parallel and identical photonic crystal slab waveguides which are separated by three rows of air holes. The coupling region is designed below the light line to avoid vertical radiation. The simulated results show that the coupling coefficient is increased and the final length of the interleaver is decreased by enlarging the radius of the middle row of air holes. The transmission properties are analyzed after the interleaver's structure is optimized, and around 100 GHz channel spacing can be got when the length of the interleaver is chosen as 40.5 mu m. (c) 2006 Elsevier B.V. All rights reserved.

Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation

The reduction of residual strain in cubic GaN growth by inserting a thermoannealing process is investigated. It is found that the epilayer with smaller tensile strain is subject to a wider optimal "growth window." Based on this process, we obtain the high-quality GaN film of pure cubic phase with the thickness of 4 mum by metalorganic chemical vapor deposition. The photoluminescence spectrum at room temperature shows the thick GaN layer has a near-band emission peak with a full width at half maximum of 42 meV which confirms its high crystal quality, further supported by the x-ray (002) diffraction measurement. A simplified model is demonstrated to interpret this strain effect on the growth process. (C) 2003 American Institute of Physics.

Experimental measurement of microwave-induced electron spin-flip time

The electron spin resonance (ESR) is optically detected by monitoring the microwave-induced changes in the circular polarization of the neutral exciton (X) and the negatively charged exciton (X-) emission in CdTe quantum wells with low density of excess electrons. We find that the circular polarization of the X and X- emission is a mapping of the spin polarization of excess electrons. By analyzing the ESR-induced decrease in the circular polarization degree of the X emission, we deduce the microwave-induced electron spin-flip time >0.1 mus, which is much longer than the recombination time of X and X-. This demonstrates that the optically detected ESR in type I quantum wells with low density of excess electrons does not obey the prerequisite for the conventional optically detected magnetic resonance. (C) 2001 American Institute of Physics.

Anisotropic radiation pattern from InGaAlP quantum well mesa-like microdisks

To overcome the isotropic directional emission of an ideal circular microdisk, two kinds of cylindrical mesa-like InGaAlP single quantum well (SQW) microdisks emitting at a visible red wavelength of 0.66 mu m have been fabricated. An anisotropic luminescence pattern was revealed by the microscopic fluorescence (FL) image. FL intensity, preferentially enhanced with twofold symmetry, appeared at the circumference of the InGaAlP SQW microdisks. Our results demonstrated that anisotropic radiation can be achieved by geometry shaping of the disks on the top view two-dimensional boundary slightly deformed from circular shape and/or on the side-view cross-section of the circular mesa by wet etching anisotropic undercut. (C) 2000 Elsevier Science Ltd. All rights reserved.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Effect of Si doping on cubic GaN films grown on GaAs(100)

Epitaxial layers of cubic GaN have been grown by metalorganic vapor-phase epitaxy (MOVPE) with Si-doping carrier concentration ranging from 3 x 10(18) to 2.4 x 10(20)/cm(3). Si-doping decreased the yellow emission of GaN. However, the heavily doped n-type material has been found to induce phase transformation. As the Si-doping concentration increases, the hexagonal GaN nanoparticles increase. Judged from the linewidth of X-ray rocking curve, Si-doping increases the density of dislocations and stacking faults. Based on these observations, a model is proposed to interpret the phase transformation induced by the generated microdefects, such as dislocations and precipitates, and induced stacking faults under heavy Si-doping. (C) 1999 Elsevier Science B.V. All rights reserved.

A study of strong photoluminescence of SiOx : H films

We have examined photoluminescence (PL), IR absorption and Raman spectra of a series of hydrogenated amorphous silicon oxide (a-SiOx:H, (0 < x < 2)) films fabricated by plasma enhanced chemical vapor deposition (PECVD). Two strong luminescence bands were observed at room temperature, one is a broad envelope comprising a main peak around 670 nm and a shoulder at 835 nm, and the other, peaked around 850 nm; is found only after being annealed up to 1170 degrees C in N-2 environment. In conjunction with IR and Raman spectra, the origins of the two luminescent bands and their annealing behaviors are discussed on the basis of quantum confinement effects.

Magnetic resonant cavity composing of a three layered plasmonic nanostructure

The magnetic-type plasmon resonant of a metal-dielectric-metal nanocavity working at the wavelength of 1.55 mu m is explored, in which the upper layer is periodically patterned with metallic nanostrip arrays. In the dielectric film layer, the magnetic energy intensity is enhanced about 1700 times when irradiated with a p-polarized plane wave. We numerically studied the dispersion of the modes and the Q-value of this periodic cavity arrays. Q value is estimated about 18 and still has room for further improvement. It provides a new type of nanocavity that exhibits a strong magnetic response.

A novel DC-DC charge pump circuit for passive RFID transponder

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.

Modelica建模软件中求强连通分量与拓扑排序算法优化的研究

Modelica语言仿真建模在科研工作中已经得到了广泛应用。它能方便地对包含机械、电子、液压、控制、热流等领域的复合物理系统进行基于组件的仿真。现有基于Modelica语言的仿真建模软件支持图形化建模和文本建模两种方式，集成了面向对象、陈述式描述、统一建模、组件重用的优势，给科研工作带来了巨大的便利。 Modelica软件仿真的过程可归结为微分代数方程(differential algebraic equation,DAE)系统的求解。在求解DAE系统时，需要对DAE系统进行约简，直到庞大的DAE系统约简为目前自动求解方法成熟的ODE系统，或约简为方程个数不多的、指标较低的DAE系统，才能使Modelica建模仿真软件具有工业上的应用价值。在约简DAE系统之前，需要对之进行预处理，根据方程之间的数据依赖关系进行拓扑排序，确定求解顺序。排序的过程对应着将DAE系统结构关联矩阵进行块状下三角(block lower triangle,BLT)变换。寻找强连通分量和拓扑排序是对DAE系统进行预处理的重要组成部分。 本文剖析了Modelica软件在仿真时的运行机制，使用几个实例来详细描述在仿真过程中，Modelica软件完成的工作。在寻找强连通分量和拓扑排序这一步，本文提出了使用Kosaraju算法的策略，对由模型得到的有向图直接使用Kosaraju算法，得出DAE系统的求解顺序。文章叙述了强连通分量的含义，并阐述了在求强连通分量时的理论依据，由此引出了Tarjan算法和Kosaraju算法，再分析和比较Tarjan算法和Kosaraju算法，对比了两种策略的优劣，并进行了实验。同时，本文分析了OpenModelica软件包的结构，修改了软件包在寻找强连通分量及拓扑排序相关模块的代码。

automatic construction of finite algebras

This paper deals withmodel generation for equational theories, i.e., automatically generating (finite) models of a given set of (logical) equations. Our method of finite model generation and a tool for automatic construction of finite algebras is described. Some examples are given to show the applications of our program. We argue that, the combination of model generators and theorem provers enables us to get a better understanding of logical theories. A brief comparison between our tool and other similar tools is also presented.