Ti:sapphire laser pumped high average power laser crystal Nd:GGG with high efficiency output

High-quality neodymium doped GGG laser crystals have been grown by Czochralski (Cz) method. Results of Nd:GGG thin chip laser operating at 1.064 μm pumped by Ti:sapphire laser operating at 808 nm were reported. The slop efficiency was as high as 20%.

脉冲激光沉积法制备β-BBO薄膜

采用脉冲激光沉积法、选取β-BBO陶瓷作为靶材在掺Sr^2＋的α-BBO（001）衬底上进行了生长β-BBO薄膜的实验，生长出表面光滑、无色透明的薄膜。采用X射线粉末衍射（XRD）、高分辨X射线衍射仪（XRC）对薄膜进行分析测试，结果表明，所制备的β-BBO薄膜择优取向为（001）面，薄膜的双晶摇摆曲线半峰宽值FWHM为1000＂左方无显示出β-BBO薄膜较好的结晶质量，其紫外吸收边同β-BBO单晶一样也为190nm，但薄膜的透过率略有下降。采用调Q脉冲Nd：YAG激光器观察了β-BBO薄膜的倍频效应。

Laser induced damage of multi-layer dielectric used in pulse compressor gratings

Laser induced damage threshold (LIDT) of multi-layer dielectric used in pulse compressor gratings (PCG) was investigated. The sample was prepared by e-beam evaporation (EBE). LIDT was detected following ISO standard 11254-1.2. It was found that LIDTs of normal and 51.2 deg. incidence (transverse electric (TE) mode) were 14.14 and 9.31 J/cm2, respectively. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was pit-concave-plat structure for normal incidence, while it was pit structure for 51.2 deg. incidence with TE mode. The electric field distribution was calculated to illuminate the difference of LIDT between the two incident cases.