Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Surface Emitting Distributed Feedback Quantum Cascade Laser around 8.3 mu m

We demonstrate surface emitting distributed feedback quantum cascade lasers emitting at wavelengths from 8.1 mu m at 90 K to 8.4 mu m at 210 K. The second-order metalized grating is carefully designed using a modified coupled-mode theory and fabricated by contact lithography. The devices show single mode behavior with a side mode suppression ratio above 18 dB at all working temperatures. At 90 K, the device emits an optical power of 101 mW from the surface and 199 mW from the edge. In addition, a double-lobe far-field pattern with a separation of 2.2 degrees is obtained in the direction along the waveguide.

Strain effects on optical polarisation properties in (11(2)over-bar2) plane GaN films

We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11 (2) over bar2)-plane The calculations are performed by the kappa p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction The results show that the transition energies decrease with the biaxial strains changing from -0 5% to 0 5% For films of (11 (2) over bar2)-plane, the strains are expected to be anisotropic in the growth plane Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property The strain can also result in optical polarisation switching phenomena Finally, we discuss the applications of these properties to the (11 (2) over bar2) plane GaN based light emitting diode and lase diode

沈阳市苔藓植物及其对大气质量的指示作用

沈阳是东北地区重要的老工业基地，也是该地区的交通枢纽。本文在对沈阳市进行广泛调查并采集苔藓植物标本的基础上，系统地研究了沈阳市苔藓植物的种类构成、区系、分布格局及其与环境因子的关系，同时利用苔藓植物对沈阳市的大气质量进行了指示。得出的主要结论有： （1）对882份苔藓植物标本进行鉴定，共记录苔藓植物30科67属143种及变种，其中包括苔类（含角苔）9科11属14种，藓类21科56属128种1变种。在记录中发现辽宁省新记录属1个，新纪录种36种，东北新纪录种18种，主要以丛藓科（Pottiaceae）和真藓科（Bryaceae）等地面生藓类为主。 （2）将研究区苔藓植物划分为10个区系成分，其中以北温带分布占据绝对优势，其次为东亚分布和中国特有分布，具强烈的温带性质。通过相似性系数的计算，表明沈阳市苔藓植物区系与鞍山市和抚顺市的亲缘性较大；与上海市和杭州市亲缘性较远。 （3）应用TWINSPAN和DCA，以样点为对象，苔藓植物的重要值为指标，对研究区苔藓植物分布格局进行了分析。结果将样点划分为三个组，从组一到组三，物种丰富度和苔藓盖度逐渐增加。分类与排序的结果与样点的实际物种分布特点基本一致。 （4）采用CCA对沈阳市35种主要地面苔藓植物与环境因子间的关系进行了分析。根据环境因子的影响，将沈阳市主要地面苔藓植物分为两类。同时发现土壤含水量、乔木层郁闭度和人为干扰是影响沈阳市苔藓植物分布的主要因素。 （5）采用大气净度指数法（IAP）和重金属元素（Mn, Fe, Cu, Cr和Pb）化学分析法对沈阳市的大气质量进行了监测。结果表明市区污染远重于郊区，市区西部污染重于东部，南部重于北部；各区以Pb污染最为严重，值得重视。同空气污染指数（API）进行比较，发现IAP与Cu、Pb和API之间具显著负相关性，说明随着重金属含量和API值的升高，IAP值降低，即苔藓植物的种类和盖度下降。以IAP值为自变量，API值为因变量，建立了回归方程y=-0.914x+101.849，进一步说明了IAP值与API值之间的关系。