Low threshold current density, low resistance oxide-confined VCSEL fabricated by a dielectric-free approach

We present the fabrication process and experimental results of 850-nm oxide-confined vertical cavity surface emitting lasers (VCSELs) fabricated by using dielectric-free approach. The threshold current of 0.4 mA, which corresponds to the threshold current density of 0.5 kA/cm(2), differential resistance of 76 Omega, and maximum output power of more than 5 mW are achieved for the dielectric-free VCSEL with a square oxide aperture size of 9 mu m at room temperature (RT). L-I-V characteristics of the dielectric-free VCSEL are compared with those of conventional VCSEL with the similar aperture size, which indicates the way to realize low-cost, low-power consumption VCSELs with extremely simple process. Preliminary study of the temperature-dependent L-I characteristics and modulation response of the dielectric-free VCSEL are also presented.

16-channel 0.35 mu m CMOS/VCSEL optoelectronic devices

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1 x 16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 mum CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

Hybrid CMOS/VCSEL optoelectronic modules

We report some investigations on vertical cavity surface emitting laser (VCSEL) arrays and VCSEL based optoelectronic smart photonic multiple chip modules (MCM), consisting of 1x16 vertical cavity surface emitting laser array and 16-channel lasers driver 0.35 Pin CMOS circuit. The hybrid integrated multiple chip modules based on VCSEL operate at more than 2GHz in -3dB frequency bandwidth.

VCSEL based optoelectronic multiple chip modules

We report on optoelectronic multiple chip modules, consisting of vertical cavity surface emitting laser(VCSEL), photodetector and 1.2 mum CMOS electronic circuit, The hybrid integrated components operate at a date rate of 155Mb/s, which could be used in optical interconnects for multiple computers.

SiGe/Si quantum well resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report a novel SiGe/Si multiple quantum-well resonant-cavity-enhanced photodetector fabricated on a separation-by-implanted-oxygen wafer operating near 1300nm. The buried oxide layer in SIMOX is used as a bottom mirror to form a vertical cavity with silicon dioxide/silicon Bragg reflector deposited on the top surface. The quantum efficiency at the wavelength of 1300nm is measured with 3.5% at a reverse bias of 15V, which is enhanced by 10 folds compared with a conventional photodetector with the same absorption structures.

Cooperative spontaneous emission of excitons in the semiconductor microcavity

We have studied the spontaneous emission of polarized excitons in the GaInP/AlGaInP VCSEL from 30K to room temperature. It is observed that the spontaneous emission peak enters and leaves the resonant regime. At the resonant regime, the emission intensities of the perpendicular and horizontal polarized exciton are enhanced at different ratio to those in non-resonant regime. These experiment results are explained through the dressed exciton theory of the semiconductor microcavity device. From this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy.

Si-based resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

Radiation of dressed excitons in the semiconductor microcavity

In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.

The application of parallel optical transmitter and receiver modules in communication subsystems

A new 12 channels parallel optical transmitter module in which a Vertical Cavity Surface Emitting Laser (VCSEL) has been selected as the optical source is capable of transmitting 37.5Gbps date over hundreds meters. A new 12 channels parallel optical receiver module in which a GaAs PIN (p-intrinsic-n-type) array has been selected as the optical receiver unit is capable of responding to 30Gbps date. A transmission system based on a 12 channels parallel optical transmitter module and a 12 channels parallel optical receiver module can be used as a 10Gbps STM-64 or an OC-192 optical transponder. The parallel optical modules and the parallel optical transmission system have passed the test in laboratory.

VCSEL-based parallel optical transmission module

This paper describes the design process and performance of the optimized parallel optical transmission module. Based on 1x12 VCSEL (Vertical Cavity Surface Emitting Laser) array, we designed and fabricated the high speed parallel optical modules. Our parallel optical module contains a 1x12 VCSEL array, a 12 channel CMOS laser driver circuit, a high speed PCB (Printed Circuit Board), a MT fiber connector and a packaging housing. The L-I-V characteristics of the 850nm VCSEL was measured at the operating current 8mA, 3dB frequency bandwidth more than 3GHz and the optical output 1mW. The transmission rate of all 12 channels is 30Gbit/s, with a single channel 2.5Gbit/s. By adopting the integration of the 1x12 VCSEL array and the driver array, we make a high speed PCB (Printed Circuit Board) to provide the optoelectronic chip with the operating voltage and high speed signals current. The LVDS (Low-Voltage Differential Signals) was set as the input signal to achieve better high frequency performance. The active coupling was adopted with a MT connector (8 degrees slant fiber array). We used the Small Form Factor Pluggable (SFP) packaging. With the edge connector, the module could be inserted into the system dispense with bonding process.

High Speed VCSEL-Based Parallel Optical Transmission Modules

Design and fabrication of a parallel optical transmitter are reported. The optimized 12 channel parallel optical transmitter,with each channel＇s data rate up to 3Gbit/s,is designed, assembled, and measured. A top-emitting 850nm vertical cavity surface emitting laser（VCSEL） array is adopted as the light source,and the VCSEL chip is directly wire bonded to a 12 channel driver IC. The outputs of the VCSEL array are directly butt coupled into a 12 channel fiber array. Small form factor pluggable （SFP） packaging technology is used in the module to support hot pluggable in application. The performance results of the module are demonstrated. At an operating current of 8mA, an eye diagram at 3Gbit/s is achieved with an optical output of more than 1mW.

1.55-μm Si-based MOEMS optical tunable filter

A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.

Micromechanical Tunable Optical Filter

A micromachined vertical cavity tunable filter with AlGaAs/GaAs distributed Bragg reflector is presented. This filter can be electrostatic tuning over a range of 28nm with an applied voltage of 7V.

10Gbit/s甚短距离(VSR)并行光传输系统

介绍了一个适用于甚短距离(Very Short Reach,VSR)网络传输的并行光传输系统。系统的发射部分用垂直腔面发射激光器(vERTICAL cAVITY sURFACE eMITTING lASER,vcsel)1×12列阵代替传统的边发射激光器，接收部分也采用相应的探测器列阵，并由多模光纤列阵相连接，在300m距离内以单信道1．25Gbit/s速率实现的10Gbit/s的高传输速率。

Spatial Mode Selection by the Phase Modulation of Subwavelength Plasmonic Grating

The extraordinary transmission of the subwavelength gold grating has been investigated by the rigorous coupled-wave analysis and verified by the metal-insulator-metal plasmonic waveguide method. The physical mechanisms of the extraordinary transmission are characterized as the excitation of the surface plasmon polariton modes. The subwavelength grating integrated with the distributed Bragg reflector is proposed to modulate the phase to realize spatial mode selection, which is prospected to be applied for transverse mode selection in the vertical cavity surface-emitting laser.