84 resultados para vapor transport equilibration (VTE)


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A theoretical description of chloride vapour-phase epitaxy (CVPE) has been proposed which contains two-dimensional (2D) gas-dynamic equations for transport of reactive components and kinetic equations for surface growth processes connected by nonlinear adiabatic boundary conditions. No one of these stages is supposed to be the limiting one. Calculated variations of growth rate and impurity concentrations along the growing layer fit experimental data well.

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A thermodynamic model for the GaSb-GaCl3 system in a closed quartz ampoule was proposed. The species in the gas phase are GaCl, GaCl3, Sb-4, Sb-2. The partial pressures of these species and total pressure in the ampoule have been calculated. The calculated results indicate that the equilibrium partial pressures of GaCl, GaCl3, Sb4, Sb2 and the total pressure in the ampoule have strong dependence on temperature, free volume inside the closed ampoule and amount of transport agent GaCl3. The total pressure will give strong influence not only on the flow pattern in the ampoule, but also on the uniformity of the epilayer.

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Equilibration and equilibration rates have been measured by colliding Sn nuclei with different isospin asymmetries at beam energies of E/A = 35 MeV. Using the yields of mirror nuclei of Li-7 and Be-7, we have studied the diffusion of isospin asymmetry by combining data from asymmetric Sn-112 + Sn-124 and Sn-124 + Sn-112 collisions with those from symmetric Sn-112 + Sn-112 and Sn-124 + Sn-124 collisions. We use these measurements to probe isospin equilibration in central collisions where nucleon-nucleon collisions are strongly blocked by the Pauli exclusion principle. The results are consistent with transport theoretical calculations that predict a degree of transparency in these collisions, but inconsistent with the emission of intermediate mass fragments by a single chemically equilibrated source. Comparisons with quantum molecular dynamics calculations are consistent with results obtained at higher incident energies that provide constraints on the density dependence of the symmetry energy.

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Nanoscale-phase separation of electron donor/acceptor blends is crucial for efficient charge generation and collection in Polymer bulk heterojunction photovoltaic cells. We investigated solvent vapor annealing effect of poly(3-hexylthiophene) (P3HT)/methanofullerene (PCBM) blend oil its morphology and optoelectronic properties. The organic solvents of choice for the treatment have a major effect oil the morphology of P3HT/PCBM blend and the device performance. Ultraviolet-visible absorption spectro,;copy shows that specific solvent vapor annealing can induce P3HT self-assembling to form well-ordered structure; and hence, file absorption in the red region and the hole transport are enhanced. The solvent that has a poor Solubility to PCBM Would cause large PCBM Clusters and result in a rough blend film. By combining an appropriate solvent vapor treatment and post-thermal annealing of the devices, the power conversion efficiency is enhanced.

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Needle-like single crystals of poly(3-octylthiophene) (P3OT) have been prepared by tetrahydrofuran-vapor annealing. The morphology and structure of the crystals were characterized with optical microscopy, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and wide-angle X-ray diffraction. It is observed that the P3OT molecules are packed with the backbones parallel to the length axis of the crystal and the alkyl side chains perpendicular to the substrate. The field effect transistor based on the P3OT single crystal exhibited a charge carrier mobility of 1.54 x 10(-4) cm(2)/(Vs) and on/off current ratio of 37, and the molecular orientation of the crystal is ascribed to account for the device performance. The time-dependent morphological evolution demonstrated that the crystals underwent Ostwald ripening when annealed.

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The authors report enhanced poly(3-hexylthiophene) (P3HT):methanofullerene (PCBM) bulk-heterojunction photovoltaic cells via 1,2-dichlorobenzene (DCB) vapor treatment and thermal annealing. DCB vapor treatment can induce P3HT self-organizing into ordered structure leading to enhanced absorption and high hole mobility. Further annealing the device at a high temperature, PCBM molecules begin to diffuse into aggregates and together with the ordered P3HT phase form bicontinuous pathways in the entire layer for efficient charge separation and transport. Compared to the control device that is merely annealed, optical absorption, short-circuit current, and power conversion efficiency are increased for the DCB vapor-treated cell.

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The novel polyetherethersulfone (PES-C) prepared from phenol-phthalein in our institute is an amorphous, rigid, tough material with good mechanical properties over a wide temperature range. To improve its water vapor permeability for the application of gas drying, the PES-C was sulfonated with concentrated sulfuric acid and transferred in sodium, cupric, and ferric salt forms. The sulfonation degree can be regulated by controlling the temperature and reaction time. Characterization of sulfonated PES-C in sodium form was made by IR. Some properties of the sulfonated PES-C, such as solubility, glass transition temperature, thermal stability, mechanical properties, and transport properties to nitrogen and water vapor have also been discussed. (C) 1997 John Wiley & Sons, Inc.

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The novel polyetheretherketone (PEK-C) prepared from phenolphthalein in our institute is an amorphous, rigid, tough material with good mechanical properties over a wide temperature range. To improve its water vapor permeability for the application of gas drying, PEK-C was sulfonated with concentrated sulfuric acid and transferred in sodium, cupric, and ferric salt forms. Sulfonation degree can be regulated by controlling the temperature and reaction time. Characterization of sulfonated PEK-C in sodium form was made by infrared spectroscopy. Some properties of the sulfonated PEK-C, such as solubility, glass transition temperature, thermal stability, mechanical properties, and transport properties to nitrogen and water vapor, are also discussed. (C) 1996 John Wiley & Sons, Inc.

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Classical theories have successfully provided an explanation for convection in a liquid layer heated from below without evaporation. However, these theories are inadequate to account for the convective instabilities in an evaporating liquid layer, especially in the case when it is cooled from below. In the present paper, we study the onset of Marangoni convection in a liquid layer being overlain by a vapor layer.A new two-sided model is put forward instead of the one-sided model in previous studies. Marangoni-Bénard instabilities in evaporating liquid thin layers are investigated with a linear instability analysis. We define a new evaporation Biot number, which is different from that in previous studies and discuss the influences of reference evaporating velocity and evaporation Biot number on the vapor-liquid system. At the end, we explain why the instability occurs even when an evaporating liquid layer is cooled from below.

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Single crystal gallium nitride (GaN) is an important technological material used primarily for the manufacture of blue light lasers. An important area of contemporary research is developing a viable growth technique. The ammonothermal technique is an important candidate among many others with promise of commercially viable growth rates and material quality. The GaN growth rates are a complicated function of dissolution kinetics, transport by thermal convection and crystallization kinetics. A complete modeling effort for the growth would involve modeling each of these phenomena and also the coupling between these. As a first step, the crystallization and dissolution kinetics were idealized and the growth rates as determined purely by transport were investigated. The growth rates thus obtained were termed ‘transport determined growth rates’ and in principle are the maximum growth rates that can be obtained for a given configuration of the system. Using this concept, a parametric study was conducted primarily on the geometric and the thermal boundary conditions of the system to optimize the ‘transport determined growth rate’ and determine conditions when transport might be a bottleneck.

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Sand velocity in aeolian sand transport was measured using the laser Doppler technique of PDPA (Phase Doppler Particle Analyzer) in a wind tunnel. The sand velocity profile, probability distribution of particle velocity, particle velocity fluctuation and particle turbulence were analyzed in detail. The experimental results verified that the sand horizontal velocity profile can be expressed by a logarithmic function above 0.01 in, while a deviation occurs below 0.01 m. The mean vertical velocity of grains generally ranges from -0.2 m/s to 0.2 m/s, and is downward at the lower height, upward at the higher height. The probability distributions of the horizontal velocity of ascending and descending particles have a typical peak and are right-skewed at a height of 4 turn in the lower part of saltation layer. The vertical profile of the horizontal RMS velocity fluctuation of particles shows a single peak. The horizontal RMS velocity fluctuation of sand particles is generally larger than the vertical RMS velocity fluctuation. The RMS velocity fluctuations of grains in both horizontal and vertical directions increase with wind velocity. The particle turbulence intensity decreases with height. The present investigation is helpful in understanding the sand movement mechanism in windblown sand transport and also provides a reference for the study of blowing sand velocity. (C) 2007 Elsevier B.V All rights reserved.

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Sediment transport in rill flows exhibits the characteristics of non-equilibrium transport, and the sediment transport rate of rill flow gradually recovers along the flow direction by erosion. By employing the concept of partial equilibrium sediment transport from open channel hydraulics, a dynamic model of rill erosion on hillslopes was developed. In the model, a parameter, called the restoration coefficient of sediment transport capacity, was used to express the recovery process of sediment transport rate, which was analysed by dimensional analysis and determined from laboratory experimental data. The values of soil loss simulated by the model were in agreement with observed values. The model results showed that the length and gradient of the hillslope and rainfall intensity had different influences on rill erosion. Copyright (c) 2006 John Wiley & Sons, Ltd.

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The problem of predicting sediment transportation by water waves is treated analytically with the rate of wave energy dissipation or wave damping. With resorting to the theory of shallow water waves and the basis of Yamamoto’s Coulomb-damped poroelastic model, the Boussinesq-type equation has been derived over a variation depth bed. For convenience Cnoidal wave is just discussed, The Cnoidal wave with complex wave length and wave velocity, which are as a function of wave frequency, water depth, permeability, Poisson’s ratio and complex elastic moduli of bed soil, is applied to analyse the rate of sediment transportation. Considering the sediment transportation depended on the shear stress near-bed or the horizontal velocity, the conclusion of Yamamoto’s experiment in clay bed has been extended to general situation. It could be figured out that the model should provide a method to avoid the undistinguishable factors during sediment transport processes and relate mass transport with the sediment peculiarities.

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GaN can be used to fabricate blue/green/UV LEDs and high temperature, high power electronic devices. Ideal substrates are needed for high quality III-nitride epitaxy, which is an essential step for the manufacture of LEDs. GaN substrates are ideal to be lattice matched and isomorphic to nitride-based films. Bulk single crystals of GaN can be grown from supercritical fluids using the ammonothermal method, which utilizes ammonia as fluid rather than water as in the hydrothermal process. In this process, a mineralizer such as amide, imide or azide is used to attack a bulk nitride feedstock at temperatures from 200 - 500癈 and pressures from 1 - 4 kbar. Baffle design is essential for successful growth of GaN crystals. Baffle is used to separate the dissolving zone from the growth zone, and to maintain a temperature difference between the two zones. For solubility curve with a positive coefficient with respect to temperature, the growth zone is maintained at a lower temperature than that in the dissolving zone, thus the nutrient becomes supersaturated in the growth zone. The baffle opening is used to control the mixing of nutrients in the two zones, thus the transfer of nutrient from the lower part to the upper part. Ammonothermal systems have been modeled here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. We investigated the effects of baffle opening and position on the transport phenomena of nutrient from dissolving zone to the growth zone. Simulation data have been compared qualitatively with experimental data.