198 resultados para single mode fiber


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High-speed free-space optical communication systems have recently used fiber-optical components. The coupling efficiency with which the received laser beam can be coupled into a single-mode fiber is noticeably limited by atmospheric turbulence due to the degradation of its spatial coherence. Fortunately, adaptive optics (AO) can alleviate this limitation by partially correcting the turbulence-distorted wavefront. The coupling efficiency improvement provided by Zernike modal AO correction is numerically evaluated. It is found that the first 3-20 corrected polynomials can considerably improve the fiber-coupling efficiency. The improvement brought by AO is compared with that brought by a coherent fiber array. Finally, a hybrid technique that integrates AO and a coherent fiber array is proposed. Results show that the hybrid technique outperforms each of the two above-mentioned techniques. (C) 2009 Elsevier GmbH. All rights reserved.

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We report single mode and multimodes lasing emission from conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) doped polystyrene ( PS) thin films with surface ripples. Surface ripples were formed by water vapour-induced phase separation. A single mode lasing emission at 606 nm with a line-width of less than 0.4 nm was obtained. The laser threshold was as low as 3.5 mu J pulse(-1). The side mode suppression ratio was 5.76 dB. The periodic changes of the refraction index in the MEH-PPV : PS blending film due to the phase separation should be attributed to the lasing actions.

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傍轴近似下的光学矩阵理论,可以简化光束传输计算过程,使光学系统设计更为方便。将ABCD变换矩阵方法引入到耦合光学系统的设计中,运用高斯光束的ABCD法则,详尽地给出了某一耦合方式下的半导体激光器耦合入单模光纤系统的设计;另一方面,对系统的耦合损耗与耦合距离的关系进行了理论计算,并把计算结果与最近的实验报道做了比较,它们基本相吻合,说明此方法是可行的、合理的。从整个设计及理论计算来看,ABCD矩阵方法减少了复杂的计算,从而简化了设计过程,与通常的衍射计算相比,它不失为一种方便、有效的方法,同时它对生产半导体

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单纵模掺铒光纤激光器在光通信和光传感等方面有着广泛的应用前景。设计了一种新型的光纤激光器,在光纤环形镜中嵌入未抽运的掺铒光纤作为可饱和吸收体以抑制多纵模,用光纤环谐振腔作为滤波器抑制拍频噪声,用光纤光栅作为波长选择器件,最终得到了单纵模输出并消除了拍频噪声。使用零拍法测量其线宽小于频谱仪的低频极限5kHz。实验结果证明了可饱和吸收体和光纤环的功能。

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通过在线形谐振腔中引入一段缠绕在压电陶瓷上的单模光纤作为正弦相位调制器,使得激射波长的损耗不固定,抑制由于掺铒光纤的均匀展宽效应引起的模式竞争,从而避免了在室温下不稳定的单波长激射,实现了多波长掺铒光纤激光器的稳定输出。为了获得平坦的多波长输出,在谐振腔里使用了一个损耗峰位于1530nm处的长周期光纤光栅,以获得较为平坦的增益谱。通过两个3dB耦合器制成的反射型梳状滤波器的滤波作用,实验中观察到稳定的多波长激射,相邻波长间隔约为0.45nm。中心9个波长的输出功率平坦度为10dB,边模抑制比大于25dB。

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Coupling a single-mode laser diode with 200 mW to a single-mode fiber (SMF) through an orthonormal aspherical cylindrical lens and a GRIN lens for the intersatellite optical communication system is proposed and demonstrated. We experimentally studied how the coupling efficiency changes with the SMF's position displacement and axial angle variation, and obtained 80 mW output power at the end of the SMF, which shows that the coupling units have satisfied the designed request. (c) 2007 Elsevier GmbH. All rights reserved.

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提出并实验证实了一种刻写光栅时既能保护相位版又能对光栅的反射波长进行微调的方法.通过调整光纤和相位版之间的距离,利用1550nm单模光纤和掺铒分别实现了0.48nm和2.2nm的光栅反射波长的调节.在相位版和光纤之间的距离保持在3mm的条件下,既可以保护相位版又可以获得高质量的光栅.

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大模场面积(LMA)光纤激光器的光束质量通常比单模光纤激光器的光束质量差。采用光纤拉锥的方法进行模式选择,从而提高大模场直径光纤激光器的光束质量。拉锥区距光纤激光器的输出端约5 mm,纤芯最小为9 μm,约为未拉锥部分纤芯直径26 μm的1/3。实验研究表明,在拉锥后,光纤激光器的光束质量因子M2由3.50减小为1.81,相应的斜率效率由63.6%减小为51.1%。虽然拉锥后最大输出功率减少了约19.8%,但其亮度增大为拉锥前的3倍。

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A 40-Gb/s monolithically integrated transmitter containing an InGaAsP multiple-quantum-well electroabsorption modulator (EAM) with lumped electrode and a distributed-feedback semiconductor laser is demonstrated. Superior characteristics are exhibited for the device, such as low threshold current of 20 mA, over 40-dB sidemode suppression ratio at 1550 nm, and more than 30-dB dc extinction ratio when coupled into a single-mode fiber. By adopting a deep ridge waveguide and planar electrode structures combined with buried benzocyclobutene, the capacitance of the EAM is reduced to 0.18 pF and the small-signal modulation bandwidth exceeds 33 GHz. Negative chirp operation is also realized when the bias voltage is beyond 1.6 V.

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A thermo-optic variable optical attenuator (VOA) based on a Mach-Zehnder interferometer and multimode-interference coupler is fabricated. Not a single-mode but a multimode waveguide is used as the input and output structures of the optical field, which greatly reduces the coupling loss of the VOA with a normal single-mode fiber. The insertion loss of the fabricated VOA is 2.52 to 2.82 dB at the wavelength of 1520 to 1570 nm. The polarization dependent loss is 0.28 to 0.45 dB at the same wavelength range. Its maximum attenuation range is up to 26.3 dB when its power consumption is 369 mW. The response frequency of the fabricated VOA is about 10 kHz. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

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A strained InGaAsP-InP multiple-quantum-well DFB laser monolithically integrated with electroabsorption modulator by ultra-low-pressure (22 mbar) selective-area-growth is presented. The integrated chip exhibits superior characteristics, such as low threshold current of 19 mA, single-mode operation around 1550 nm range with side-mode suppression ratio over 40 dB, and larger than 16 dB extinction ratio when coupled into a single-mode fiber. More than 10 GHz modulation bandwidth is also achieved. After packaged in a compact module, the device successfully performs 10-Gb/s NRZ transmission experiments through 53.3 km of standard fiber with 8.7 dB dynamic extinction ratio. A receiver sensitivity of -18.9 dBm at bit-error-rate of 10(-1)0 is confirmed. (c) 2005 Elsevier B.V. All rights reserved.

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In this work, a novel light source of strained InGaAsP/InGaAsP MQW EAM monolithically integrated with DFB laser is fabricated by ultra-low-pressure (22 x 10(2) Pa) selective area growth ( SAG) MOCVD technique. Superior device performances have been obtained, sue h as low threshold current of 19 mA, output light power of about 7 mW, and over 16 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3 dB bandwidth in EAM part is developed with a driving voltage of 3 V. After the chip is packaged into a 7-pin butterfly compact module, 10-Gb/s NRZ transmission experiments are successfully performed in standard fiber. A clearly-open eye diagram is achieved in the module output with over 8.3 dB dynamic extinction ratio. Power penalty less than 1.5 dB has been obtained after transmission through 53.3 km of standard fiber, which demonstrates that high-speed, low chirp EAM/DFB integrated light source can be obtained by ultra-low-pressure (22 x 102 Pa) SAG method.

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In this work, a novel light source of tandem InGaAsP/InGaAsP multiple quantum well electroabsoption modulator( EAM ) monolithically integrated with distributed feedback laser is fabricated by ultra-low-pressure ( 22 x 10(2) Pa ) selective area growth metal-organic chemical vapor diposition technique. Superior device performances have been obtained, such as low threshold current of 19 mA, output light power of 4.5 mW, and over 20 dB extinction ratio at 5 V applied voltage when coupled into a single mode fiber. Over 10 GHz 3dB bandwidth in EAM part is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device, 10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained due to the gate operation effect of tandem EAMs.

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A new type of self-aligned spotsize converter (SSC) integrated 1.55 mum DFB lasers had been proposed in this article. The upper optical confinement layer and the butt-coupled tapered thickness waveguide were regrown simultaneously, which not only offered the separate optimization of the active region and the integrated SSC, but also reduced the difficulty of the butt-joint selective regrowth. The vertical and horizontal far field angles were 9degrees and 12degrees respectively, the 1- dB misalignment tolerance were both 3.6 and 3.4 mum. The directed coupling efficiency to tapered single mode fiber was 48%.

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Wavelength tunable electro-absorption modulated distributed Bragg reflector lasers (TEMLs) are promising light source in dense wavelength division multiplexing (DWDM) optical fiber communication system due to high modulation speed, small chirp, low drive voltage, compactness and fast wavelength tuning ability. Thus, increased the transmission capacity, the functionality and the flexibility are provided. Materials with bandgap difference as large as 250nm have been integrated on the same wafer by a combined technique of selective area growth (SAG) and quantum well intermixing (QWI), which supplies a flexible and controllable platform for the need of photonic integrated circuits (PIC). A TEML has been fabricated by this technique for the first time. The component has superior characteristics as following: threshold current of 37mA, output power of 3.5mW at 100mA injection and 0V modulator bias voltage, extinction ratio of more than 20 dB with modulator reverse voltage from 0V to 2V when coupled into a single mode fiber, and wavelength tuning range of 4.4nm covering 6 100-GHz WDM channels. A clearly open eye diagram is observed when the integrated EAM is driven with a 10-Gb/s electrical NRZ signal. A good transmission characteristic is exhibited with power penalties less than 2.2 dB at a bit error ratio (BER) of 10(-10) after 44.4 km standard fiber transmission.