Spatial and Temporal Variation of LURR and Its Implication for the Tendency of Earthquake Occurrence in Southern California

Based on the theory of LURR and its recent development, spatial and temporal variation of Y/Y-c (value of LURR/critical value of LURR) in the Southern California region during the period from 1980 through March, 2001 was studied. According to the previous study on the fault system and stress field in Southern California, we zoned the Southern California region into 11 parts in each of which the stress field is almost uniform. With the time window of one year, time moving step of three months, space window of a circle region with a radius of 100 km and space moving step of 0.25 degree in latitude and longitude direction, the evolution of Y/Y-c were snapshot. The scanning results show that obvious Y/Y-c anomalies occurred before 5/6 of strong earthquakes considered with a magnitude of 6.5 or greater. The critical regions of Y/Y-c are near the epicenters of the strong earthquakes and the Y/Y-c anomalies occur months to years prior to the earthquakes. The tendency of earthquake occurrence in the California region is briefly discussed on the basis of the examination of Y/Y-c.

Plastic Deformation Of Nanocrystalline Nickel

A high-resolution electron microscopy study has uncovered the plastic behavior of accommodating large strains in nanocrystalline (NC) Ni subject to cold rolling at liquid nitrogen temperature. The activation of grain-boundary-mediated-plasticity is evidenced in NC-Ni, including twinning and formation of stacking fault via partial dislocation slips from the grain boundary. The formation and storage of 60A degrees full dislocations are observed inside NC-grains. The grain/twin boundaries act as the barriers of dislocation slips, leading to dislocation pile-up, severe lattice distortion, and formation of sub-grain boundary. The vicinity of grain/twin boundary is where defects preferentially accumulate and likely the favorable place for onset of plastic deformation. The present results indicate the heterogeneous and multiple natures of accommodating plastic strains in NC-grains.

Growth of (10(1)over-bar(3)over-bar) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy

The crystalline, surface, and optical properties of the (10 (1) over bar(3) over bar) semipolar GaN directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) were investigated. It was found that the increase of V/III ratio led to high quality (10 (1) over bar(3) over bar) oriented GaN epilayers with a morphology that may have been produced by step-flow growth and with minor evidence of anisotropic crystalline structure. After etching in the mixed acids, the inclined pyramids dominated the GaN surface with a density of 2 X 10(5) cm(-2), revealing the N-polarity characteristic. In the low-temperature PL spectra, weak BSF-related emission at 3.44eV could be observed as a shoulder of donor-bound exciton lines for the epilayer at high V/III ratio, which was indicative of obvious reduction of BSFs density. In comparison with other defect related emissions, a different quenching behavior was found for the 3.29 eV emission, characterized by the temperature-dependent PL measurement. (C) 2009 Elsevier B.V. All rights reserved.

A time-varying controllable fault-tolerant field associative memory model and its simulation

A time-varying controllable fault-tolerant field associative memory model and the realization algorithms are proposed. On the one hand, this model simulates the time-dependent changeability character of the fault-tolerant field of human brain's associative memory. On the other hand, fault-tolerant fields of the memory samples of the model can be controlled, and we can design proper fault-tolerant fields for memory samples at different time according to the essentiality of memory samples. Moreover, the model has realized the nonlinear association of infinite value pattern from n dimension space to m dimension space. And the fault-tolerant fields of the memory samples are full of the whole real space R-n. The simulation shows that the model has the above characters and the speed of associative memory about the model is faster.

The design algorithm of an associative memory neural network

A design algorithm of an associative memory neural network is proposed. The benefit of this design algorithm is to make the designed associative memory model can implement the hoped situation. On the one hand, the designed model has realized the nonlinear association of infinite value pattern from n dimension space to m dimension space. The result has improved the ones of some old associative memory neural network. On the other hand, the memory samples are in the centers of the fault-tolerant. In average significance the radius of the memory sample fault-tolerant field is maximum.

Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer

We report on stacking fault (SF) detection in free-standing cubic-SiC epilayer by the Raman measurements. The epilayer with enhanced SFs is heteroepitaxially grown by low pressure chemical vapour deposition on a Si(100) substrate and is released in KOH solution by micromechanical manufacture, on which the Raman measurements are performed in a back scattering geometry. The TO line of the Raman spectra is considerably broadened and distorted. We discuss the influence of SFs on the intensity profiles of TO mode by comparing our experimental data with the simulated results based on the Raman bond polarizability (BP) model in the framework of linear-chain concept. Good agreement with respect to the linewidth and disorder-induced peak shift is found by assuming the mean distance of the SFs to be 11 angstrom in the BP model.

Ion bombardment as the initial stage of diamond film growth

It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.

Dissociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001)

A dissociated screw dislocation parallel to the interface was found in the epitaxial layer of the Ge0.17Si0.83 Si(001) system. It is shown that this dissociated screw dislocation which consists of two 30 degrees partials can relieve misfit strain energy, and the relieved misfit energy is proportional to the width of the stacking fault between the two partials.

Tectonic geomorphology of the Ryukyu Trench-Arc-Backarc System: geological-geophysical exploration and mapping

OKINAWA TROUGH; BASIN

The polymorphism of lysozyme gene in Zhikong scallop (Chlamys farreri) and its association with susceptibility/resistance to Listonella anguillarum

Lysozyme functions as a crucial biodefence effector against the infection of bacterial pathogens in innate immunity. The nucleotide sequence polymorphisms in promoter region of a nuclear goose type lysozyme gene from Zhikong scallop Chlamys farreri (designated as CFLysG) were investigated to explore their association with susceptibility/resistance to Listonella anguillarum infection. Eight sites of single nucleotide polymorphisms (SNPs) and two sites of insert-deletion (ins-del) polymorphisms were identified in the promoter region of CFLysG. Two of them, -753 TATCTCGATCAGG ins-del polymorphism and -391 A-G SNP were selected to analyze their distribution in the susceptible and resistant stocks, which were identified according to the survival time after L. anguillarum challenge. Using polymerase chain reaction-restriction fragment length polymorphism (PCR-RFLP), two genotypes were found at each site, which were ins/del and ins/ins at locus -753, and A/A and A/G at locus -391, respectively. The -753 ins/del genotype was more prevalent in the resistant stock than that in the susceptible stock, 30% vs 16.67% in frequency, but there was no significant difference in the frequency distribution between these two stocks (P=0.15). In contrast, the frequency of -391A/G genotype in the resistant stock was significantly higher (30%) than that in the susceptible stock (7.14%) (P=0.007), indicating a significant association with the resistance of Zhikong scallop to L anguillarum. To confirm the presumption, another independent challenge experiment was performed, in which the cumulative mortality of scallops with -391 A/A genotype (96.8%) was significantly higher than those with -391 A/G genotype (64.5%) (P=0.001), which further validate the association between -391 A/G genotype and the resistance of Zhikong scallop to L anguillarum. These results suggested that the -391 A/G could be a potential marker applied in future selection of Zhikong scallop with enhanced resistance to L anguillarum. (C) 2008 Elsevier Ltd. All rights reserved.

Features of Late Cenozoic Deepwater Sedimentation in Southern Qiongdongnan Basin, Northwestern South China Sea

Based on high resolution 2D and 3D seismic data acquired in recent years, using sequence stratigraphy analysis and geophysical methods, we discuss the features of Late Cenozoic deepwater sedimentation in the southern Qiongdongnan (sic) basin. The study area entered a bathyal slope environment in the Miocene. The channel developed in the Sanya (sic) Formation was controlled by a fault break, and its shingled seismic characteristics represent multiple erosion and fill, which may indicate that turbidite current developed in the slope environment. The polygon faults found in mudstone of the Meishan (sic) Formation represent the deepwater hungry sedimentary environment. The large-scale channels developed on the top of Huangliu (sic) Formation could be the result of a big sea level drop and an increase of sediment supply. The fantastic turbidite channel developed in Late Quaternary in the slope environment has "fan-like" body and long frontal tiny avulsion channel. The analysis of these features suggests that the sediment supply of the study area in the post-rifting period was dominant from the Vietnam uplift in the southwest. These deepwater sedimentary features could be potential reservoirs or migration pathways for deepwater petroleum systems.

Characteristics and Formation Mechanism of Polygonal Faults in Qiongdongnan Basin, Northern South China Sea

Based on high-resolution 3D seismic data, we document the polygonal faults within the Miocene Meishan (sic) Formation and Huangliu (sic) Formation of the Qiongdongnan (sic) basin, northern South China Sea. Within the seismic section and time coherent slice, densely distributed extensional faults with small throw and polygonal shape were identified in map view. The orientation of the polygonal faults is almost isotropic, indicating a non-tectonic origin. The deformation is clearly layer-bounded, with horizontal extension of 11.2% to 16%, and 13.2% on average. The distribution of polygonal faults shows a negative correlation with that of gas chimneys. The development of polygonal faults may be triggered by over-pressure pore fluid which is restricted in the fine-grained sediments of bathyal facies when the sediments is compacted by the burden above. The polygonal faults developed to balance the volumetric contraction and restricted extension. The product of hydrocarbon in the Meishan Formation may have contributed to the development of the polygonal faults. In the study area, it was thought that the petroleum system of the Neogene post-rift sequence is disadvantageous because of poor migration pathway. However, the discovery of polygonal faults in the Miocene strata, which may play an important role on the fluid migration, may change this view. A new model of the petroleum system for the study area is proposed.

Seismic stratigraphy of the Qiongdongnan deep sea channel system, northwest South China Sea

Based on more than 4000 km 2D seismic data and seismic stratigraphic analysis, we discussed the extent and formation mechanism of the Qiongdongnan deep sea channel. The Qiongdongnan deep sea channel is a large incised channel which extends from the east boundary of the Yinggehai Basin, through the whole Qiongdongnan and the Xisha trough, and terminates in the western part of the northwest subbasin of South China Sea. It is more than 570 km long and 4-8 km wide. The chaotic (or continuous) middle (or high) amplitude, middle (or high) continuity seismic facies of the channel reflect the different lithological distribution of the channel. The channel formed as a complex result of global sea level drop during early Pliocene, large scale of sediment supply to the Yinggehai Basin, inversion event of the Red River strike-slip fault, and tilted direction of the Qiongdongnan Basin. The large scale of sediment supply from Red River caused the shelf break of the Yinggehai Basin to move torwards the S and SE direction and developed large scale of prograding wedge from the Miocene, and the inversion of the Red River strike-slip fault induced the sediment slump which formed the Qiongdongnan deep sea channel.