Orbital ordering in Cs2AgF4 from first principles

First-principles calculations using the augmented plane wave plus local orbital method, as implemented in the WIEN2K code, have been used to investigate the structural, electronic, and magnetic properties of the layered perovskite Cs2AgF4. Our calculations indicate that an orthorhombic ground state for Cs2AgF4 is energetically favored over tetragonal. We also find that Cs2AgF4 should be a strong two-dimensional ferromagnet, with very weak antiferromagnetic coupling between the layers, in agreement with the experiment. More importantly, an antiferrodistortive ordering of z(2)-x(2) and z(2)-y(2) orbitals is inferred from the density of states and from a spin density isosurface analysis.

Experimental Study on Dynamic Properties of High Strength Fiber Clusters

In this paper, the dynamic behaviors of several kinds of high strength fibers, including Kevlar, UHMPE, glass fibers, carbon fibers etc., are investigated experimentally, with a Split Hopkinson Tension Bar (SHTB). The effect of strain rate on the modulus, strength, failure strain and failure characteristics of fibers, under impact loading, is analyzed with the relative stress vs. strain curves. At the same time, the mechanism about the rate dependence of mechanical behaviors of various fibers is discussed based on the understanding on the microstructures and deformation models of materials. Some comments are also presented on the decentralization of experimental results, and a new method called traveling wave method is presented to increase the experimental accuracy. Research results obtained in this paper will benefit to understand the energy absorption and to build up the constitutive law of protective materials reinforced by high strength fibers.

The Propagation Characteristics of Microwave in a Non-Equilibrium Plasma Layer

The influence of non-equilibrium plasma layer pressure and thickness on the transmission of microwave is considered when the incidence of wave is at an arbitrary angle. The plasma is cold, weakly ionized, and steady-state. It is assumed that it is a layered media with a kind of distribution of electron number density and the microwave is a plane wave. The results show that the pressure of plasma affects the absorption of microwave deeply, and the thickness relatively weakly in a non-equilibrium plasma slab.

体全息光栅透镜的设计和应用

设计了一种新型的体全息光栅透镜，在一块光学平板(体全息记录材料)内可以将输入光束产生横向传输并聚焦，或对输入光点产生横传的准直．它由一束平面波和一束球面波正交入射到光学平板上干涉形成的．研究了该体全息透镜的光栅间距变化情况，为设计和制备体全息光栅透镜及相关器件提供了理论依据．基于两光束耦合波理论，得到了该光栅透镜的耦合波方程，近似计算了该透镜的衍射效率及其达到高衍射效率时透镜的最佳尺寸．最后，讨论了该透镜在集成光学等领域中的应用．

Analysis of lateral-spread photorefractive planar lenses

The photorefractive planar lens for converting a vertical incident plane wave to a lateral-spread spherical wave and vice versa, is suggested. Using the two-beam coupled-wave theory, the coupled wave equations are derived and their half-analytical solutions are also given in terms of an infinite series. The diffraction properties (beam profiles, diffraction efficiency) of the local volume grating in the lens are presented. And the focusing property of the lens is discussed and compared with that of an ideal convergent spherical wave. It is demonstrated that the suggested photorefractive planar lens shows a good focusing effect. (c) 2004 Elsevier GmbH. All rights reserved.

Anisotropic Bragg diffraction of finite-sized volume holographic grating in photorefractive crystals

Anisotropic diffraction of uniform plane wave by finite-sized volume holographic grating in photorefractive crystals is considered. It is found that the anisotropic diffraction can take place when some special conditions are satisfied. The diffracted image is obtained in experiment for the anisotropic Bragg diffraction in Fe:LiNbO3 crystals. A coupled wave analysis is presented to study the properties of anisotropic diffraction. An analytical integral solution for the amplitudes of the diffracted beams is submitted. A trade off between high diffraction efficiency and the deterioration of reconstruction fidelity is analyzed. Numerical evaluations also show that the finite-sized anisotropic volume grating exhibits strong angular and wavelength selectivity. All the results are useful for the optimizing design of VHOE based on finite-sized volume grating structures. (c) 2006 Elsevier GmbH. All rights reserved.

Design of super-resolution filters with a Gaussian beam in optical data storage systems

Super-resolution filters based on a Gaussian beam are proposed to reduce the focusing spot in optical data storage systems. Both of amplitude filters and pure-phase filters are designed respectively to gain the desired intensity distributions. Their performances are analysed and compared with those based on plane wave in detail. The energy utilizations are presented. The simulation results show that our designed super-resolution filters are favourable for use in optical data storage systems in terms of performance and energy utilization.

Donor-donor binding in In2O3: Engineering shallow donor levels

Using first-principles band structure methods, we investigate the interactions between different donors in In2O3. Through the formation energy and transition energy level calculations, we find that an oxygen-vacancy creates a deep donor level, while an indium-interstitial or a tin-dopant induces a shallow donor level. The coupling between these donor levels gives rise to even shallower donor levels and leads to a significant reduction in their formation energies. Based on the analysis of the PBE0-corrected band structure and the molecular-orbital bonding diagram, we demonstrate these effects of donor-donor binding. In addition, total energy calculations show that these defect pairs tend to be more stable with respect to the isolated defects due to their negative binding energies. Thus, we may design shallow donor levels to enhance the electrical conductivity via the donor donor binding.

Origins of magnetism in transition metal doped Cul

Cupric iodide is a p-type semiconductor and has a large band gap. Doping of Mn, Co, and Ni are found to make gamma-CuI ferromagnetic ground state, while Cr-doped and Fe-doped CuI systems are stabilized in antiferromagnetic configurations. The origins of the magnetic ordering are demonstrated successfully by the phenomenological band coupling model based on d-d level repulsions between the dopant ions. Furthermore, using a molecular-orbital bonding model, the electronic structures of the doped CuI are well understood. According to Heisenberg model, high-T-C may be expected for CuI:Mn and CuI:Ni if there are no native defects or other impurities.

First-principles study of p-type transparent conductive oxides CuXO2 (X=Y, Sc, and Al)

Using first-principles methods we have calculated electronic structures, optical properties, and hole conductivities of CuXO2 (X=Y, Sc, and Al). We show that the direct optical band gaps of CuYO2 and CuScO2 are approximately equal to their fundamental band gaps and the conduction bands of them are localized. The direct optical band gaps of CuXO2 (X=Y, Sc, and Al) are 3.3, 3.6, and 3.2 eV, respectively, which are consistent with experimental values of 3.5, 3.7, and 3.5 eV. We find that the hole mobility along long lattice c is higher than that along other directions through calculating effective masses of the three oxides. By analyzing band offset we find that CuScO2 has the highest valence band maximum (VBM) among CuXO2 (X=Y, Sc, and Al). In addition, the approximate transitivity of band offset suggests that CuScO2 has a higher VBM than CuGaO2 and CuInO2 [Phys. Rev. Lett. 88, 066405 (2002)]. We conclude that CuScO2 has a higher p-type doping ability in terms of the doping limit rule. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2991157]

Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2

InGaN/GaN multi-quantum-well blue (461 +/- 4 nm) light emitting diodes with higher electroluminescence intensity are obtained by postgrowth thermal annealing at 720 C in O-2-ambient. Based on our first-principle total-energy calculations, we conclude that besides dissociating the Mg-H complex by forming H2O, annealing in O-2 has another positive effect on the activation of acceptor Mg in GaN. Mg can be further activated by the formation of an impurity band above the valence band maximum of host GaN from the passivated Mg-Ga-O-N complex. Our calculated ionization energy for acceptor Mg in the passivated system is about 30 meV shallower than that in pure GaN, in good agreement with previous experimental measurement. Our model can explain that the enhanced electroluminescence intensity of InGaN/GaN MQWs based on Mg-doped p-type GaN is due to a decrease in the ionization energy of Mg acceptor with the presence of oxygen. (C) 2008 American Institute of Physics.

Electronic states of InAs/GaAs tyre-shape quantum ring

In the framework of the effective mass theory, this paper calculates the electron energy levels of an InAs/GaAs tyre-shape quantum ring (TSQR) by using the plane wave basis. The results show that the electron energy levels are sensitively dependent on the TSQR's section thickness d, and insensitively dependent on TSQR's section inner radius R-1 and TSQR's inner radius R-2. The model and results provide useful information for the design and fabrication of InAs/GaAs TSQRs.

First-principles study of defects in CuGaO2

Using the first-principles methods, we study the electronic structure, intrinsic and extrinsic defects doping in transparent conducting oxides CuGaO2. Intrinsic defects, acceptor-type and donor-type extrinsic defects in their relevant charge state are considered. The calculation result show that copper vacancy and oxygen interstitial are the relevant defects in CuGaO2. In addition, copper vacancy is the most efficient acceptor. Substituting Be for Ga is the prominent acceptor, and substituting Ca for Cu is the prominent donors in CuGaO2. Our calculation results are expected to be a guide for preparing n-type and p-type materials in CuGaO2.

Mg acceptor energy levels in AlxInyGa1-x-yN quaternary alloys: An approach to overcome the p-type doping bottleneck in nitrides

The Mg-Ga acceptor energy levels in GaN and random Al8In4Ga20N32 quaternary alloys are calculated using the first-principles band-structure method. We show that due to wave function localization, the MgGa acceptor energy level in the alloy is significantly lower than that of GaN, although the two materials have nearly identical band gaps. Our study demonstrates that forming AlxInyGa1-x-yN quaternary alloys can be a useful approach to lower acceptor ionization energy in the nitrides and thus provides an approach to overcome the p-type doping difficulty in the nitride system.

A ministop band in a single-defect photonic crystal waveguide based on silicon on insulator

This paper reports that a two-dimensional single-defect photonic crystal waveguide in the F-K direction with triangular lattice on a silicon-on-insulator substrate is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. A ministop band (MSB) is observed by the measurement of transmission characteristics. It results from the coupling between the two modes with the same symmetry, which is analysed from the stimulated band diagram by the effective index and the two-dimensional plane wave expansion methods. The parameter working on the MSB is the ratio of the radius of air holes to the lattice constant, r/a. It is obtained that the critical r/a value determining the occurrence or disappearance of MSB is 0.36. When r/a is larger than or equal to 0.36, the MSB occurs. However, when r/a is smaller than 0.36, the MSB disappears.