Spin-polarized transport in one-dimensional waveguide structures with spatially periodic electric fields

We investigate theoretically spin-polarized transport in a one-dimensional waveguide structure under spatially periodic electric fields. Strong spin-polarized current can be obtained by tuning the external electric fields. It is interesting to find that the spin-dependent transmissions exhibit gaps at various electron momenta and/or gate lengths, and the gap width increases with increasing the strength of the Rashba effect. The strong spin-polarized current arises from the different transmission gaps of the spin-up and spin-down electrons. (c) 2006 American Institute of Physics.

Spin-polarized transport in one-dimensional waveguide structures with spatially-periodic electronic and magnetic fields

We investigate theoretically the spin-polarized transport in one-dimensional waveguide structure with spatially-periodic electronic and magnetic fields. The interplay of the spin-orbit interaction and in-plane magnetic field significantly modifies the spin-dependent transmission and the spin polarization. The in-plane magnetic fields increase the strength of the Rashba spin-orbit coupling effect for the electric fields along y axis and decrease this effect for reversing the electric fields, even counteract the Rashba spin-orbit coupling effect. It is very interesting to find that we may deduce the strength of the Rashba effect through this phenomenon. (c) 2005 Elsevier Ltd. All rights reserved.

Deep centers investigations of P-HEMT functional materials of ultra-high-speed microstructures grown by MBE

The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functional materials of ultra-high-speed microstructures grown by MBE are investigated using deep level transient spectroscopy (DLTS) technique. DLTS spectra demonstrate that midgap states, having larger concentrations and capture cross sections, are measured in n-AlGaAs layers of HEMT and P-HEMT structures. These states may correlate strongly with oxygen content of n-AlGaAs layer. At the same time, one can observe that the movement of DX center is related to silicon impurity that is induced by the strain in AlGaAs layer of the mismatched AlGaAs/InGaAs/GaAs system of P-HEMT structure. The experimental results also show that DLTS technique may be a tool of optimization design of the practical devices.

Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition

Undoped hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared at low temperature by hot wire chemical vapor deposition (HWCVD). Microstructures of the mu c-Si:H films with different H-2/SiH4 ratios and deposition pressures have been characterized by infrared spectroscopy X-ray diffraction (XRD), Raman scattering, Fourier transform (FTIR), cross-sectional transmission electron microscopy (TEM) and small angle X-ray scattering (SAX). The crystallization of silicon thin film was enhanced by hydrogen dilution and deposition pressure. The TEM result shows the columnar growth of mu c-Si:H thin films. An initial microcrystalline Si layer on the glass substrate, instead of the amorphous layer commonly observed in plasma enhanced chemical vapor deposition (PECVD), was observed from TEM and backside incident Raman spectra. The SAXS data indicate an enhancement of the mass density of mu c-Si:H films by hydrogen dilution. Finally, combining the FTIR data with the SAXS experiment suggests that the Si--H bonds in mu c-Si:H and in polycrystalline Si thin films are located at the grain boundaries. (C) 2000 Elsevier Science S.A. All rights reserved.

MULTIPLE PERIODIC SOLUTIONS OF ASYMPTOTICALLY LINEAR HAMILTONIAN SYSTEMS VIA CONLEY INDEX THEORY

In this paper we study the existence of periodic solutions of asymptotically linear Hamiltonian systems which may not satisfy the Palais-Smale condition. By using the Conley index theory and the Galerkin approximation methods, we establish the existence of at least two nontrivial periodic solutions for the corresponding systems.

Periodic bubble emission and appearance of an ordered bubble sequence (train) during condensation in a single microchannel

Condensation of steam in a single microchannel, silicon test section was investigated visually at low flow rates. The microchannel was rectangular in cross-section with a depth of 30 pm, a width of 800 mu m and a length of 5.0 mm, covered with a Pyrex glass to allow for visualization of the bubble formation process. By varying the cooling rate during condensation of the saturated water vapor, it was possible to control the shape, size and frequency of the bubbles formed. At low cooling rates using only natural air convection from the ambient environment, the flow pattern in the microchannel consisted of a nearly stable elongated bubble attached upstream (near the inlet) that pinched off into a train of elliptical bubbles downstream of the elongated bubble. It was observed that these elliptical bubbles were emitted periodically from the tip of the elongated bubble at a high frequency, with smaller size than the channel width. The shape of the emitted bubbles underwent modifications shortly after their generation until finally becoming a stable vertical ellipse, maintaining its shape and size as it flowed downstream at a constant speed. These periodically emitted elliptical bubbles thus formed an ordered bubble sequence (train). At higher cooling rates using chilled water in a copper heat sink attached to the test section, the bubble formation frequency increased significantly while the bubble size decreased, all the while forming a perfect bubble train flowing downstream of the microchannel. The emitted bubbles in this case immediately formed into a circular shape without any further modification after their separation from the elongated bubble upstream. The present study suggests that a method for controlling the size and generation frequency of microbubbles could be so developed, which may be of interest for microfluidic applications. The breakup of the elongated bubble is caused by the large Weber number at the tip of the elongated bubble induced by the maximum vapor velocity at the centerline of the microchannel inside the elongated bubble and the smaller surface tension force of water at the tip of the elongated bubble.

RESONANT TUNNELING, EIGENVALUE AND ENERGY-BAND CALCULATION FOR POTENTIAL AND PERIODIC POTENTIAL STRUCTURES

Recursion formulae for the reflection and the transmission probability amplitudes and the eigenvalue equation for multistep potential structures are derived. Using the recursion relations, a dispersion equation for periodic potential structures is presented. Some numerical results for the transmission probability of a double barrier structure with scattering centers, the lifetime of the quasi-bound state in a single quantum well with an applied field, and the miniband of a periodic potential structure are presented.

Theoretical and experimental investigations of flexural wave propagation in periodic grid structures designed with the idea of phononic crystals

The propagation characteristics of fiexural waves in periodic grid structures designed with the idea of phononic crystals are investigated by combining the Bloch theorem with the finite element method. This combined analysis yields phase constant surfaces, which predict the location and the extension of band gaps, as well as the directions and the regions of wave propagation at assigned frequencies. The predictions are validated by computation and experimental analysis of the harmonic responses of a finite structure with 11 × 11 unit cells. The fiexural wave is localized at the point of excitation in band gaps, while the directional behaviour occurs at particular frequencies in pass bands. These studies provide guidelines to designing periodic structures for vibration attenuation.

Laterally Electrostatically Driven Poly 3C-SiC Folded-Beam Resonant Microstructures

Micromachined comb-drive electrostatic resonators with folded-cantilever beams were designed and fabricated. A combination of Rayleigh＇s method and finite-element analysis was used to calculate the resonant frequency drift as we adjusted the device geometry and material parameters. Three micromachined lateral resonant resonators with different beam widths were fabricated. Their resonant frequencies were experimentally measured to be 64.5,147.2, and 255.5kHz, respectively, which are in good agreement with the simulated resonant frequency. It is shown that an improved frequency performance could be obtained on the poly 3C-SiC based device structural material systems with high Young＇s modulus.