Characteristics of high reflection mirror with an SiO2 top layer for multilayer dielectric grating

The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

Telemetric recordings of single neuron activity and visual scenes in monkeys walking in an open field

This paper describes a portable recording system and methods for obtaining chronic recordings of single units and tracking rhesus monkey behavior in an open field. The integrated system consists of four major components: (1) microelectrode assembly; (2) h

Increasing top-down suppression from prefrontal cortex facilitates tactile working memory

Navigated transcranial magnetic stimulation (TMS) combined with diffusion-weighted magnetic resonance imaging (DW-MRI) and tractography allows investigating functional anatomy of the human brain with high precision. Here we demonstrate that working memory (WM) processing of tactile temporal information is facilitated by delivering a single TMS pulse to the middle frontal gyrus (MFG) during memory maintenance. Facilitation was obtained only with a TMS pulse applied to a location of the MFG with anatomical connectivity to the primary somatosensory cortex (S1). TMS improved tactile WM also when distractive tactile stimuli interfered with memory maintenance. Moreover, TMS to the same MFG site attenuated somatosensory evoked responses (SEPs). The results suggest that the TMS-induced memory improvement is explained by increased top-down suppression of interfering sensory processing in S1 via the MFG-S1 link. These results demonstrate an anatomical and functional network that is involved in maintenance of tactile temporal WM. (C) 2009 Elsevier Inc. All rights reserved.

淡水生态系统中的TOP-DOWN效应与生物多样性保护

淡水生态系统中高营养级类群可以对低营养级类群产生强烈的影响，最终导致整个生态环境的改变，这一现象被称作下行（ｔｏｐｄｏｗｎ）效应。本文对ｔｏｐｄｏｗｎ的含义特别是鱼类所产生ｔｏｐｄｏｗｎ效应的结果进行了阐述，提出了ｔｏｐｄｏｗｎ效应还表现在当原来生态系统中的高营养级类群缺少时，也会造成生态系统结构与功能发生变化的观点。最后，根据淡水生态系统ｔｏｐｄｏｗｎ效应的特点，认为在淡水生态系统的生物多样性保护中，应注意高营养级类群的保护和谨慎地对待引种问题

Sonar gain control in echolocating finless porpoises (Neophocaena phocaenoides) in an open water (L)

Source levels of echolocating free-ranging Yangtze finless porpoise (Neophocaena phocaenoides asiaeorientalis) were calculated using a range estimated by measuring the time delays of the signals via the surface and bottom reflection paths to the hydrophone, relative to the direct signal. Peak-to-peak source levels for finless porpoise were from 163.7 to 185.6 dB re:1 mu Pa. The source levels are highly range dependent and varied approximately as a function of the one-way transmission loss for signals traveling from the animals to the hydrophone. (c) 2006 Acoustical Society of America.

Efficiency of constructed wetlands in decontamination of water polluted by heavy metals

A twin-shaped constructed wetland (CW) comprising a vertical flow (inflow) chamber with Cyperus alternifolius followed by a reverse-vertical flow (outflow) chamber with Villarsia exaltata was assessed for decontamination of artificial wastewater polluted by heavy metals. After application of Cd, Cu, Pb, Zn over 150 days, together with Al and Mn during the final 114 days, no heavy metals with the exception of Mn could be detected in either the drainage zone at the bottom, shared by both chambers, or in the effluent. The inflow chamber was, therefore, seen to be predominantly responsible for the decontamination process of more toxic metal species with final concentrations far below WHO drinking-water standards. About one-third of the applied Cu and Mn was absorbed, predominantly by lateral roots of C. alternifolius. Lower accumulation levels were observed for Zn (5%), Cd (6%), Al (13%). and Pb (14%). Contents of Cd, Cu, Mn, and Zn in soil were highest in top layer, while Al and Pb were evenly distributed through the whole soil column. Metal species accumulating mainly in the top layer can be removed mechanically. A vertical flow CW with C. alternifolius is an effective tool in phytoremediation for treatment of water polluted with heavy metals. (C) 2002 Elsevier Science B.V. All rights reserved.

Photonic crystal distributed feedback quantum cascade laser fabricated with holographic technique

Electrically pumped, edge-emitting, singlemode operation of a two-dimensional photonic crystal distributed feedback (PCDFB) quantum cascade laser emitting at similar to 7.8 mu m is demonstrated. The two-beam holographic technique combined with wet-etching process is successfully used to de. ne a square-lattice PCDFB structure on the top grating layer of the laser. This simple PC fabrication method may open exciting opportunities for the wide application of PCDFB lasers.

A Si-based tunable narrow-band flat-top filter with multiple-step-type Fabry-Perot cavity structure

In the optical network, the quick and accurate alignment with wavelength is an important issue during the channel detection. At this point, a filter having flat-top response characteristic is an effective solution. Based on multiple-step-type Fabry-Perot cavity structure, a novel all-Si-based thermooptical tunable flat-top filter with narrow-band has been fabricated, using our patent silicon-on-reflector bonding technology. The device demonstrated a 1-dB flat-top width of 1 nm, 3-dB band of 3 nm, free spectra range of 8 nm, and the tuning range of 4.6 nm was obtained under the applied voltage of 4 V.

Effect of the technology of implanting nitrogen into buried oxide on the radiation hardness of the top gate oxide for partially depleted SOIPMOSFET

The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen implantation doses (8 x 10(15), 2 x 10(16) and 1 x 10(17) cm(-2)) for partially depleted SOI PMOSFET. The experimental results reveal the trend of negative shift of the threshold voltages of the studied transistors with the increase of nitrogen implantation dose before irradiation. After the irradiation with a total dose of 5 x 10(5) rad(Si) under a positive gate voltage of 2V, the threshold voltage shift of the transistors corresponding to the nitrogen implantation dose 8 x 10(15) cm(-2) is smaller than that of the transistors without implantation. However, when the implantation dose reaches 2 x 10(16) and 1 x 10(17) cm(-2), for the majority of the tested transistors, their top gate oxide was badly damaged due to irradiation. In addition, the radiation also causes damage to the body-drain junctions of the transistors with the gate oxide damaged. All the results can be interpreted by tracing back to the nitrogen implantation damage to the crystal lattices in the top silicon.

Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition

The GaN film was grown on the (111) silicon-on-insulator (SOI) substrate by metal-organic chemical vapor deposition and then annealed in the deposition chamber. A multiple beam optical stress sensor was used for the in-situ stress measurement, and X-ray diffraction (XRD) and Raman spectroscopy were used for the characterization of GaN film. Comparing the characterization results of the GaN films on the bulk silicon and SOI substrates, we can see that the Raman spectra show the 3.0 cm(-1) frequency shift of E-2(TO), and the full width at half maximum of XRD rocking curves for GaN (0002) decrease from 954 arc see to 472 are sec. The results show that the SOI substrates can reduce the tensile stress in the GaN film and improve the crystalline quality. The annealing process is helpful for the stress reduction of the GaN film. The SOI substrate with the thin top silicon film is more effective than the thick top silicon film SOI substrate for the stress reduction. (C) 2007 Elsevier B.V. All rights reserved.

Flat-top arrayed waveguide grating using a tapered multimode interferometer

A 40-channel 0.8-nm-spaced flat-top silica-based arrayed waveguide grating (AWG) with a tapered multimode interferometer (MMI) at the end of its input waveguide has been experimentally demonstrated for the first time. By adding the MMI, the 1-dB and 3-dB bandwidths are increased to 0.45 and 0.62 nm, respectively. The insertion loss (IS) of the device ranges from 3.8 to 6.8 dB. The IS uniformity is better than 3.0 dB. The crosstalk is better than -25 dB. Compared to the AWG with a rectangular MMI, the AWG with a tapered MMI shows better IS, crosstalk, and ripple. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Quantum transport from the perspective of quantum open systems

By viewing the non-equilibrium transport setup as a quantum open system, we propose a reduced-density-matrix based quantum transport formalism. At the level of self-consistent Born approximation, it can precisely account for the correlation between tunneling and the system internal many-body interaction, leading to certain novel behavior such as the non-equilibrium Kondo effect. It also opens a new way to construct time-dependent density functional theory for transport through large-scale complex systems. (c) 2006 Elsevier B.V. All rights reserved.

Field-aided collection in GaInP2 top solar cells

This paper reports the study on a field-aided collection in p-on-n GaInP2 top cells. The cells were produced by metalorganic vapor phase epitaxy at a low gas pressure. In order to optimize the device configuration, numerical simulations have been performed for the impacts of field-aided collection on the performance of the top cells. On the basis of the modeling results, a modified p(+)-p(-)-n(-)-n(+) configuration is introduced for GaInP2 top cells. This modification has brought out improved photovoltaic performance of the top cells, with conversion efficiency EFF = 14.26% (AM0, 2 x 2 cm(2), 25degreesC). (C) 2003 Elsevier B.V. All rights reserved.