Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Thermal stress wave and spallation induced by an electron beam

Thermal stress wave and spallation in aluminium alloy exposed to a high fluency and low energy electron beams are studied theoretically. A simple model for the study of energy deposition of electrons in materials is presented on the basis of some empirical formulae. Under the stress wave induced by energy deposition, microcracks and/or microvoids may appear in target materials, and in this case, the inelastic volume deformation should not vanish. The viscoplastic model proposed by Bodner and Partom with corresponding Gurson's yield function requires modification for this situation. The new constitutive model contains a scalar field variable description of the material damage which is taken as the void volume fraction of the polycrystalline material. Incorporation of the damage parameter permits description of rate-dependent, compressible, inelastic deformation and ductile fracture. The melting phenomenon has been observed in the experiment, therefore one needs to take into account the melting process in the intermediate energy deposition range. A three-phase equation of state used in the paper provides a more detailed and thermodynamical description of metals, particularly, in the melting region. The computational results based on the suggested model are compared with the experimental test for aluminium alloy, which is subjected to a pulsed electron beam with high fluency and low energy. (C) 1997 Elsevier Science Ltd.

紧聚焦的超短超强激光脉冲在真空中加速斜入射的相对论电子

研究了紧聚焦的线偏振飞秒超强高斯激光脉冲俘获并剧烈加速斜入射低能相对论电子的效应，发现被俘获的电子在激光脉冲纵向有质动力的强大加速作用下，可以获得GeV量级的能量，并详细研究了入射电子的初能量、斜入射角、电子与激光脉冲的相对延迟时间和激光脉冲宽度等条件对电子能量增益的影响，发现当激光脉宽超过10λ时，脉宽对电子能量增益影响不大．

Influence of Coulomb potential for photoionization of H atoms in an elliptically polarized laser field: Velocity gauge versus length gauge

We theoretically study the influence of Coulomb potential for photoionization of hydrogen atoms in an intense laser field with elliptical polarization. The total ionization rates, photoelectron energy spectra, and photoelectron angular distributions are calculated with the Coulomb-Volkov wave functions in the velocity gauge and compared with those calculated in the length gauge as well as those calculated with the Volkov wave functions. By comparing the results obtained by the Coulomb-Volkov and Volkov wave functions, we find that for linear polarization the influence of Coulomb potential is obvious for low-energy photoelectrons, and as the photoelectron energy and/or the laser intensity increase, its influence becomes smaller. This trend, however, is not so clear for the case of elliptical polarization. We also find that the twofold symmetry in the photoelectron angular distributions for elliptical polarization is caused by the cooperation of Coulomb potential and interference of multiple transition channels. About the gauge issue, we show that the difference in the photoelectron angular distributions obtained by the velocity and length gauges becomes rather obvious for elliptical polarization, while the difference is generally smaller for linear polarization.

Effects on the proton production from explosions of hydrogen clusters subjected to intense femtosecond laser fields

The dependence of the maximum and average energies of protons, which were produced in the interaction of an intense laser pulse (similar to 1 x 10(16) W cm(-2), 65 fs) with hydrogen clusters in a gas jet backed up to 80 bar at liquid nitrogen temperature (similar to 80 K), on the backing pressure has been studied. The general trend of the proton energy dependence on the square of the average cluster radius, which is determined by a calibrated Rayleigh scattering measurement, is similar to that described by theory under the single size approximation. Calculations are made to fit the experimental results under a simplified model by taking into account both a log-normal cluster size distribution and the laser intensity attenuation in the interaction volume. A very good agreement between the experimental proton energy spectra and the calculations is obtained in the high- energy part of the proton energy distributions, but a discrepancy of the fits is revealed in the low-energy part at higher backing pressures which are associated with denser flows. A possible mechanism which would be responsible for this discrepancy is discussed. Finally, from the fits, a variation of the cluster size distributions was revealed to be dependent on the gas backing pressure as well as on the evolving time of the gas flow of clusters.

单块晶体集成的N×N纵横开关网络及其控制算法

设计了一种单块晶体集成的n×n纵横开关(Crossbar)网络。通过综合考虑晶体的双折射和全内双反射现象,以及晶体的电光效应,将构成n×n纵横开关网络的所有单元器件都集成到一块具有电光效应的双折射晶体上。同时,给出了该网络的控制算法,通过对开关工作状态的控制,可以实现任意输入输出通道之间的无阻塞连接。这种单块晶体集成的纵横开关网络具有能量损耗低、无阻塞、易安装、抗干扰等优点,适合于全光网络发展的需要。

Single crystal beta-Ga2O3: Cr grown by floating zone technique and its optical properties

beta-Ga2O3: Cr single crystals were grown by floating zone technique. Absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were obtained by the peak values of absorption spectra. The value 10Dq/B=23.14 manifests that in beta-Ga2O3 crystals Cr3+ ions are influenced by low energy crystal field. After high temperature annealing in air, the Cr3+ intrinsic emission was enhanced and the green luminescence disappeared. The strong and broad 691 nm emission was obtained at 420 nm excitation due to the electron transition occurred from T-4(2) to (4)A(2). The studies manifest that the beta-Ga2O3 crystals have the potential application for tunable laser.

应用离子后处理技术提高薄膜激光损伤阈值

利用电子束热蒸发方法在K9玻璃基底上沉积氧化锆薄膜,并对其中一些样品用低能O2^+进行了后处理.采用表面热透镜技术测量薄膜样品表面弱吸收,采用显微镜观察样品离子后处理前后的显微缺陷密度.测试结果表明:经离子后处理样品表面的缺陷密度从18.6/mm^2降低到6.2/mm^2,且其激光损伤阈值从15.9 J/cm^2提高到23.1 J/cm^2,样品的平均吸收率从处理前的1.147×10^-4降低到处理后的9.56×10^-5.通过对处理前后样品的表面微缺陷密度、吸收率及损伤形貌等的分析发现:离子后处理可以降

低能N+诱导拟南芥突变体DNA变异的研究

低能离子束的诱变效应首先由我国科学家发现并将其广泛应用于育种实践，但是离子注入诱导DNA变异的研究结果主要是以微生物离体质粒DNA为材料获得的，以活体高等生物为材料的研究尚未见报道。 我们以30 keV N+（注入剂量80×1015 ions/cm2）注入拟南芥后获得的稳定突变体T80II为实验材料，对突变体植株进行了RAPD标记，并将T80II和对照部分RAPD特异条带进行克隆测序和DNA序列分析。结果显示，在可分辨的总计397个RAPD条带中，T80II株系中有52个条带表现出差异，包括条带的缺失和增加，条带变异率为13.1%;克隆的T80II序列中，平均每16.8个碱基出现一个碱基变异位点，表现出较高频率的碱基突变。碱基突变的类型包括碱基的颠换、转换、缺失、插入等。在检测到的275个碱基突变中，主要是单碱基置换（97.09%），碱基缺失或者插入的比例较小（2.91%）。在碱基置换中，转换的频率（66.55%）高于颠换的频率（(30.55%)。此外，构成DNA的四种碱基均可以被离子束辐照诱发变异，而且每一种碱基都可以被其它三种碱基所替换，但是胸腺嘧啶（T）的辐射敏感性要高于其它三种碱基。通过分析突变碱基周边序列，对低能N+离子注入拟南芥突变体引发的碱基突变热点进行了讨论。 另外，低能离子注入诱变获得的突变体特异表达基因的克隆方面也没有报道。我们以突变体T80II作为实验材料，用PCR增效的减法杂交技术构建了T80II特异表达的cDNA减法文库，克隆特异表达的cDNA片段，并对其中1个与14-3-3 protein GF14 nu (GRF7) gene有部分同源性、长712 bp的cDNA片段进行了讨论。我们的研究证明通过减法杂交技术克隆低能离子诱发的突变体特异表达的cDNA是可能的，这为低能离子注入技术在分子生物学上的应用开辟了一个新思路。

Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition

Tensile-strained GaAsP/GaInP single quantum well (QW) laser diode (I-D) structures have been grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and related photoluminescence (PL) properties have been investigated in detail. The samples have the same well thickness of 16 nm but different P compositions in a GaAsP QW. Two peaks in room temperature (RT) PL spectra are observed for samples with a composition larger than 0.10. Temperature and excitation-power-dependent PL spectra have been measured for a sample with it P composition of 0.15. It is found that the two peaks have a 35 meV energy separation independent of temperature and only the low-energy peak exists below 85 K. Additionally, both peak intensities exhibit a monotonous increase as excitation power increases. Analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-hh). A theoretical calculation based oil model-solid theory, taking, into account the spin-orbit splitting energy, shows good agreement with our experimental results. The temperature dependence of PL intensity ratio is well explained using the spontaneous emission theory for e-hh and e-hh transitions. front which the ratio can be characterized mainly by the energy separation between the fill and Ill states.

Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation

InGaN/GAN multiple quantum wells grown by metal-organic chemical vapor deposition were irradiated with the electron beam from a low energy accelerator. The electron irradiation induced a redshift by 50 meV in the photoluminescence spectra of the electron-irradiated InGaN/GaN quantum wells, irrespective of the exposure time to the electron beam which ranges from 10 to 1000s. The localization parameter extracted from the temperature-dependent photoluminescence spectra was found to increase in the Irradiated samples. Analysis of the intensity of the longitudinal optical phonon sidebands showed the enhancement of the exciton-phonon coupling, indicating that the excitons are more strongly localized in the irradiated InGaN wells. The change in the pholotuminescence spectra. In the irradiated InGa/GAN quantum wells were explained in terms of the increase of indium concentration in indium rich clusters induced by the electron irradiation (C) 2009 The Japan Society of Applied Physics

First principle study of Mg, Si and Mn co-doped GaN

Calculations of electronic structures and optical properties of Mg (or Si) and Mn co-doped GaN were carried out by means of first-principle plane-wave pesudopotential (PWP) based on density functional theory - The spin polarized impurity bands of deep energy levels were found for both systems. They are half metallic and suitable for spin injectors. Compared with GaN Mn, GaN Mn-Mg exhibits a significant increase in T-C 1 while the 1.3 eV absorption peak in GaN Mn disappears due to addition of Mg. In addition, a strong absorption peak due to T-4(1) (F) -> T-4(2) (F) transition of Mn4+ were observed near 1.1 eV. Nevertheless, GaN Mn-Si failed to show increase of T-C, and the absorption peak was not observed at the low energy side.

Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells

We have investigated spin polarization-related localized exciton photoluminescence (PL) dynamics in GaInNAs quantum wells by time-resolved PL spectroscopy. The emission energy dependence of PL polarization decay time as well as polarization-independent PL decay time suggests that the acoustic phonon scattering in the process of localized exciton transfer from the high-energy localized states to the low-energy ones dominates the PL polarization relaxation. By increasing the excitation power from 1 to 10 mW, the PL polarization decay time is changed from 0.17 to more than 1 ns, which indicates the significant effect of the trapping of localized electrons by nonradiative recombination centers. These experimental findings indicate that the spin-related PL polarization in diluted nitride semiconductors can be manipulated through carrier scattering and recombination process. (C) 2009 The Japan Society of Applied Physics

Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Anomalous temperature dependence of photoluminescence from stoichiometric GD(2)O(3-x) film

A stoichiometric Gd2O3-x thin film has been grown on a silicon (10 0) substrate with a low-energy dual ion-beam epitaxial technique. Gd2O3-x shares Gd2O3 structures although there are many oxygen deficiencies in the film. The photoluminescence (PL) measurements have been performed in a temperature range 5-300 K. The detailed characters of the peak position, the full-width at half-maximum (FWHM) and the peak intensity at different temperature were reported. An anomalous intensity behavior of the PL spectra has been observed, which is similar to that of some other materials such as porous silicon and silicon nanocrystals in silicon dioxide. Therefore, we suggest that the nanoclusters with the oxygen deficiencies contribute to the PL emission and employ the model of singlet-triplet exchange splitting of exciton to discuss the four peaks observed in the experiment. (C) 2003 Elsevier B.V. All rights reserved.