A new expression of hardening coefficients for fcc-crystal and calibration of the material constants

In order to describe the effect of latent hardening on the macro-plastic behavior of foc-crystal, a new expression for hardening coefficient is proposed in which there are 12 material constants, each having clear physical meaning. And a method of material constant calibration is suggested and used to determine the material constants of copper and aluminum crystal. The simulated load-elongation curves along various crystallographic orientations are comparable with the experimental ones.

Influence of convections on dopant segregation in floating-zone crystal-growth system

The steady and axisymmetric crystal growth process of floating zone model was studied numerically to concern with the influence of convection and phase change on effective segregation. An iteration method of numerical simulation considering both thermocapillary and buoyancy effects for GaAs crystal growth gave the effective segregation coefficient, which was compared with the space experiment of GaAs on board the Chinese recoverable satellite. The calculated segregation coefficient of a two-dimensional model was found to be smaller than the one suggested by space experiment with the simplified assumption of an one-dimensional model.

Influence of low-gravity level on crystal-growth in floating-zone

The influence of low gravity level on crystal growth in the floating zone, which involves thermocapillary convection, phase change convection, thermal and solutal diffusion, is investigated numerically by a finite element method for the silicon crystal growth process. The velocity, temperature, concentration fields and phase change interfaces depending on heating temperature and growth rates are analyzed. The influence of low gravity level on the concentration is studied especially. The results show that the non-uniformities of concentration are about 10(-3) for growth rate nu(p) = 5.12 x 10(-8) m/s, 10(-2) for nu(p) = 5.12 x 10(-7) m/s and relatively larger for larger growth rate in the gravity level g = 0-9.8 m/s2. The thermocapillary effect is strong in comparison with the Bridgman system, and the level of low gravity is relatively insensitive for lower growth rates.

A study on stratification of concentration in crystal-growth of alpha-liio3 by holographic-interferometry

A new thermoplastic-photoconductor laser holographic recording system has been used for real-time and in situ observation of alpha-LiIO3 crystal growth. The influence of crystallization-driven convection on the concentration stratification in solution has been studied under gravity field. It is found that the stratification is closely related to the seed orientation of alpha-LiIO3 crystal. When the optical axis of crystal seed C is parallel to the gravity vector g, the velocity of the concentration stratification is two times larger than that in the case of C perpendicular-to g. It needs 40 h for the crystalline system of alpha-LiIO3 to reach stable concentration distribution (expressed as tau) at 47.6-degrees-C. The time tau is not sensitive to the seed orientation. Our results provide valuable data for designing the crystal growth experiments ia space.

Crystal-growth in floating zone with phase-change and thermosolutal convections

Floating zone crystal growth in microgravity environment is investigated numerically by a finite element method for semiconductor growth processing, which involves thermocapillary convection, phase change convection, thermal diffusion and solutal diffusion. The configurations of phase change interfaces and distributions of velocity, temperature and concentration fields are analyzed for typical conditions of pulling rates and segregation coefficients. The influence of phase change convection on the distribution of concentration is studied in detail. The results show that the thermocapillary convection plays an important role in mixing up the melt with dopant. The deformations of phase change interfaces by thermal convection-diffusion and pulling rods make larger variation of concentration field in comparison with the case of plane interfaces.

Preliminary-results of gaas single-crystal growth under high gravity conditions

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

3D Finite Volume Scheme for Czochralski Crystal Growth

A general three-dimensional model is developed for simulation of the growth process of silicon single crystals by Czochralski technique. The numerical scheme is based on the curvilinear non-orthogonal finite volume discretization. Numerical solutions show that the flow and temperature fields in the melt are asymmetric and unsteady for 8’’ silicon growth. The effects of rotation of crystal on the flow structure are studied. The rotation of crystal forms the Ekman layer in which the temperature gradient along solid/melt surface is small.

3D Finite Volume Scheme for Czochralski Single Crystal Growth

Czochralski (Cz) technique, which is used for growing single crystals, has dominated the production of single crystals for electronic applications. The Cz growth process involves multiple phases, moving interface and three-dimensional behavior. Much has been done to study these phenomena by means of numerical methods as well as experimental observations. A three-dimensional curvilinear finite volume based algorithm has been developed to model the Cz process. A body-fitted transformation based approach is adopted in conjunction with a multizone adaptive grid generation (MAGG) technique to accurately handle the three-dimensional problems of phase-change in irregular geometries with free and moving surfaces. The multizone adaptive model is used to perform a three-dimensional simulation of the Cz growth of silicon single crystals.Since the phase change interface are irregular in shape and they move in response to the solution, accurate treatment of these interfaces is important from numerical accuracy point of view. The multizone adaptive grid generation (MAGG) is the appropriate scheme for this purpose. Another challenge encountered is the moving and periodic boundary conditions, which is essential to the numerical solution of the governing equations. Special treatments are implemented to impose the periodic boundary condition in a particular direction and to determine the internal boundary position and shape varying with the combination of ambient physicochemical transport process and interfacial dynamics. As indicated above that the applications and processes characterized by multi-phase, moving interfaces and irregular shape render the associated physical phenomena three-dimensional and unsteady. Therefore a generalized 3D model rather than a 2D simulation, in which the governing equations are solved in a general non-orthogonal coordinate system, is constructed to describe and capture the features of the growth process. All this has been implemented and validated by using it to model the low pressure Cz growth of silicon. Accuracy of this scheme is demonstrated by agreement of simulation data with available experimental data. Using the quasi-steady state approximation, it is shown that the flow and temperature fields in the melt under certain operating conditions become asymmetric and unsteady even in the absence of extrinsic sources of asymmetry. Asymmetry in the flow and temperature fields, caused by high shear initiated phenomena, affects the interface shape in the azimuthal direction thus results in the thermal stress distribution in the vicinity, which has serious implications from crystal quality point of view.

CHARACTERIZATION OF SHEAR BANDS IN TWO BULK METALLIC GLASSES WITH DIFFERENT INHERENT PLASTICITY

Shear banding characterization of Zr64.13Cu15.75Ni10.12Al10 and Zr65Cu15Ni10Al10 bulk metallic glasses (BMGs) with significant difference in inherent plasticity and quite similar chemical composition was studied by depth sensitive macroindentaion tests with conical indenter. Well-developed shear band pattern can be found for both BMGs after indentation. Distinct difference in the shear band spacing, scale of plastic deformation region and the shear band branching in the two BMGs account for the different plasticity.

Characterization Of Shear Bands In Two Bulk Metallic Glasses With Different Inherent Plasticity

Shear banding characterization of Zr64.13Cu15.75Ni10.12Al10 and Zr65Cu15Ni10Al10 bulk metallic glasses (BMGs) with significant difference in inherent plasticity and quite similar chemical composition was studied by depth sensitive macroindentaion tests with conical indenter. Well-developed shear band pattern can be found for both BMGs after indentation. Distinct difference in the shear band spacing, scale of plastic deformation region and the shear band branching in the two BMGs account for the different plasticity.

Short-range-order effects on intrinsic plasticity of metallic glasses

Through a systematical analysis of the elastic moduli for 137 metallic glasses (MGs) and 56 polycrystalline metals, we use a simple model developed by Knuyt et al. [J. Phys. F: Met. Phys. 16 (1986) p.1989; Phil. Mag. B 64 (1991) p.299] based on a Gaussian distribution for the first-neighbor distance to reveal the short-range-order (SRO) structural conditions for plasticity of MGs. It is found that the SRO structure with dense atomic packing, large packing dispersion and a significant anharmonicity of atomic interaction within an MG is favorable for its global plasticity. Although these conditions seem paradoxical, their perfect matching is believed to be a key for designing large plastic bulk MGs not only in compression but also in tension.

Micro-scale Plasticity Mechanics=微尺度塑性力学

本书系统地介绍了材料微尺度力学行为的尺寸效应实验现象，重点介绍了几种代表性的微尺度应变梯度塑性理论及对微尺度实验现象的解释；以及对裂纹尖端微尺度范围内解理断裂的应用。融会贯通的介绍了国内外学者的原创性工作和创新性学术思想。 全书共8章。第1章介绍了应变梯度塑性理论的应用背景及经典微极理论；第2章介绍了金属材料典型的微尺度力学实验现象；第3～7章介绍了几种典型的应变梯度理论及其应用；第8章介绍了应变梯度理论在微观断裂力学中的应用。 本书适合从事固体微尺度力学、先进材料的微结构设计与力学性能优化、微机电和微电子元件力学行为研究的科技工作者及工程师使用和参考，也可供力学专业及材料专业的高年级本科生和研究生阅读参考。

Study On Buoyancy Convection Phenomenon In The Crystal Growth Process

Real-time phase shift Mach-Zehnder interference technique, imaging technique, and computer image processing technique were combined to perform a real-time diagnosis of NaClO3 crystal, which described both the dissolution process and the crystallization process of the NaClO3 crystal in real-time condition. The dissolution fringes and the growth fringes in the process were obtained. Moreover, a distribution of concentration field in this process was obtained by inversion calculation. Finally, the buoyancy convection phenomenon caused by gravity in the crystal growth process was analyzed. The results showed that this convection phenomenon directly influences the growth rate of each crystal face in the crystal.

Influence Of Gravity On Structure Of Colloidal Crystal Using Simulated Microgravity

Liquid mixtures of water and deuterium oxide as the liquid phase, were used to match the density of charged colloidal particles. Kossel diffraction method was used to detect the crystal structures. The experiments under the density-matched (g=0) and unmatched (g=1) conditions are compared to examine the influence of gravity on the crystal structures formed by self-assembly of 110 nm (in diameter) polystyrene microspheres. The result shows that die gravity tends to make the lattice constants of colloidal crystals smaller at lower positions, which indicates that the effect of gravity should be taken into account in the study of the colloidal crystals.

Influence Of Micro-Impurity On Protein Crystal Growth Studied By The Etch Figure Method

The investigation of the effect of micro impurity on crystal growth by optical microscopy has been validated. The results showed that the growth rate of a lysozyme crystal was affected even if the concentration of impurity of fluorescent-labeled lysozyme (abbreviation, F-lysozyme) was very small. Different concentrations of F-lysozyme had different effects on crystal growth rate. The growth rate decreased much more as F-lysozyme concentration increased. The density of incorporated F-lysozyme on different grown layers of a lysozyme crystal during crystal growth was obtained from the results of flat-bottomed etch pits density. (C) 2008 Elsevier B.V. All rights reserved.