Cyclin A2 is differentially expressed during oocyte maturation between gynogenetic silver crucian carp and gonochoristic color crucian carp

Silver crucian carp (Carassius auratus gibelio) is a unique gynogenetic fish. Because of its specific genetic background and reproduction mode, it is an intriguing model system for understanding regulatory mechanism of oocyte maturation division. It keeps its chromosomal integrity by inhibiting the first meiotic division (no extrusion of the first pole body). The spindle behavior during oocyte maturation is significantly different from that in gonochoristic fish. The chromosomes are first arranged in a tripolar spindle, and then they turn around and are reunited mutually to form a normal bipolar spindle. A new member of the fish A-type cyclin gene, cyclin A2, has been isolated by suppression of subtractive hybridization on the basis of its differential transcription in fully-grown oocytes between the gynogenetic silver crucian carp and gonochoristic color crucian carp. There are 18 differing amino acids in the total 428 residues of cyclin A2 between the two forms of crucian carps. In addition, cDNAs of cyclin A1 and cyclin B have also been cloned from them. Thus two members of A-type cyclins, cyclin A1 and cyclin A2, are demonstrated to exist in fish, just as in frog, humans, and mouse. Northern blotting reveals that cyclin A2 mRNA is more than 20-fold and cyclin A1 mRNA is about 2-fold in fully grown oocytes of gynogenetic silver crucian carp compared to gonochoristic color crucian carp. However, cyclin B does not show such a difference between them. Western blot analysis also shows that the cyclin A2 protein stockpiled in fully grown oocytes of gynogenetic crucian carp is much more abundant than in gonochoristic crucian carp. Moreover, two different cyclin A2 expression patterns during oocyte maturation have been revealed in the two closely related crucian carps. For color crucian carp, cyclin A2 protein is translated only after hormone stimulation. For silver crucian carp, cyclin A2 protein can be detected throughout the process of maturation division. The different expression of cyclin A2 may be a clue to understanding the special maturation division of gynogenetic silver crucian carp.

Factors affecting the efficiency of somatic cell nuclear transplantation in the fish embryo

Procedures to improve somatic cell nuclear transplantation in fish were evaluated. We reported effects of nonirradiated recipient eggs, inactivated recipient eggs, different combinations between recipient eggs and donor cells, duration of serum starvation, generation number, and passage number of donor cells on developmental rates of nuclear transplant (NT) embryos. Exposure to 25,000 R of gamma-rays inactivated recipient eggs. Single nucleus of cultured, synchronized somatic cell from gynogenetic bighead carp (Aristichthys nobilis) was transplanted into nonirradiated or genetically inactivated unfertilized egg of gibel carp (Carassius auratus gibelio). There was no significant difference in developmental rate between nonirradiated and inactivated recipient eggs (27.27% vs. 25.71%, respectively). Chromosome count showed that 70.59% of NT embryos contained 48 chromosomes. It showed that most NT embryos came from donor nuclei of bighead carp, which was supported by microsatellite analysis of NT embryos. But 23.53% of NT embryos contained more than 48 chromosomes. It was presumed that those superfluous chromosomes came from nonirradiated recipient eggs. Besides, 5.88% of NT embryos were chimeras. Eggs of blunt-snout bream (Megalobrama amblycephala) and gibel carp were better recipient eggs than those of loach (Misgurnus anguillicaudatus) (25% and 18.03% vs. 8.43%). Among different duration of serum starvation, developmental rate of NT embryos from somatic nuclei of three-day serum starvation was the highest, reaching 25.71% compared to 14.14% (control), 20% (five-day), and 21.95% (seven-day). Cultured donor cells of less passage facilitated reprogramming of NT embryos than those of more passage. Recloning might improve the developmental rate of NT embryos from the differentiated donor nuclei. Developmental rate of fourth generation was the highest (54.83%) and the lowest for first generation (14.14%) compared to second generation (38.96%) and third generation (53.01%). (C) 2002 Wiley-Liss, Inc.

Introduction of the human lactoferrin gene into grass carp (Ctenopharyngodon idellus) to increase resistance against GCH virus

Haemorrhage can be an epidemic and fatal condition in grass carp. It is known now that the Grass Carp Haemorrhage Virus (GCHV) triggers haemorrhage. Human lactoferrin (hLF) plays an important role in the non-specific immune system, making some organisms more resistant to some viruses. Sperm of grass carp was mixed with linearized pCAhLFc, which is a DNA construct containing an hLF cDNA and the promoter of common carp beta-actin gene, and then electroporated. Then, mature eggs were fertilized in vitro with the treated sperm cells. The fry were sampled and analyzed by polymerase chain reaction (PCR). Results indicated that the foreign gene had been transferred successfully into the cells of some fry. Under optimal electroporation conditions, the efficiency of gene transfer was as high as 46.8%. About 35.7% of treated 5-month-old grass carp contained foreign genes. Most transgenic fry demonstrated significant delays in onset of symptoms of haemerrhage after injection of GCHV, suggesting a significant positive relationship between hLF cDNA and levels of disease resistance (P < 0.01). Results suggest that transgenic grass carp could be bred for increased resistance to haemorrhage. (C) 2002 Elsevier Science B.V. All rights reserved.

A Diode-Side-Pumped Dynamic Fundamental Mode Nd:YAG Laser

A fundamental mode Nd YAG laser is experimentally demonstrated with a stagger pumped laser module and a special resonator. The rod is pumped symmetrically by staggered bar modules. A dynamic fundamental mode is achieved with the special resonator under different pump levels. A maximal continuous wave output of 61 W (M-2 = 1.4) is achieved with a single rod. An average output of 47 W, pulse width of 54 ns, pulse energy of 4.7 mJ and peak power of 87 kW are obtained under the Q-switched operation of 10 kHz.

Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission intensity and reduced forward voltage compared with LEDs with CS-QWs active region. Based on the electroluminescence measurements and the devices structure analysis, it can be concluded that these improvements are mainly attributed to the efficient hole tunneling through barriers and consequently the uniform distribution of carriers in the AS-QWs. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3254232]

The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer

The structural and photoluminescence (PL) properties of the InAs quantum dots (QDs) grown on a combined InAlAs and GaAs strained buffer layer have been investigated by AFM and PL measurements. The dependence of the critical thickness for the transition from 2D to 3D on the thickness of GaAs layer is demonstrated directly by RHEED. The effects of the introduced-InAlAs layer on the density and the aspect ratio of QDs have been discussed.

Electroabsorption-Modulated DFB laser Integrated.With dual-core spot-size converters

A 1.55-mu m single shallow ridge electroabsorptionmodulated distributed feedback laser that is monolithically integrated with a buried-ridge-stripe dual-core spot-size converter (SSC) at the input and output ports was fabricated by combining selective area growth, quantum-well intermixing, and dual-core integration techniques simultaneously. These devices exhibit a threshold current of 34 mA, a side mode suppression ratio of 38.0 dB, a 3-dB modulation bandwidth of 11.0 GHz, and a modulator extinction ratio of 25.0 dB dc. The output beam divergence angles of the SSC in the horizontal and vertical directions are as small as 7.3 degrees x 18 degrees, respectively, resulting in 3.2-dB coupling loss with a cleaved single-mode optical fiber.

Room-temperature continuous-wave electrically injected InP-GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 pm and the output-waveguide width of 1 or 2 pm are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-mu m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.

A photonic crystal waveguide with silicon on insulator in the near-infrared band

A two-dimensional (2D) photonic crystal waveguide in the Gamma-K direction with triangular lattice on a silicon-on insulator (SOI) substrate in the near-infrared band is fabricated by the combination of electron beam lithography and inductively coupled plasma etching. Its transmission characteristics are analysed from the stimulated band diagram by the effective index and the 2D plane wave expansion (PWE) methods. In the experiment, the transmission band edge in a longer wavelength of the photonic crystal waveguide is about 1590 nm, which is in good qualitative agreement with the simulated value. However, there is a disagreement between the experimental and the simulated results when the wavelength ranges from 1607 to 1630 nm, which can be considered as due to the unpolarized source used in the transmission measurement.

A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

Structure dependence of mode edges in photonic crystal waveguide with silicon on insulator

The mode edges of photonic crystal waveguide with triangular lattice based on a silicon-on-insulator slab are investigated by combination of the effective index method and two-dimensional plane wave expansion method. The variations of waveguide-mode edges with structure parameters of photonic crystal are deduced. When the ratio of the radius of air holes to the lattice constrant, r/Lambda, is fixed and the lattice constant of photonic crystal, Lambda, increases, the waveguide-mode edges shift to longer wavelengths. When Lambda is fixed and r/Lambda increases, the waveguide-mode edges shift to shorter wavelengths. Additionally, when r/Lambda and Lambda are both fixed, the radius of the two-row air holes adjacent to the waveguide increases, the waveguide-mode edges shift to shorter wavelengths.

A two-dimensional photonic crystal slab mirror with silicon on insulator for wavelength 1.3 mu m

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3 mu m with a silicon-on-insulator (Sol) substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the F-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3 mu m, hence the incident light at wavelength 1.3 mu m will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540mn. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.

GaAs absorber grown at low temperature used in passively Q-switched diode pumped solid state laser

We report, for the first time to the best of our knowledge, on a passively Q-switched Nd:YVO4 laser with a GaAs absorber grown at low temperature (LT) by metal organic vapor phase expitaxy. Using the LT GaAs absorber as well as an output coupler, a passively Q-switched laser whose pulse duration is as short as 90 ns, was obtained.

Effect of nonradiative recombination on carrier dynamics in GaInNAs/GaAs quantum wells

The nonradiative recombination effect on carrier dynamics in GaInNAs/GaAs quantum wells is studied by time-resolved photoluminescence (TRPL) and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well stimulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.

Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon

Intense room-temperature near infrared (NIR) photoluminescence (980 nm and 1032 nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the F-2(5/2) and F-2(7/2) levels of Yb3+ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2. Photoluminescence exitation sprectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminscence of rare-earth ions in SiO2 is very effective.