RF-MBE Grown AlGaN/GaN HEMT Structure with High Al Content

A Si doped AlGaN/GaN HEMT structure with high Al content (x= 44%) in the barrier layer is grown on sapphire substrate by RF-MBE. The structural and electrical properties of the heterostructure are investigated by the triple axis X-ray diffraction and Van der Pauw-Hall measurement, respectively. The observed prominent Bragg peaks of the GaN and AlGaN and the Hall results show that the structure is of high quality with smooth interface.fabricated and characterized. Better DC characteristics, maximum drain current of 1.0A/mm and extrinsic transconductance of 218mS/mm are obtained when compared with HEMTs fabricated using structures with lower Al mole fraction in the AlGaN barrier layer. The results suggest that the high Al content in the AlGaN barrier layer is promising in improving material electrical properties and device performance.

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System

Single crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system, using SiH_4, C_2H_4 and H_2 as gas precursors. X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films. Electrical properties of the epitaxial 3C-SiC layers with thickness of 1 ～ 3μm are measured by Van der Pauw method. The improved Hall mobility reaches the highest value of 470cm~2/(V·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3).

圆柱涡激振动的结构-尾流振子耦合模型研究

建立了一个新的结构一尾流振子耦合模型, 流场近尾迹动力学特征被模化为非线性阻尼振子, 采用van der Pol方程描述.以控制体中结构与近尾迹流体间受力互为反作用关系来实现流固耦合, 采用该模型进行了二维结构涡激振动计算, 得到了合理的振幅随来流流速的变化规律和共振幅值, 并正确地预计了共振振幅值 A~*_(max) 随着质量阻尼参数(m~*+ C_A)ζ的变化规律, 给出了预测A*_(max) 值的拟合公式, 采用该模型计算了三维柔性结构在均匀来流和简谐波形来流作用下的VIV响应.结构在均匀来流作用下振动呈现由驻波向行波的变化过程, 并最后稳定为行波振动形态, 在简谐波形来流作用下, 结构呈现混合振动形态, 幅值随时间呈周期变化

A NEW WAKE OSCILLATOR MODEL FOR PREDICTING VORTEX INDUCED VIBRATION OF A CIRCULAR CYLINDER

This article proposes a new wake oscillator model for vortex induced vibrations of an elastically supported rigid circular cylinder in a uniform current. The near wake dynamics related with the fluctuating nature of vortex shedding is modeled based on the classical van der Pol equation, combined with the equation for the oscillatory motion of the body. An appropriate approach is developed to estimate the empirical parameters in the wake oscillator model. The present predicted results are compared to the experimental data and previous wake oscillator Model results. Good agreement with experimental results is found.

Measurement of the inelastic branch of the O-14(alpha, p)F-17 reaction: Implications for explosive burning in novae and x-ray bursters

A measurement of the inelastic component of the key astrophysical resonance in the 14O(α,p)17F reaction for burning and breakout from hot carbon-nitrogen-oxygen (CNO) cycles is reported. The inelastic component is found to be comparable to the ground-state branch and will enhance the 14O(α,p)17F reaction rate. The current results for the reaction rate confirm that the 14O(α,p)17F reaction is unlikely to contribute substantially to burning and breakout from the CNO cycles under novae conditions. The reaction can, however, contribute strongly to the breakout from the hot CNO cycles under the more extreme conditions found in x-ray bursters.

Measurement of the inelastic branch of the stellar O-14(alpha,p)F-17 reaction occurring in the explosive burning in Novae and X-ray busters

The inelastic component of the key astrophysical resonance (1(-), E-x=6.15 MeV) in the O-14(alpha,p)F-17 reaction has been studied by using the resonant scattering of F-17+p. The experiment was done at REX-ISOLDE CERN with the Miniball setup. The thick target method in inverse kinematics was utilized in the present experiment where a 44.2 MeV F-17 beam bombarded a similar to 40 mu m thick (CH2)(n) target. The inelastic scattering protons in coincidence with the de-excited 495 keV gamma rays have been clearly seen and they are from the inelastic branch to the first excited state in F-17 following decay of the 1(-) resonance in Ne-18. Some preliminary results are reported.

A systems view of integrated coastal management

Natural hazards and human activities in the coastal zone are threatening the integrity of the coastal resource system. Conflicts of interest between short term economic benefits and long term ecologic assets should be identified and solved by means of a balanced CZM approach. Systems analysis, supported by mathematical modelling tools are the appropriate instruments to assist the coastal zone manager. The paper presents a general system description of the coastal zone, and focuses on the modelling of the natural subsystem components of this system as a first step towards a model for Integrated Coastal Management (ICM).

Decomposition of emergent macrophyte roots and rhizomes in a northern prairie marsh

Dry mass, nitrogen and phosphorus content in belowground litter of four emergent macrophytes (Typha glauca Godr., Phragmites australis (Cav.) Trin., Scolochloa festucacea (Willd.) Link and Scirpus lacustris L.) were followed for 1.2 years in a series of experimental marshes, Delta Marsh, Manitoba. Litter bags containing roots and rhizome materials of each species were buried in unflooded soil, or soil flooded at three water depths (1–30, 31–60, > 60 cm). There were few differences in dry mass loss in unflooded or flooded soils, and depth of flooding also had little effect on decomposition rates. In the flooded sites, Scolochloa and Phragmites roots lost more mass (48.9–63.8% and 59.2–85.5%, respectively) after 112 days than Typha and Scirpus (36.3–43.6 and 37.0–47.2%, respectively). These differences continued through to the end of the study, except in the shallow sites where Scirpus roots lost more mass and had comparable mass remaining as Scolochloa and Phragmites. In the unflooded sites, there was little difference between species. All litters lost nitrogen (22.9–90.0%) and phosphorus (46.3–92.7%) during the first 112 days, then levels tended to remain constant. Decay rates for our belowground root and rhizome litters were comparable to published literature values for aboveground shoot litter of the same species, except for Phragmites roots and rhizomes which decomposed at a faster rate (−k = 0.0014−0.0032) than shoots (−k = 0.0003−0.0007, [van der Valk, A.G., Rhymer, J.M., Murkin, H.R., 1991. Flooding and the decomposition of litter of four emergent plant species in a prairie wetland. Wetlands 11, 1–16]).

锈革孔菌科(担子菌门,非褶菌目)中国二新记录种(英文)

<正>1 INTRODUCTION During the investigation on wood-inhabiting fungi in China, two species of the Hymenochaetaceae were found: Fomitiporia texana (Murrill) Nuss and Inonotus ochroporus (Van der Byl) Pegler. Because they were not recorded in the Chinese fungal flora (Dai, 1999; Dai et al., 2001; Dai & Niemel?, 2006; Nú?ez & Ryvarden, 2000; Ryvarden, 2005), and their illustrated descriptions are given according to our collections.

Molecular Nanocluster with a [Sn4Ga4Zn2Se20](8-) T3 Supertetrahedral Core

A multinary molecular nanocluster, in which a T3 supertetrahedral [Sn4Ga4Zn2Se20](8-) core was neutralized and covalently terminated by four [(TEPA)Mn](2+) (TEPA = tetraethylenepentamine) metal complexes, was synthesized and characterized. The cluster is assembled into, through hydrogen bonding and van de Waals forces, a superlattice that is chemically stable and free of strong covalent coupling. The four different cations were distributed within the cluster in such a manner that both the local charge balance and global charge compensation by the metal complex could be satisfied.

SYNTHESIS AND X-RAY STRUCTURE OF A SEMICONDUCTING ORGANOMETALLIC SALT [FECP(TOL)](2)[NI(MNT)(2)]

The compound [FeCp(Tol)](2)[Ni(mnt)(2)] has been prepared from [FeCp(Tol)]AlCl4 and Na-2[Ni(mnt)(2)]. This new organometallic radical ionic salt has been characterized by elemental analysis, IR, H-1 NMR and mass spectroscopy. The X-ray structure of the compound shows there are segregated cation and anion stacks in the perpendicular directions, The molecular anions form a zig-zag stacking along the b axis, and between every two neighbouring anion planes a methyl group of the cation is inserted. This gives rise to a long spacing of 6.87 Angstrom, between the anion planes. The cations stack along the c axis, with the closest spacing of 3.457 Angstrom between the cyclopentadienyl plane and the neighbouring toluene plane, which is shorter than the sum of Van der Wall's radii. Conductivity measurements showed the compound as a semiconductor with a room temperature conductivity of 1.6 X 10(-4) Scm(-1).