Enhanced charge storage characteristics of silicon nanocrystals fabricated by electron-beam coevaporation of Si and SiOx(x=1 or 2)

In this article, a simple and flexible electron-beam coevaporation (EBCE) technique has been reported of fabrication of the silicon nanocrystals (Si NCs) and their application to the nonvolatile memory. For EBCE, the Si and SiOx(x=1 or 2) were used as source materials. Transmission electron microscopy images and Raman spectra measurement verified the formation of the Si NCs. The average size and area density of the Si NCs can be adjusted by increasing the Si:O weight ratio in source material, which has a great impact on the crystalline volume fraction of the deposited film and on the charge storage characteristics of the Si NCs. A memory window as large as 6.6 V under +/- 8 V sweep voltage was observed for the metal-oxide-semiconductor capacitor structure with the embedded Si NCs.

Photovoltaic effect in a photon storage cell

The response of photonic memory effect in I-V characteristics of a specially designed photonic memory cell was reported. When the cell is biased in a storage mode, the optical excitation with the photon's energy larger than the energy gap gives rise to a step-like jump in the current. A set-up was used to measure the transient photocurrent at the biases where the step-like jump showed up. It is proved that the falling transient edge of the photocurrent, as the photoexcitation turns off, mainly maps the decaying of electrons and holes, which were previously stored in the cell during the illumination. Its time constant is a measure of photonic memory time.

Photon-storage in optical memory cells based on a semiconductor quantum dot-quantum well hybrid structure

We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)-quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of 100ms has been obtained at a temperature of 10 K while the switching speed reaches the order of ten megahertz.

Storage of photoexcited electron-hole pairs in an AlAs/GaAs heterostructure created by electron transfer in real and kappa spaces

The storage of photoexcited electron-hole pairs is experimentally carried out and theoretically realized by transferring electrons in both real and k spaces through resonant Gamma - X in an AlAs/GaAs heterostructure. This is proven by the peculiar capacitance jump and hysteresis in the measured capacitance-voltage curves. Our structure may be used as a photonic memory cell with a long storage time and a fast retrieval of photons as well.

network and device-level impacts: performance and reliability of active i/o storage systems

中国计算机学会

Polarization holographic high-density optical data storage in bacteriorhodopsin film

Optical films containing the genetic variant bacteriorhodopsin BR-D96N were experimentally studied in view of their properties as media for holographic storage. Different polarization recording schemes were tested and compared. The influence of the polarization states of the recording and readout waves on the retrieved diffractive image's intensity and its signal-to-noise ratio were analyzed. The experimental results showed that, compared with the other tested polarization relations during holographic recording, the discrimination between the polarization states of diffracted and scattered light is optimized with orthogonal circular polarization of the recording beams, and thus a high signal-to-noise ratio and a high diffraction efficiency are obtained. Using a He-Ne laser (633 nm, 3 mW) for recording and readout, a spatial light modulator as a data input element, and a 2D-CCD sensor for data capture in a Fourier-transform holographic setup, a storage density of 2 x 10(8) bits/cm(2) was obtained on a 60 x 42 mu m(2) area in the BR-D96N film. The readout of encoded binary data was possible with a zero-error rate at the tested storage density. (c) 2005 Optical Society of America.

Polarization multiplexed write-once-read-many optical data storage in bacteriorhodopsin films

In polymeric films of bacteriorhodopsin (BR) a photoconversion product, which was named the F620 state, was observed on excitation of the film with 532 nm nanosecond laser pulses. This photoproduct shows a strong nonlinear absorption. Such BR films can be used for write-once-read-many (WORM) optical data storage. We demonstrate that a photoproduct similar or even identical to that obtained with nanosecond pulses is generated on excitation with 532 mn femtosecond pulses. This photoproduct also shows strong anisotropic absorption, which facilitates polarization storage of data. The product is thermally stable and is irretrievable to the initial B state either by photochemical reaction or through a thermal pathway. The experimental results indicate that the product is formed by a two-photon absorption process. Optical WORM storage is demonstrated by use of two polarization states, but more polarization states may be used. The combination of polarization data multiplexing and extremely short recording time in the femtosecond range enables very high data volumes to be stored within a very short time. (c) 2005 Optical Society of America.

Experimental investigation of parallel optical data storage using pyrrylfulgide photochromic material

The optical storage characteristics of a new kind of organic photochromic material-pyrrylfulgide were experimentally investigated in the established parallel optical data storage system. Using the pyrrylfulgide/PMMA film as a photon-mode recording medium, micro-images and encoded binary digital data were recorded, readout and erased in this parallel system. The storage density currently reaches 3 x 10(7) bit/cm(2). The recorded information on the film can be kept for years in darkness at room temperature.

Synthesis and application on parallel image storage of bisfurylfulgide

A bisfurylfulgide, E, E-3,4-bis[1-(2,5-dimethyl-3-furyl)ethylidene]-3,4-dihydrofuran-2,5-dione, is synthesized by Stobbe condensation reaction. The molecular structure of target compound is confirmed by single crystal X-ray crystallography analysis. It shows that the distances between two possible reaction sites of molecule are 0.3394 and 0.3406 nm respectively, which is favorable to photocyclization. The photochromic properties of this compound in different solvents are investigated, and the result shows that the compound exhibits excellent photochromic behavior. The primary result of applied research on parallel image storage is also presented.

Experimental study on polarization holographic storage in genetic mutant BR-D96N film

Recording with both parallel and orthogonal linearly polarized lights, polarization holographic storage in genetic mutant BR-D96N film is reported with both transmission type geometry and reflection type geometry. Polarization properties of diffraction light and scattering light are discussed for two different cases, parallel polarization recording and orthogonal polarization recording. It shows that, compared with recording with parallel polarization lights, orthogonal polarization holography can separate the diffraction light from the scattering noise, therefore improving the signal-to-noise ratio. It also shows that, compared with reconstruction with reference light, reconstruction with phase conjugated wave of the reference light can improve the signal-to-noise ratio of the reconstructed diffraction image, and also the wave-front aberration of the object light introduced by irregular phase object in the optical pass-way can also be corrected effectively, which ensures that the reconstructed diffraction image has a better fidelity. The preliminary angle-multiplexed volume holographic storage multiplexed by transmission type geometry and reflection type geometry is demonstrated in the BR-D96N film. Experiment shows that there is no cross-talk between the two pages of images except for some scattering noises.