Vortex dislocations in wake-type flow induced by spanwise disturbances

Vortex dislocations in wake-type flow induced by three types of spanwise disturbances superimposed on an upstream velocity profile are investigated by direct numerical simulations. Three distinct modes of vortex dislocations and flow transitions have been found. A local spanwise exponential decay disturbance leads to the appearance of a twisted chainlike mode of vortex dislocation. A stepped spanwise disturbance causes a streamwise periodic spotlike mode of vortex dislocation. A spanwise sinusoidal wavy disturbance with a moderate waviness causes a strong unsteadiness of wake behavior. This unsteadiness starts with a systematic periodic mode of vortex dislocation in the spanwise direction followed by the spanwise vortex shedding suppressed completely with increased time and the near wake becoming a steady shear flow. Characteristics of these modes of vortex dislocation and complex vortex linkages over the dislocation, as well as the corresponding dynamic processes related to the appearance of dislocations, are described by examining the variations of vortex lines and vorticity distribution. The nature of the vortex dislocation is demonstrated by the substantial vorticity modification of the spanwise vortex from the original spanwise direction to streamwise and vertical directions, accompanied by the appearance of noticeable vortex branching and complex vortex linking, all of which are produced at the locations with the biggest phase difference or with a frequency discontinuity between shedding cells. The effect of vortex dislocation on flow transition, either to an unsteady irregular vortex flow or suppression of the Kaacutermaacuten vortex shedding making the wake flow steady state, is analyzed. Distinct similarities are found in the mechanism and main flow phenomena between the present numerical results obtained in wake-type flows and the experimental-numerical results of cylinder wakes reported in previous studies.

Energy transfer between silicon-oxygen-related defects and Yb3+ in transparent glass ceramics containing Ba2TiSi2O 8 nanocrystals

We report on the conversion of near-ultraviolet radiation of 250-350 nm into near-infrared emission of 970-1100 nm in Yb3+-doped transparent glass ceramics containing Ba2TiSi2O8 nanocrystals due to the energy transfer from the silicon-oxygen-related defects to Yb3+ ions. Efficient Yb3+ emission (F-2(5/2)-> F-2(7/2)) was detected under the excitation of defects absorption at 314 nm. The occurrence of energy transfer is proven by both steady state and time-resolved emission spectra, respectively, at 15 K. The Yb2O3 concentration dependent energy transfer efficiency has also been evaluated, and the maximum value is 65% for 8 mol % Yb2O3 doped glass ceramic. These materials are promising for the enhancement of photovoltaic conversion efficiency of silicon solar cells via spectra modification.

Optical bistability via amplitude and phase control of a microwave field

We investigate the steady-state optical bistability behavior in a three-level A-type atomic system closed by a microwave field under the condition that the applied fields are in resonance with corresponding atomic transitions. It is shown that the bistable hysteresis cycles can be controlled by both the amplitude and the phase of the microwave field. (c) 2006 Elsevier B.V. All rights reserved.

Inter-stage line ratio of He- and Li-like Ti emissions for the electron temperature measurement

Under coronal conditions, the steady state rate-equations are used to calculate the inter-stage line ratios between Li-like Is(2)2p(P-2(3/2))-> 1s(2)2s -> ((2) S-1/2) and He-like 1s2p (P-1(1))-> 1s(2) (S-1(0)) transitions for Ti in the electronic temperature ranges from 0.1 keV to 20 keV. The results show that the. temperature sensitivities are higher at the electronic temperature less than 5000 eV and the temperature sensitivities will decrease with the increase of electronic temperature.

Theoretical investigation of nonvolatile holographic storage in doubly doped lithium niobate crystals

We have studied theoretically the inherent mechanisms of nonvolatile holographic storage in doubly doped LiNbO3 crystals. The photochromic effect of doubly doped LiNbO3 crystals is discussed, and the criterion for this effect is obtained through the photochromism-bleach factor a = S(21)gamma(1)/S(11)gamma(2) that we define. The two-center recording and fixing processes are analytically discussed with extended Kukhtarev equations, and analytical expressions for recorded and fixed steady-state space-charge fields as well as temporal behavior during the fixing process are obtained. The effects of microphysical quantities, the macrophotochromic effect on fixing efficiency, and recorded and fixed steady-state space-charge fields, are discussed analytically and numerically. (C) 2002 Optical Society of America.

连续波工作大功率半导体激光器阵列的温度分布

用Ansys软件模拟了大功率半导体激光器阵列的稳态温度分布，并对自行研制的半导体激光器阵列的温度变化进行了测试，结果表明理论计算与实验结果基本吻合。该模拟结果对大功率半导体激光器阵列的封装设计具有现实的指导意义。

Phase mapping of domain kinetics in lithium niobate by digital holographic interferometry

The phase mapping of domain kinetics under the uniform steady-state electric field is achieved and investigated in the LiNbO3 crystals by digital holographic interferometry. We obtained the sequences of reconstructed three-dimensional and two-dimensional wave-field phase distributions during the electric poling in the congruent and near stoichiometric LiNbO3 crystals. The phase mapping of individual domain nucleation and growth in the two crystals are obtained. It is found that both longitudinal and lateral domain growths are not linear during the electric poling. The phase mapping of domain wall motions in the two crystals is also obtained. Both the phase relaxation and the pinning-depinning mechanism are observed during the domain wall motion. The residual phase distribution is observed after the high-speed domain wall motion. The corresponding analyses and discussions are proposed to explain the phenomena.

掺镱双包层光纤放大器高功率脉冲放大特性

从放大器速率方程出发，分析了掺镱双包层光纤放大器的放大特性。模拟计算了无信号输入时放大器上能级粒子数、泵浦功率和放大自发辐射（ASE）在放大器中的稳态分布。分析了前向和后向泵浦时，高功率高斯脉冲放大时的脉冲波形畸变、上能级粒子数的时间特性、放大器存储能量和脉冲能量演化等动态特性。讨论了掺镱双包层光纤放大器输出脉冲能量随不同输入脉冲峰值功率和泵浦功率的关系。该模型和结论对高功率脉冲放大器的设计和优化具有一定的理论指导意义。

Three-photon absorption-induced fluorescence and optical limiting effects in a fluorene derivative

This paper reports on the steady-state fluorescence, three- photon absorption-induced fluorescence emission and subsequently induced optical limiting behaviour of a fluorene derivative with D-pi-D structural motifs. The lifetime of the steady-state fluorescence is 0.903 ns. Large optical limiting behaviour induced by 3PA has also been demonstrated, and the nonlinear absorption coefficient gamma derived from 3PA fitting curves is 5.92 x 10(-20) cm(3)/W-2 and the corresponding molecular 3PA cross-section sigma(3)' is 1.14 x 10(-76) cm(6) s(2).

Enhanced near-infrared emission from Ni2+ in Cr3+ Ni2+ codoped transparent glass ceramics

Transparent Li2O-Ga2O3-SiO2 glass ceramics containing Cr3+/Ni2+ codoped LiGa5O8 nanocrystals were synthesized. The steady state emission spectra indicated that the near-infrared emission intensity of Ni2+ at 1300 nm in Cr3+/Ni2+ codoped glass ceramics was enhanced up to about 7.3 times compared with that in Ni2+ single-doped glass ceramics with 532 nm excitation. This enhancement in emission intensity was due to efficient energy transfer from Cr3+ to Ni2+, which was confirmed by time-resolved emission spectra. The energy transfer efficiency was estimated to be 85% and the energy transfer mechanism was discussed. (C) 2008 American Institute of Physics.