Repeat-until-success distributed quantum computation by using single-photon interference at a beam splitter

A repeat-until-success (RUS) measurement-based scheme for the implementation of the distributed quantum computation by using single-photon interference at a 50:50 beam splitter is proposed. It is shown that the 50:50 beam splitter can naturally project a suitably encoded matter-photon state to either a desired entangling gate-operated state of the matter qubits or to their initial state when the photon is detected. The recurrence of the initial state permits us to implement the desired entangling gate in a RUS way. To implement a distributed quantum computation we suggest an encoding method by means of the effect of dipole-induced transparency proposed recently [E. Waks and J. Vuckovic, Phys. Rev. Lett. 96, 153601 (2006)]. The effects of the unfavorable factors on our scheme are also discussed.

Single sub-100 attosecond pulse generation in a two-colour time-gating laser field

We theoretically propose a method of generating a single sub-100 attosecond (as) pulse with a two-colour time-gating laser field. The field is synthesized by an 8 fs/800 nm (three optical cycles) pulse and a 24 fs/2400 nm (three optical cycles) pulse with an optimal time delay between them. In our simulation, we obtain a supercontinuum with an extremely broad spectrum of 150 eV and generate an isolated attosecond pulse with 96 as pulse duration without any dispersion compensation.

Orientation-controllable self-organized microgratings induced in the bulk SrTiO3 crystal by a single femtosecond laser beam

Self-organized microgratings were induced in the bulk SrTiO3 crystal by readily scanning the laser focus in the direction perpendicular to the laser propagation axis. The groove orientations of those gratings could be controlled by changing the irradiation pulse number per unit scanning length, which could be implemented either through adjusting the scanning velocity at a fixed pulse repetition rate or through varying the pulse repetition rate at a fixed scanning velocity. This high-speed method for fabrication of microgratings will have many potential applications in the integration of micro-optical elements. The possible formation mechanism of the self-organized microgratings is also discussed. (C) 2007 Optical Society of America.

Gamma-ray induced color centers in Yb : YAG crystals grown by Czochralski method

20 at.% Yb:YAG single crystals have been grown by the CZ method and gamma-ray irradiation induced color centers and valence change of Fe3+ and Yb3+ ions in Yb:YAG have been studied. One significant 255 nm absorption band was observed in as-grown crystals and was attributed to Fe3+ ions. Two additional absorption (AA) bands located at 255 nm and 345 nm, respectively, were produced after gamma irradiation. The changes in the AA spectra after gamma irradiation and air annealing are mainly related to the charge exchange of the Fe3+, Fe2+, oxygen vacancies and F-type color centers. Analysis shows that the broad AA band is associated with Fe2+ ions and F-type color centers. The transition Yb3+ Yb2+ takes place as an effect of recharging of one of the Yb3+ ions from a pair in the process of gamma irradiation. (C) 2006 Elsevier Ltd. All rights reserved.

Spectral narrowing of negatively chirped femtosecond pulse by cross-phase modulation in a single-mode optical fiber

We demonstrate theoretically that the negatively chirped femtosecond laser pulse can be spectrally narrowed by cross-phase modulation. The new view is well Supported by numerical simulation. The negative chirp method in fibers might be useful in all optical wavelength switching applications. (c) 2005 Elsevier B.V. All rights reserved.

Digital holographic interferometry and the angular spectrum method applied to measuring the domain inversion in ferroelectric crystal

The application of digital holographic interferometry on the quantitative measurement of the domain inversion in a RuO2: LiNbO3 crystal wafer is presented. The recorded holograms are reconstructed by the angular spectrum method. From the reconstructed phase distribution we can clearly observe the boundary between the inverted and un-inverted domain regions. Comparisons with the results reconstructed by use of the Fresnel transform method are given. Factors that influence the measurement include the spectrum filter size and the spectrum movement are discussed. The spectrum filter size has an effect on the measurement of the details. Although the spectrum movement affects every single reconstructed image, it has no influence on the final measurement.

Single mode Er-doped pi-phase-shifted distributed feedback fibre grating laser

A novel method incorporating the shielded method and the post-processing method has been proposed to fabricate the pi-phase-shilted fibre grating. Then an Er-doped pi-phase-shifted distributed feedback fibre grating laser has been fabricated using the grating. The laser threshold is 20 mW. When pumped with 90 mW light at 980 nm, the laser gives an output of 1.1 mW. Its signal-to-noise ratio is better than 60 dB. It is demonstrated that the laser is single mode operation by means of a Fabry-Perot scanning interferometer.

75 mW robust single frequency Yb-doped DFB fiber Bragg grating laser

Incorporating the shielded method and post-processing method, a 75 mW single frequency Yb-doped DFB fiber laser was obtained with a 250 mW laser diode pump source at 978 nm. The threshold of the laser is 2 mW. The laser is single-polarization operation and the output power fluctuation is less than 0.2 mW in one hour when the pump power is 250 mW.

Crystal growth and optical properties of Gd1.99-xYxCe.0.01SiO5 single crystals

Gd1.99-xYxCe0.01SiO5 (Ce:GYSO) crystals (x = 0, 0.0995, 0.199) have been grown by the Czochralski (Cz) method. Crystal structure and the distribution coefficients of Ce have been determined for all three crystals. Spectroscopic measurements indicate that optical transmittance and luminescence intensity of Gd1.99-xYxCe0.01SiO5 (x = 0.0995, 0.199) crystals are Substantially higher than those of Ce:Gd2SiO5 (Ce:GSO), especially at x = 0.0995, which makes them good candidate materials for scintillation applications. The particularly important result is that the alloyed Ce:GYSO crystals can be grown easily by the Cz method and, unlike Ce:GSO, they do not undergo cleavage during the growth process or subsequent mechanical treatment. (c) 2005 Elsevier B.V. All rights reserved.

Effects of Yb concentration on the fluorescence spectra of Yb-doped YAlO3 single crystals

0.5 at.% Yb:YAlO3(YAP), 5 at.% Yb:YAP and 15 at.% Yb:YAP were grown using the Czochralski method. Their absorption and fluorescence spectra were measured at room temperature and their emission line shape was calculated using the method of reciprocity. It was observed that the fluorescence spectra changed appreciably with the increasing of Yb concentration. For 0.5 at.% Yb:YAP, the line shape of fluorescence is very similar with the calculated emission line shape; with the increasing of Yb doping concentration, the line shape of fluorescence is very different from the calculated emission line shape. These phenomena are caused by the strong self-absorption at 979 and 999 nm for Yb:YAP. (c) 2005 Elsevier B.V. All rights reserved.

Growth of excellent-quality Nd : LuVO4 single crystal and laser properties

High-quality Nd:LuVO4 single crystal was successfully grown by Czochralski method. The assessment of the crystalline quality by the chemical etching method and Conoscope image was reported. The absorption spectra from 300 to 1000 nm and emission spectra from 960 to 1450 nm of Nd: LuVO4 were measured. Laser performance was achieved with Nd:LUVO4 crystal for the transition of F-4(3/2) -> I-4(11/2) (corresponding wavelength 1065.8 nm) in an actively Q-switched operation, and the average output power reached 5.42 W at a pulse repetition frequency (PRF) of 40 kHz under pump power of 18 W, giving an optical conversion efficiency of 30.1%. The pulse energy and peak power reached 138 mu J and 16.2 kW at PRF of 25 kHz under pump power of 14.2 W, and the pulse duration was 8.5 ns. (c) 2005 Elsevier B.V. All rights reserved.

Optical spectroscopy of Yb3Al5O12 single crystal

Yb3Al5O12 single crystal has been grown by Czochralski (CZ) method. The absorption spectrum was investigated at low temperature and the electronic energy levels for F-2(5/2) multiplet of Yb3+ in YbAG was proposed. The up-conversion emission of the crystal under 940 nm diode pumping and the X-ray excited luminescence (XEL) features of the crystal were also studied. (c) 2005 Elsevier B.V. All rights reserved.

Growth and spectroscopic characteristics of Yb : GSO single crystal

For the first time, a high optical quality 10 at.% Yb3+-doped gadolinium oxyorthosilicate laser crystal Gd2SiO5 (GSO) was grown by the Czochralski (Cz) method. The segregation coefficient of Yb3+ was studied by the inductively coupled plasma atomic emission spectrometer (ICP-AES) method. The crystal structure has monoclinic symmetry with space group P2(1)/c; this was determined by means of an x-ray diffraction analysis. The absorption spectra, fluorescence spectra and fluorescence decay curves of Yb3+ ions in a GSO crystal at room temperature were also studied. Then, the spectroscopic parameters of Yb:GSO were calculated. The advantages of the Yb:GSO crystal include high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections and particularly broad emission bandwidth (similar to 72 nm). The results indicated that the Yb:GSO crystal seemed to be a very promising laser gain medium in diode-pumped femtosecond laser and tunable solid state laser applications when LD pumped at 940 and 980 nm.

gamma-LiAlO2 single crystal grown by Czochralski technique and modified by vapor transport equilibration (VTE) technique

Large-sized (similar to 2 inch, 50.8 mm) gamma-UA102 single crystal has been grown by conventional Czochralski (Cz) method, but the crystal ha's a milky, dendriform center. The samples taken from transparent and milky parts were ground and examined by X-ray diffraction. All diffraction peaks could be indexed in gamma-LiAlO2. The crystal quality was characterized by X-ray rocking curve. The full-width at half-maximum (FWHM) values are 116.9 and 132.0 arcsec for transparent and milky parts, respectively. The vapor transport equilibrium (VTE) technique was introduced to modify the crystal quality. After 1000 degrees C/48 h, 1100 degrees C/48 h, 1200 degrees C/48 h VTE processes, the FWHM values dropped to 44.2 and 55.2 arcsec for transparent and milky part, respectively. The optical transmission of transparent part was greatly enhanced from 85% to 90%, and transmission of milky part from 75% to 80% in the range of 190 similar to 1900 nm at room temperature. When the VTE temperature was raised to 1300 degrees C, the sample cracked and FWHM values of transparent and milky parts were increased to 55.2 and 80.9 arcsec, respectively. By combining Cz technique with VTE technique, large-sized and high quality gamma-LiAlO2 crystal can be obtained.

Growth and spectroscopic characteristics of Yb : LPS single crystal

For the first time, a high optical quality Yb3+-doped lutetium pyrosilicate laser crystal Lu2Si2O7 (LPS) was grown by the Czochralski (Cz) method. The segregation coefficient of ytterbium ion in Yb:LPS crystal detected by the inductively coupled plasma atomic emission spectrometer (TCP-AES) method is equal to 0.847. X-ray powder diffraction result confirms the C2/m phase monoclinic space group of the grown crystal and the peaks corresponding to different phases were indexed. The absorption and fluorescence spectra, as well as fluorescence decay lifetime of Yb3+ ion in LPS have been investigated. The absorption and fluorescence cross-sections of the transitions F-2(7/2) <-> F-2(5/2) of Yb3+ ion in LPS crystal have been determined. The advantages of the Yb:LPS crystal including high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections (1.33 x 10(-2) cm(2)) and particularly broad emission bandwidth (similar to 62 nm) indicated that the Yb:LPS crystal seemed to be a promising candidate used as compact, efficient thin chip lasers when LD is pumped at 940 and 980 nm due to its low-symmetry monoclinic structure and single crystallographic site. (c) 2007 Elsevier B.V. All rights reserved.