Impacts of Choerospondias axillaris growth on acidity of Udic Ferrosols in subtropical China

Changes in acidity of Udic Ferrosols, caused by growth of Choerospondias axillaris (Roxb.) Burtt et Hill, in comparison to wild grass, were investigated for pH distribution in the soil profile, exchangeable acidity, and cation status in the soil leachate of a simulated leaching experiment. Soils were sampled in profiles at 5 cm intervals to a depth of 100 cm. In the 1.5-60 cm layer the soils with 10-year old C. axillaris had significantly lower pH (P < 0.05), with the largest difference being 0.41: and in the 25-75 cm soil depths, especially in the 30-55 cm layer, the soils had a significantly higher exchangeable acidity, ranging 1.93 to 3.02 cmol(c) kg(-1). There was also higher aluminum, potassium, and sodium contents in the soil leachate under C. axillaris than with wild grasses. This suggested that the growth of C. axillaris accelerated acidification of Udic Ferrosols and promoted soil clay mineral weathering.

Impacts of filter-feeding fishes on the long-term changes of crustacean zooplankton in a eutrophic subtropical Chinese lake

Long-term changes In the crustacean zooplankton community (calanoid and cyclopoid copepods and cladocerans) were studied in Lake Donghu, a shallow and eutrophic Chinese lake. This lake had been earlier stocked with two pump Alter-feeding Ashes, silver carp (Hypopthalmichthys molitrix) and bighead carp (Aristichthys nobilis). During the 1950s and the mid-1980s, the ratio of copepods to cladocerans was relatively stable but showed a general increase thereafter. From the early-1980s to the 1990s, calanoid/cyclopoid ratios decreased obviously. In the 1990s, Cyclops vicinus, Diaphanosoma brachyurum, and Moina micrura were dominant the abundance of C. vicinus and M. micrura increased significantly; and D, brachyurum showed a substantial decrease. The study shows that under extremely high pressure of Ash predation, the species which could recover rapidly from fish predation would be the most likely to survive and increase their numbers.

Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films

Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Nanostructure in the p-layer and its impacts on amorphous silicon solar cells

The open circuit voltage (V-oc) of n-i-p type hydrogenated amorphous silicon (a-Si:H) solar cells has been examined by means of experimental and numerical modeling. The i- and p-layer limitations on V-oc are separated and the emphasis is to identify the impact of different kinds of p-layers. Hydrogenated protocrystalline, nanocrystalline and microcrystalline silicon p-layers were prepared and characterized using Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), optical transmittance and activation energy of dark-conductivity. The n-i-p a-Si:H solar cells incorporated with these p-layers were comparatively investigated, which demonstrated a wide variation of V-oc from 1.042 V to 0.369 V, under identical i- and n-layer conditions. It is found that the nanocrystalline silicon (nc-Si:H) p-layer with a certain nanocrystalline volume fraction leads to a higher V-oc. The optimum p-layer material for n-i-p type a-Si:H solar cells is not found at the onset of the transition between the amorphous to mixed phases, nor is it associated with a microcrystalline material with a large grain size and a high volume fraction of crystalline phase. (c) 2006 Elsevier B.V. All rights reserved.

network and device-level impacts: performance and reliability of active i/o storage systems

中国计算机学会