808 nm high-power laser grown by MBE through the control of Be diffusion and use of superlattice

808 nm high-power laser diodes are gown by MBE. In the laser structure, the combination of Si-doped GRIN (graded-index) region adjacent to n-AlGaAs cladding layer with reduced Be doping concentration near the active region has been used to diminish Be diffusion and oxygen incorporation. As compared with the laser structure which has undoped GRIN region and uniform doping concentration for Si and Be, respectively, in the cladding layers, the slope efficiency has increased by about 8%. Typical threshold current density of 300 A/cm(2) and the minimum threshold current density of 220 A/cm(2) for lasers with 500 mu m cavity length are obtained. A high slope efficiency of 1.3 W/A for coated lasers with 1000 mu m cavity length is also demonstrated, Recorded CW output power at room temperature has reached 2.3 W.

Analysis of the optical confinement factor in semiconductor lasers

We derive formulas for the optical confinement factor Gamma from Maxwell's equations for TE and TM modes in the slab waveguide. The numerical results show that the formulas yield correct mode gain for the modes propagating in the waveguide. We also compare the formulas with the standard definition of Gamma as the ratio of power flow in the active region to the total power flow. The results show that the standard definition will underestimate the difference of optical confinement factors between TE and TM modes, and will underestimate the difference of material gains necessary for polarization insensitive semiconductor laser amplifiers. It is important to use correct optical confinement factors for designing polarization insensitive semiconductor laser amplifiers. For vertical cavity surface-emitting lasers, the numerical results show that Gamma can be defined as the proportion of the product of the refractive index and the squared electric field in the active region. (C) 1996 American Institute of physics.

Mechanisms of optical confinement in phase-locked laser arrays

The nature of optical confinement in phase-locked laser arrays (PLLAs) with a mesa-stripe structure (MSS) has been studied. Two main mechanisms are distinguished, which are based on the variation of the waveguide effective refractive index due to MSS formation and on the refractive index modulation induced by the heating of the structure. Stable operation was achieved when either weak or strong optical coupling was realized in the PLLA. A phase-locked regime of radiation was obtained only for laser diodes with strong optical coupling. In the latter case the angle divergency was not greater than 2 degrees for the antisymmetric supermode emission from the PLLA.

HIGH-POWER 2-DIMENSIONAL QUANTUM-WIRE LASER ARRAYS

GaAs/AIGaAs two-dimensional quantum-well wire laser arrays fabricated by metal-organic chemical vapour deposition on nonplanar substrates have realised a linear light pulse output Fewer of over 100mW. This is the highest figure reported to date for all kinds of quantum-well wire lasers.

Room temperature continuous wave operation of 1.33-micron InAs/GaAs quantum dot laser with high output power

Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.

Measurement of 3db Bandwidth of Laser Diode Chips

An accurate technique for measuring the frequency response of semiconductor laser diode chips is proposed and experimentally demonstrated. The effects of test jig parasites can be completely removed in the measurement by a new calibration method. In theory, the measuring range of the measurement system is only determined by the measuring range of the instruments network analyzer and photo detector. Diodes' bandwidth of 7.5GHz and 10GHz is measured. The results reveal that the method is feasible and comparing with other method, it is more precise andeasier to use.

All-Optical Clock Recovery for 20 Gb/s Using an Amplified Feedback DFB Laser

We report all optical clock recovery based on a monolithic integrated four-section amplified feedback semiconductor laser (AFL), with the different sections integrated based on the quantum well intermixing (QWI) technique. The beat frequency of an AFL is continuously tunable in the range of 19.8-26.3 GHz with an extinction ratio above 8 dB, and the 3-dB linewidth is close to 3 MHz. All-optical clock recovery for 20 Gb/s was demonstrated experimentally using the AFL, with a time jitter of 123.9 fs. Degraded signal clock recovery was also successfully demonstrated using both the dispersion and polarization mode dispersion (PMD) degraded signals separately.

矩阵理论在半导体激光器耦合中的应用

傍轴近似下的光学矩阵理论，可以简化光束传输计算过程，使光学系统设计更为方便。将ABCD变换矩阵方法引入到耦合光学系统的设计中，运用高斯光束的ABCD法则，详尽地给出了某一耦合方式下的半导体激光器耦合入单模光纤系统的设计；另一方面，对系统的耦合损耗与耦合距离的关系进行了理论计算，并把计算结果与最近的实验报道做了比较，它们基本相吻合，说明此方法是可行的、合理的。从整个设计及理论计算来看，ABCD矩阵方法减少了复杂的计算，从而简化了设计过程，与通常的衍射计算相比，它不失为一种方便、有效的方法，同时它对生产半导体

近衍射极限半导体激光束波面检测

在星间半导体激光通信系统中，如何检测发射光束波面的质量是个较难处理的问题，为了较好地解决这一问题，在简单介绍白光横向双剪切干涉仪的基础上，报道了用此干涉仪对近衍射极限半导体激光光束波面的检测，在此基础上推导出计算远场发散度的公式。实验测得近场光束的波高差为0．2A，通过夫朗和费衍射求得光束的发散度仅为64．8μrad，这表明光束接近光学衍射极限。同时，表明双剪切干涉仪灵敏度高、实用性好。

大功率半导体激光器阵列的封装技术

半导体激光器阵列的应用已基本覆盖了整个光电子领域，成为当今光电子科学的重要技术。本文介绍了半导体激光器阵列的发展及其应用。着重阐述了半导体激光器阵列的封装技术——热沉材料的选择及其结构优化、热沉与半导体激光器阵列之间的焊接技术、半导体激光器阵列的冷却技术、与光纤的耦合技术等。

大功率半导体激光器二维阵列模块特性分析

根据固体激光器抽运的技术要求，设计了一种具有水冷装置的大功率半导体激光器二维阵列模块，并对半导体激光器热沉和致冷系统的热流进行了分析。在不同占空比下，对该模块进行了测试与分析。该模块的中心波长为810nm，光谱半峰全宽（FWHM）为2．5nm，工作电流为110A（200μs，10％占空比），循环水温为15℃时输出峰值功率为280W。结果表明，该封装结构在占空比小于5％时器件工作特性良好，在10％占空比F也可正常工作。利用该模块可以组合成多种几何结构、功率更高的半导体激光器组件。

体布拉格光栅外腔半导体激光器光谱特性研究

用体布拉格光栅(VBG)作为反馈元件与瓦级半导体激光器(LD)以及快轴准直柱透镜构成一个可以将半导体激光器的工作波长稳定在体布拉格光栅布拉格波长处的外腔激光器。测量了体布拉格光栅外腔激光器的波长稳定性与其工作电流、热汇温度、激光束准直装置等因素的关系。分析了波长稳定效果与半导体激光器增益谱特性、外腔结构参量等因素的关系。研究表明,在相同的工作电流、热汇温度下,当准直柱透镜直径为0.4 mm时的波长稳定效果较好;在此情况下,当热汇温度控制在30 ℃,工作电流从0.5 A增加到1.5 A的测量范围内,以及当工

高功率半导体激光器线阵列的波长锁定技术

高功率半导体激光器光谱随温度和工作电流的变化比较大，光谱线宽比较宽，这些缺点直接限制了其实际应用。因此，高功率半导体激光器波长稳定技术的研究是激光领域的一个重要研究方向。对波长稳定技术进行研究。实验用体布拉格光栅（VBG）作为反馈元件与高功率半导体激光器线阵列，构成可以对其波长进行锁定的外腔激光器。分析了外腔激光器的波长锁定效果与高功率半导体激光器工作电流、冷却温度、工作电流的占空比和“smile”现象等因素的关系。研究结果表明，高功率半导体激光器的工作电流、冷却温度、工作电流的占空比会影响其激射波长，当激射波长与VBG的布拉格波长差值小于3．0nm时，可以得到较好的波长锁定效果，而阵列本身的“smile”现象对其波长锁定的影响不大。

连续工作的体布拉格光栅外腔半导体激光器的温度特性

对体布拉格光栅(VBG)作为波长选择元件的外腔半导体激光器的波长锁定进行了实验研究,报道了连续运转输出功率达43.5 W的半导体激光器阵列的体布拉格光栅波长锁定实验结果,给出了不同热沉温度下的稳定的波长锁定结果,说明采用体布拉格光栅外腔将减小半导体激光器的温控压力。实验中发现,随着注入电流的增大,输出激光功率逐渐增强,锁定的激射波长向长波长方向偏移。在输出功率为34.5 W时,波长红移约0.56 nm。这一移动与实验测量的体布拉格光栅的温度特性相吻合。连续和高占空比运行、高输出功率情况下,在器件的设计和使用时应该考虑这一效应。

适合于小飞机防撞系统的机载小型激光测距仪

报道了一种重量轻、功耗低、适合于小飞机防撞系统应用的小型激光测距仪。系统基于脉冲激光测距原理，采用905nm半导体脉冲激光器、电感升压式偏置高压电源和可编程逻辑器件（PLD），研制出重量不大于100g，功耗不大于625mW，测量范围100m，盲区3．0m，分辨率±1m的机载小型激光测距仪。实验测试结果表明，其各项技术性能指标符合无人驾驶小飞机防撞系统的应用要求。