Investigation of the spectroscopic properties of (Y0.92-xLa0.08Ndx)(2)O-3 transparent ceramics

The spectroscopic properties of (Y0.92-xLa0.08Ndx)(2)O-3 transparent ceramics were investigated. According to three intensity parameters (Omega(2),Omega(4),Omega(6)) fitted by the Judd-Ofelt theory, the spectroscopic quality parameter (X-Nd), branching ratio (beta(J,J')), and quantum efficiency (eta) of Nd3+ were determined. It was found that X-Nd of the host, owing to the additive La2O3, was decreased from 1.6 to 0.46; thus beta(J,11/2) was increased from 46% to 56.82%. A figure of merit of the specimens was discussed and compared with Nd:YAG transparent ceramic. (c) 2007 Optical Society of America.

Spectral characterization of transparent (Nd0.01Y0.94La0.05)(2)O-3 laser ceramics

The spectrum properties of transparent (Nd0.01Y0.94La0.05)(2)O-3 ceramics were investigated. It was found that all absorption bands of (Nd0.01Y0.94La0.05)(2)O-3 ceramics are broadened, of which the full width at half maximum of the peak centered at 804 nm is 8 nm and its absorption cross section is 1.02x10(-20) cm(2). The emission cross section of (Nd0.01Y0.94La0.05)(2)O-3 ceramics located at 1078 nm is 5.71x10(-20) cm(2) and its fluorescent lifetime is 0.214 ms, which are similar to those of 1.0 at. %Nd:Y2O3 ceramics. These indicate that (Nd0.01Y0.94La0.05)(2)O-3 transparent ceramics has excellent spectroscopic properties.

Fabrication and spectral properties of Nd3+-doped yttrium lanthanum oxide transparent ceramics

Transparent 1 at% Nd3+:Y1.9La0.1O3 ceramics were fabricated with nanopowders prepared by carbonate coprecipitation method. The powder compacts were sintered in H-2 atmosphere at 1550 degrees C for 30 h. The Nd3+:Y1.9La0.1O3 ceramics display uniform grains of about 50 mu m and high transparency. The highest transmittance of the ceramics reaches 67%. The strongest absorption peak is in the wavelength of 820 nm with absorption cross section of 2.48 x 10(-20) cm(2). The absorption is still high at LD wavelength 806 nm with absorption cross section of 1.78 x 10(-20) cm(2) and broad full width at half maximum (FWHM) of about 6.3 nm. The strongest emission peak was centered at 1078 nm with large stimulated emission cross section of 9.63 x 10(-20) cm(2) and broad FWHM of about 7.8 nm. The broad absorption and emission bandwidth of Nd3+:y(1.9)La(0.1)O(3) transparent ceramics are favorable to achieve the miniaturized LD pumping apparatus and ultrashort modelocked pulse laser output, respectively. (c) 2007 Elsevier B.V. All rights reserved.

Synthesis and luminescence characterization of cerium doped Lu2O3-Y2O3-La2O3 solid solution transparent ceramics

Ce3+:( Lu0.7Y0.25La0.05)(2)O-3 transparent ceramics were fabricated with nanopowders and sintered in H-2 atmosphere. The spectral properties of Ce3+:( Lu0.7Y0.25La0.05)(2)O-3 transparent ceramics were investigated and the luminescence of Ce3+ in the solid solution of Lu2O3, Y2O3 and La2O3 has been found. The ceramics has high density of 8.10g/cm(3) and short fluorescence lifetimes of 7.15 ns and 26.92 ns. It is expected to be a good fast response high temperature inorganic scintillating materials. (C) 2008 Optical Society of America.

Luminescence behavior of Yb(3+)heavy-doped yttrium lanthanum oxide transparent ceramics

Yb3+ heavy-doped yttrium lanthanum oxide transparent ceramics were fabricated and their spectroscopic properties were investigated. The absorption bands of (YbxY0.9-xLa0.1)(2)O-3 (x = 0.05-0.15) ceramics are broad at wavelength of 900-1000 nm. The absorption cross-sections centered at 974 nm and the emission cross-sections at 1031 nm of Yb3+ ion are 0.89-1.12 x 10(-20) cm(2) and 1.05 x 10(-20) cm(2) respectively. The up-conversion luminescence intensity of Yb3+-doped yttrium lanthanum oxide ceramics increased firstly, then decreased with the increase of Yb3+ ion content. (C) 2008 Elsevier B.V. All rights reserved.

Hot-pressed translucent aluminum oxynitride (AlON) ceramics

AlON with a composition of Al23O27N5 was prepared by hot pressing at temperatures lower than 1900°C. The microstructures and final properties, including both mechanical properties and optical properties, of the sintered specimens were studied. The results showed that sintering temperature had a great influence on the densification of specimens and could lead to very different properties, especially the optical transmittance and the maximum infrared transmission.

Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.

Dielectric relaxation and giant dielectric constant of Nb-doped CaCu3Ti4O12 ceramics under dc bias voltage

CaCu3Ti(4-x)Nb(x)O(12) (x = 0, 0.01, 0.08, 0.2) ceramics were fabricated by a conventional solid-state reaction method. The ceramics showed the body-centered cubic structure without any foreign phases and the grain size decreases with Nb doping. Two Debye-type relaxations were observed for the Nb-doped samples at low frequency and high frequency, respectively. The complex electric modulus analysis revealed that the surface layer, grains and grain boundaries contributed to the dielectric constant. The low-frequency dielectric constant relative to the surface layer decreased to a minimum and then increased with the dc bias voltage at 100 Hz, which were well explained in terms of a model containing two metal oxide semiconductors in series, confirming the surface layer in the ceramics. The shift voltage V-B corresponding to the minimal capacitance increased with increase of the composition x. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition

In this paper, about 30 mu m thick B-doped polycrystalline silicon (poly-Si) thin films were deposited on quartz substrates, n-type single crystalline silicon wafers and p(++)-type poly-Si ribbons by a rapid thermal chemical vapour deposition system in a temperature range from 1000 to 1150 degrees C. Activation energy measurement and room temperature/temperature dependent Hall effect measurement were performed on the poly-Si thin films prepared on the former two kinds of substrates, respectively. It seems that the electrical properties of as-prepared poly-Si thin films could be qualitatively explained by Seto's grain boundary (GB) trapping theory although there is a big difference between our samples and Seto's in gain size and film thickness etc. The experimental results reconfirm that GB itself is a kind of most effective recombination center with trapping level near the midgap and trapping state density in the order of 1012 cm(-2) magnitude. Electron beam induced current measurements on the poly-Si thin films prepared on the poly-Si ribbons also show that severe recombination occurs at the positions of GBs. (c) 2005 Elsevier B.V All rights reserved.

Structual and optoelectronic properties of polycrystalline silicon thin films prepared by hot-wire chemical vapor deposition at low temperatures

Polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition ( HWCVD) on glass at 250 degreesC with W or Ta wire as the catalyzers. The structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studied, and the optimized polycrystalline silicon thin films were obtained with X-c > 90 % ( X-c denotes the crystalline ratio of the film), crystal grain size about 30-40nm, R-d approximate to 0.8nm/s, sigma(d) about 10(-7) - 10(-6) Omega(-1) cm(-1), Ea(a) approximate to 0.5eV and E-opt less than or equal to 1.3eV.

Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phese crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposit ion. The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic Force microscopy. The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality, such as large grain size, small lattice microstrain and smooth surface morphology on low-cost glass substrates.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing

An improved pulsed rapid thermal annealing (PRTA) has been used for the solid-phase crystallization (SPC) of a-Si films prepared by PECVD. The SPC can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees C thermal bias/1-s 850 degrees C thermal pulse. The microstructure and surface morphology of the crystallized films are investigated by X-ray diffraction (XRD). The results indicate that this PRTA is a suitable post-crystallization technique for fabricating large-area poly-Si films on low-cost substrate. (C) 2000 Elsevier Science B.V. All rights reserved.