High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures

A systematic study of electron cyclotron resonance (CR) in two sets of GaAs/Al0.3Ga0.7As modulation-doped quantum-well samples (well widths between 12 and 24 nm) has been carried out in magnetic fields up to 30 T. Polaron CR is the dominant transition in the region of GaAs optical phonons for the set of lightly doped samples, and the results are in good agreement with calculations that include the interaction with interface optical phonons. The results from the heavily doped set are markedly different. At low magnetic fields (below the GaAs reststrahlen region), all three samples exhibit almost identical CR which shows little effect of the polaron interaction due to screening and Pauli-principle effects. Above the GaAs LO-phonon region (B > similar to 23 T), the three samples behave very differently. For the most lightly doped sample (3 x 10(11) cm(-2)) only one transition minimum is observed, which can be explained as screened polaron CR. A sample of intermediate density (6 x 10(11) cm(-2)) shows two lines above 23 T; the higher frequency branch is indistinguishable from the positions of the single line of the low density sample. For the most heavily, doped sample (1.2 x 10(12) cm(-2)) there is no evidence of high frequency resonance, and the strong, single line observed is indistinguishable from the lower branch observed from sample with intermediate doping density. We suggest that the low frequency branch in our experiment is a magnetoplasmon resonance red-shifted by disorder, and the upper branch is single-particle-like screened polaron CR. (C) 1998 Elsevier Science B.V. All rights reserved.

Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. (C) 1998 American Institute of Physics. [S0003-6951(98)02543-1].

The growth of an AlGaN/GaN modulation-doped heterostructure by NH3 source molecular beam epitaxy

Using NH3 cracked on the growing surface as the nitrogen precursor, an AlGaN/GaN modulation-doped (MD) heterostructure without a buffer layer was grown on a nitridated sapphire substrate in a home-made molecular beam epitaxy (MBE) system. Though the Al composition is as low as 0.036, as deduced from photoluminescence (PL) measurements, the AlGaN barrier layer can be an efficient carrier supplier for the formation of a two-dimensional electron gas (2DEG) at the heterointerface. The 2DEG characteristics are verified by the variable temperature Hall measurements down to 7 K. Using a parallel conduction model, we estimate the actual mobility of the 2DEG to be 1100 cm(2)/V s as the sheet carrier density to be 1.0 x 10(12) cm(-2). Our results show that the AlGaN/GaN system is very suitable for the fabrication of high electron mobility transistors (HEMTs). (C) 1998 Elsevier Science B.V. All rights reserved.

Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells

Fourier transform photoluminescence measurements were carried out to investigate the optical transitions in InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells. Samples with electron density n(s) between 0.8 and 5.3 x 10(12) cm(-2) rue studied. Strong recombination involving one to three populated electron subbands with the first heavy-hole subband is observed. Fermi edge singularity (FES) clearly can be observed for some samples. The electron subband energies in the InGaAs/InAlAs step quantum wells were calculated by a self-consistent method, taking into account strain and nonparabolicity effects and the comparison with the experimental data shows a good agreement. Our results can help improve understanding for the application of InGaAs/InAlAs step quantum wells in microelectronic and optoelectronic devices. (C) 1998 Elsevier Science Ltd. All rights reserved.

Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure

The population of the third (n = 3) two-dimensional electron subband of InGaAs/InAlAs modulation-doped structures has been observed by means of Fourier transform photoluminescence (PL). Three well resolved PL peaks centred at 0.737, 0.908, and 0.980eV are observed, which are attributed to the transitions from the lowest three electron subbands to the n = 1 heavy-hole subband. The subband separations clearly exhibiting the features of the stepped quantum well with triangle and square potentials are consistent with numerical calculation. Thanks to the presence of Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature- and excitation-dependent luminescences are also analyzed.

The third subband population in modulation-doped InGaAs/InAlAs heterostructures

We have observed the population of the third (n=3) two-dimensional electron subband of InGaAs/ InAlAs modulation-doped structures with very dense sheet carrier density by means of Fourier transform photoluminescence (PL). Three well-resolved PL peaks centered at 0.737, 0.908, and 0.980 eV are observed, which are attributed to the recombination transitions from the lowest three electron subbands to the n=1 heavy-hole subband. The subband separations clearly exhibit the features of the stepped quantum well with triangle and square potential, consistent with numerical calculation. Thanks to the presence of the Fermi cutoff, the population ratio of these three subbands can be estimated. Temperature and excitation intensity dependence of the quantum well luminescence intensity is also analyzed. (C) 1997 American Institute of Physics.

Subtraction of S-parameters for adiabatic small-signal modulation characteristics of laser diode - art. no. 60201V

An extended subtraction method of scattering parameters for characterizing laser diode is introduced in this paper. The intrinsic small-signal response can be directly extracted from the measured transmission coefficients of laser diode by the method. However the chip temperature may change with the injection bias current due to thermal effects, which causes inaccurate intrinsic response by our method. Therefore, how to determine the chip temperature and keep the laser chip adiabatic is very critical when extracting the intrinsic response. To tackle these problems, the dependence of the lasing wavelength of the laser diode on the chip temperature is investigated, and an applicable measurement setup which keeps the chip temperature stable is presented. The scattering parameters of laser diode are measured on diabatic and adiabatic conditions, and the extracted intrinsic responses for both conditions are compared. It is found that the adiabatic intrinsic responses are evidently superior to those without thermal consideration. The analysis indicates that inclusion of thermal effects is necessary to acquire accurate intrinsic response.

Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers

Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under small signals have been carefully studied at various bias currents. Based on experimental observations, it is found that the modulation bandwidth significantly increases when excited state (ES) lasing emerges at high temperature. This is attributed to additional photons emitted by ES lasing which contribute to the modulation response. A rate equation model including two discrete electron energy levels and the level of wetting layer has been used to investigate the temperature-dependent dynamic behavior of the QD lasers. Numerical investigations confirm that the significant jump for the small signal modulation response is indeed caused by ES photons. Furthermore, we identify how the electron occupation probabilities of the two discrete energy levels can influence the photon density of different states and finally the modulation rate. Both experiments and numerical analysis show that the modulation bandwidth of QD lasers at high temperature can be increased by injecting more carriers into the ES that has larger electron state degeneracy and faster carrier's relaxation time than the ground state.

One-dimensional modulation instability of broad optical beams in biased photorefractive-photovoltaic crystals under steady-state conditions

We present a comprehensive study of the one-dimensional modulation instability of broad optical beams in biased photo refractive-photovoltaic crystals under steady-state conditions. We obtain the one-dimensional modulation instability growth rate by globally treating the space-charge field and by considering distinction between values of Eo in nonlocal effects and local effects in the space-charge field, where Eo is the field constant correlated with terms in the space-charge field, which depends on the external bias field, the bulk photovoltaic effect, and the ratio of the optical beam's intensity to that of the dark irradiance. The one-dimensional modulation instability growth rate in local effects can be determined from that in nonlocal effects. When the bulk photovoltaic effect is neglectable, irrespective of distinction between values of Eo in nonlocal effects and local effects in the space-charge field, the one-dimensional modulation instability growth rates in nonlocal effects and local effects are those of broad optical beams studied previously in biased photorefractive-nonphotovoltaic crystals. When the external bias field is absent, the one-dimensional modulation instability growth rates in nonlocal effects and local effects predict those of broad optical beams in open- and closed-circuit photorefractive-photovoltaic crystals. (c) 2004 Elsevier B.V. All rights reserved.

Modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals

We investigate the modulation instability of quasi-plane-wave optical beams in biased photorefractive-photovoltaic crystals by globally treating the space-charge field. The modulation instability growth rate is obtained, which depends on the external bias field, on the bulk photovoltaic effect, and on the ratio of the optical beam's intensity to that of the dark irradiance. Our analysis indicates that this modulation instability growth rate is identical to the modulation instability growth rate studied previously in biased photorefractive-nonphotovoltaic crystals when the bulk photovoltaic effect is negligible for shorted circuits, and predicts the modulation instability growth rate in open- and closed-circuit photorefractive-photovoltaic crystals when the external bias field is absent.

Analysis of the modulation depth affected by the polarization orientation in polarization interference imaging spectrometers

The influence of the orientations of both polarizer and analyzer on modulation depth of spatially distributed interferograms for static polarization interference imaging spectrometer (SPIIS) is analyzed. A generally, theoretical relationship to determine the modulation depth of a SPIIS is derived. The special cases of maximum modulation depth (V = 1) and the minimum modulation depth (V = 0) are examined. Our results will provide a theoretical and practical guide for studying, developing and engineering polarization interference imaging spectrometers. (C) 2003 Elsevier B.V. All rights reserved.