Effects of adrenergic agonists on the extrahepatic expression of vitellogenin Ao1 in heart and brain of the Chinese rare minnow (Gobiocypris rarus)

Teleost vitellogenins (VTGs) are large multidomain apolipoproteins and traditionally considered as the estrogen responsive precursors of the major egg yolk proteins. We identified five clones encoding VTGs, about 16% of the random EST clones from our constructed cDNA library from Chinese rare minnow liver tissue treated with 17 beta-estradiol (E2). Full-length vtgAo1 has been obtained based on the sequence information of four partial cDNA inserts by RACE. The inducibility of the vtgAo1 expression in liver by E2 was confirmed by RT-PCR. The presence of vtgAo1 transcripts have been observed primarily in liver. However. a significant level of the vtgAo1 was found in an unexpected location, heart, particularly in atrial cells by RT-PCR and whole mount in situ hybridization analyses. The vtgAo1 mRNA expression in heart and liver tissue could be suppressed by both alpha-adrenergic agonist, phenylephrine (PE) and beta-adrenergic agonist, isoproterenol (ISO). The expression of VTG in the heart observed in the present studies suggested it may provide protection from surplus intracellular lipids in fish cardiomyocytes as triglyceride transport proteins do in mammals. The results also indicated that the production of teleost vtg in vivo can be regulated by riot only estrogenic agents, but adrenergic signals as well. (c) 2008 Elsevier B.V. All rights reserved.

The involvement of the antioxidant system in protection of desert cyanobacterium Nostoc sp against UV-B radiation and the effects of exogenous antioxidants

In this study, we found that UV-B radiation decreased photosynthetic activity and boosted lipid peroxidation of desert Nostoc sp., and exogenous chemicals (ascorbate acid (ASC), N-acetylcysteine (NAC), and sodium nitroprusside (SNP)) had obvious protective effects on photosynthesis and membranes under UV-B radiation. High-concentration SNP boosted the activities of antioxidant enzymes, but low-concentration SNP reduced the activities of antioxidant enzymes. Both NAC and ASC treatments of cells decreased activities of antioxidant enzymes. The results suggested that those chemicals possibly had different mechanisms of protection of algae cells against UV-B radiation. SNP might play double roles as a signal molecule in the formation of algae cell protection of Photosystem 11 under UV-B radiation and as a (reactive oxygen species) scavenger, while NAC and ASC might function as antioxidant reagents or precursors of other antioxidant molecules, which could protect cells directly against ROS initiated by UV-B radiation. (c) 2006 Elsevier Inc. All rights reserved.

Cloning and expression analysis in mature individuals of two chicken type-II GnRH (cGnRH-II) genes in common carp (Cyprinus carpio)

Gonadotropin-releasing hormone (GnRH) is a conservative neurodecapeptide family, which plays a crucial role in regulating the gonad development and in controlling the final sexual maturation in vertebrate. Two differing cGnRH-II cDNAs of common carp, namely cGnRH-II cDNA1 and cDNA2, were firstly cloned from the brain by rapid amplification of cDNA end (RACE) and reverse transcription- polymerase chain reaction (RT-PCR). The length of cGnRH-II cDNA1 and cDNA2 was 622 and 578 base pairs (bp), respectively. The cGnRH-II precursors encoded by two cDNAs consisted of 86 amino acids, including a signal peptide, cGnRH-II decapeptide and a GnRH-associated peptide (GAP) linked by a Gly-Lys-Arg proteolytic site. The results of intron trapping and Southern blot showed that two differing cGnRH-II genes in common carp genome were further identified, and that two genes might exist as a single copy. The multi-gene coding of common carp cGnRH-II gene offered novel evidence for gene duplication hypothesis. Using semi-quantitative RT-PCR, expression and relative expression levels of cGnRH-II genes were detected in five dissected brain regions, pituitary and gonad of common carp. With the exception of no mRNA2 in ovary, two cGnRH-II genes could be expressed in all the detected tissues. However, expression levels showed an apparent difference in different brain regions, pituitary and gonad. According to the expression characterization of cGnRH-II genes in brain areas, it was presumed that cGnRH-II might mainly work as the neurotransmitter and neuromodulator and also operate in the regulation for the GnRH releasing. Then, the expression of cGnRH-II genes in pituitary and gonad suggested that cGnRH-II might act as the autocrine or paracrine regulator.

Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.

Composition deviation of arrays of FePt nanoparticles starting from poly(styrene)-poly(4-vinylpyridine) micelles

Ordered arrays of FePt nanoparticles were prepared using a diblock polymer micellar method combined with plasma treatment. Rutherford backscattering spectroscopy analyses reveal that the molar ratios of Fe to Pt in metal-salt-loaded micelles deviate from those when metal precursors are added, and that the plasma treatment processes have little influence upon the compositions of the resulting FePt nanoparticles. The results from Fourier transform infrared spectroscopy show that the maximum loadings of FeCl3 and H2PtCl6 inside poly( styrene)-poly(4-vinylpyridine) micelles are different. The composition deviation of FePt nanoparticles is attributed to the fact that one FeCl3 molecule coordinates with a single 4-vinylpyridine (4VP) unit, while two neighboring and uncomplexed 4VP units are required for one H2PtCl6 molecule. Additionally, we demonstrate that the center-to-center distances of the neighboring FePt nanoparticles can also be tuned by varying the drawing velocity.

Chemical liquid phase deposition of thin aluminum oxide films

Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system's pH value played an important role in this experiment. The growth rate is 12 nm/h with the deposition at [Al-2(SO4)(3)]=0.0837 mol.L-1, [NaHCO3]=0.214 mol.L-1, 15 degreesC. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy, Fourier transform infrared spectrum, X-ray diffraction spectrum and scanning electron microscopy photograph.

Porous ZnAl2O4 spinel nanorods doped with Eu3+: synthesis and photoluminescence

Eu3+-doped zinc aluminate (ZnAl2O4) nanorods with a spinel structure were successfully synthesized via an annealing transformation of layered precursors obtained by a homogeneous coprecipitation method combined with surfactant assembly. These spinel nanorods, which consist of much finer nanofibres together with large quantities of irregular mesopores and which possess a large surface area of 93.2 m(2) g(-1) and a relatively narrow pore size distribution in the range of 6 - 20 nm, are an ideal optical host for Eu3+ luminescent centres. In this nanostructure, rather disordered surroundings induce the typical electric-dipole emission (D-5(0) --> F-7(2)) of Eu3+ to predominate and broaden.

In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.

Photoluminescence properties of Eu3+-doped ZnS nanocrystals prepared in a water/methanol solution

Monodispersed ZnS and Eu3+-doped ZnS nanocrystals have been prepared through the co-precipitation reaction of inorganic precursors ZnCl2, EuCl3, and Na2S in a water/methanol binary solution. The mean particle sizes are about 3-5 nm. The structures of the as-prepared ZnS nanoparticles are cubic (zinc blende) as demonstrated by an x-ray powder diffraction. Photoluminescence studies showed a stable room temperature emission in the visible spectrum region for all the samples, with a broadening in the emission band and, in particular, a partially overlapped twin peak in the Eu3+-doped ZnS nanocrystals. The experimental results also indicated that Eu3+-doped ZnS nanocrystals, prepared by controlling synthetic conditions, were stable. (C) 2002 American Institute of Physics.

Correlated structural and optical investigation of terbium-doped zinc oxide nanocrystals

Tb3+-doped zinc oxide nanocrystals with a hexagonal wurzite structure were successfully prepared by reaction between Zn-O-Tb precursors and LiOH in ethanol. Good incorporation of Tb3+ in ZnO nanocrystals is proved by XRD, FTIR, PL and PLE measurements. The presence of acetate complexes to zinc atoms on particle surfaces is disclosed by FTIR results. Emission from both Tb3+ ions and surface states in ZnO matrix, as well as their correlation were observed. The luminescence mechanism is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions

Nanocrystalline Ge:H thin films were deposited simultaneously on both electrodes of a conventional capacitively coupled reactor for plasma enhanced chemical vapor deposition using highly H-2 diluted GeH4 as the source gas. The structure of the films was investigated by Raman scattering and X-ray diffraction as a function of substrate temperature, H-2 dilution, and r.f. power. The hydrogen concentrations and bonding configurations were determined by infrared absorption spectroscopy. For anodic deposition, the preferred crystallographic orientation and film crystallinity depend rather strongly on the deposition parameters. This dependence can be explained by changing surface mobilities of adsorbed precursors due to changes in the hydrogen coverage of the growing surface. Cathodic deposition is much less sensitive to variations in the deposition parameters. It generally results in films of high crystallinity with randomly oriented crystallizes. Some possible mechanisms for these differences between anodic and cathodic deposition are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

猕猴胚胎干细胞的神经谱系分化及胶质祖细胞迁移机理研究

由于伦理和材料来源的限制，目前对灵长类早期神经发育缺乏深入地了解。与啮齿类动物相比，猕猴在遗传和生理上与人类更接近，因此猕猴胚胎干细胞(rESCs)研究具有重要的研究价值，不仅能为研究发育生物学基础理论提供良好的模型，而且可为细胞替代性治疗提供大量的供体细胞。本文以rESCs为主要研究对象，在rESCs定向分化为神经细胞的基础上着重研究神经谱系分化及调控胶质祖细胞迁移的机理。主要结论如下：1) rESCs来源的神经上皮干/前体细胞(NEPs)主要变为辐射状胶质细胞(RG)后再通过中间类型的祖细胞——神经元祖细胞(NPs)和胶质祖细胞(GPs)——分别分化为神经元和胶质细胞。同时，NEPs/RG细胞群具有早期神经管背-腹和前-后轴空间特性。NEPs/RG的维持受Notch和FGFR信号作用。此外，实验中还纯化和鉴定了猕猴胶质限定性前体细胞(GRPs)。结果表明，rESCs的神经谱系分化能够模拟体内发育过程，并与啮齿类动物早期神经谱系变化过程相似。2) 气体信号分子NO(由10μM—250μM SNP供体释放)促进rESCs来源的A2B5+/Nestin/PSA-NCAM胶质祖细胞迁移。进一步研究发现Netrin-DCC信号通路介导了NO启动的细胞迁移过程。同时，Ca2也参与调控胶质祖细胞的迁移。此外，细胞外基质和整合素α6亦可能与Netrin-DCC相互作用调控细胞迁移。结果显示，NO通过激活一个复杂的信号网络系统调控胶质祖细胞迁移。本实验的研究结果有助于揭示灵长类中枢神经系统发育的机理，同时也能为治疗神经系统退行性疾病提供阶段特异性的供体细胞。

Improvement of the stability of hydrogenated amorphous silicon films by intermittent illumination treatment at elevated temperature

The intermittent illumination treatment by white light at elevated temperature is proved to be a convenient and efficient method for the improvement of the stability of hydrogenated amorphous silicon (a-Si:H) films. The effect of the treatment on electrical properties, light-induced degradation, and gap states of undoped a-Si:H films has been investigated in detail. With the increase of cycling number, the dark- as well as photo-conductivities in annealed state and light-soaked state approach each other, presenting an unique irreversible effect. The stabilization and ordering processes by the present treatment can not be achieved merely by annealing under the same conditions. It is shown that the treatment proposed here results in a shift to higher values of the energy barriers between defects and their precursors, and hence an improved stability of a-Si:H films. (C) 1996 American Institute of Physics.

Metal-organic Vapor Phase Epitaxy Growth and Characterization of InAlGaN Epilayers

In order to improve crystal quality for growth of quaternary InAlGaN, a series of InAlGaN films were grown on GaN buffer layer under different growth temperatures and carrier gases by low-pressure metal-organic vapor phase epitaxy. Energy dispersive spectroscopy (EDS) was employed to measure the chemical composition of the quaternary, high resolution X-ray diffraction (HRXRD) and photoluminescence (PL) technique were used to characterize structural and optical properties of the epilayers, respectively. The PL spectra of InAlGaN show with and without the broad-deep level emission when only N2 and a N2+H2 mixture were used as carrier gas, respectively. At pressure of 1.01×104 Pa and with mixed gases of nitrogen and hydrogen as carrier gas, different alloy compositions of the films were obtained by changing the growth temperature while keeping the fluxes of precursors of indium (In), aluminum (Al), gallium (Ga) and nitrogen (N2) constant. A combination of HRXRD and PL measurements enable us to explore the relative optimum growth parameters-growth temperature between 850℃ and 870℃,using mixed gas of N2+H2 as carrier gas.

Selective Area Growth InGaAsP by MOVPE

The wide stripe (ISjum) selective area growth (SAG) of InGaAsP by low pressure MOVPE is systematically investigated. The characteristics of the growth ratios,thickness enhancement factors .bandgap modulation,and composition modulation vary with the growth conditions such as mask width,growth pressure. Flux of III-group precursors are outlined and the rational mechanism behind SAG MOVPE is explained. In addition,the surface spike of the SAG InGaAsP is shown and the course of it is given by the variation of V /III .