PCR-RFLP analysis of mitochondrial DNA ND5/6 region among 3 subspecies of common carp (Cyprinus carpio L.) and its application to genetic discrimination of subspecies

Mitochondrial DNA ND5/6 region was studied by PCR-RFLP analysis among ten representative strains belonging to three subspecies (Cyprinus carpio carpio, Cyprinus carpio haematopterus and Cyprinus carpio rubrofuscus) of common carp (Cyprinus carpio L.). A total of 2.4 kb fragment was amplified and subjected to restriction endonuclease analysis with nine restriction endonucleases subsequently. The results indicated that each subspecies owned one hyplotype and four restriction enzymes (Dde I, HaeIII, Taq I and Mbo I) produced diagnostic restriction sites which could be used for discriminating the three subspecies and as molecular genetic markers for assistant selective breeding of common carp.

Analysis of organchlorine compounds in water by solid phase microextraction and gas chromatography

In this work, both,solid phase microextraction (SPME) and solid phase extraction(SPE) were used to enrich organochlorine compounds in water samples and analyzed by gas chromatography with electron capture detector. The operating conditions of SPME have been studied and different kinds of solid phase were compared. Linear alkybenzene sulfonate(LAS) was added to the samples to investigate its effect on the analysis. The results indicated that polyacrylate was better than other commercial solid phases in extraction of moderated polar organic compounds and the sensitivity of SPME was higher than SPE. LAS affect much in liquid-liquid extraction and headspace SPME; but it has little effect on SPE and direct-SPME method. The applications showed that SPME was a fast and effective method in sample preparation.

A non-linear perturbation model considering catchment wetness and its application in river flow forecasting

A non-linear perturbation model for river flow forecasting is developed, based on consideration of catchment wetness using an antecedent precipitation index (API). Catchment seasonality, of the form accounted for in the linear perturbation model (the LPM), and non-linear behaviour both in the runoff generation mechanism and in the flow routing processes are represented by a constrained nan-linear model, the NLPM-API. A total of ten catchments, across a range of climatic conditions and catchment area magnitudes, located in China and in other countries, were selected for testing daily rainfall-runoff forecasting with this model. It was found that the NLPM-API model was significantly more efficient than the original linear perturbation model (the LPM). However, restric tion of explicit nan-linearity to the runoff generation process, in the simpler LPM-API form of the model, did not produce a significantly lower value of the efficiency in flood forecasting, in terms of the model efficiency index R-2. (C) 1997 Elsevier Science B.V.

Synthesis of MDMO-PPV capped PbS quantum dots and their application to solar cells

Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) capped PbS quantum dots about 3-6 nm in diameter were synthesized with a novel method. Unlike the synthesis of oleic acid capped PbS quantum dots, the reactions were carried out in solution at room temperature, with the presence of a capping ligand species, MDMO-PPV. The quantum dots were used to fabricate bulk heterojunction solar cells with an indium tin oxide (ITO)/polyethylenedioxythiophene/polystyrenesulphonate (PEDOT: PSS)/MDMO-PPV: PbS/Al structure. Current density-voltage characterization of the devices showed that after the addition of the MDMO-PPV capped PbS quantum dots to MDMO-PPV film, the performance was dramatically improved compared with pristine MDMO-PPV solar cells. (C) 2008 Elsevier Ltd. All rights reserved.

Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs

Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO2 as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.

The multi-weight neuron with geometry algorithm and its application

A novel approach for multi-dimension signals processing, that is multi-weight neural network based on high dimensional geometry theory, is proposed. With this theory, the geometry algorithm for building the multi-weight neuron is mentioned. To illustrate the advantage of the novel approach, a Chinese speech emotion recognition experiment has been done. From this experiment, the human emotions are classified into 6 archetypal classes: fear, anger, happiness, sadness, surprise and disgust. And the amplitude, pitch frequency and formant are used as the feature parameters for speech emotion recognition. Compared with traditional GSVM model, the new method has its superiority. It is noted that this method has significant values for researches and applications henceforth.

The synthesis of MDMO-PPV capped PbS nanorods and their application in solar cells

Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) capped PbS nanorods about 100 nm in diameter and 400 nm in length were synthesized via a hydrothermal route in toluene and dimethylsulfoxide solution. By blending the PbS nanorods with the MDMO-PPV as the active layer, bulk heterojunction solar cells with an indium tin oxide (ITO)/polyethylenedioxythiophene/polystyrenesulphonate (PEDOT PSS)/MDMO-PPV PbS nanorods/Al structure were fabricated in a N-2 filled glove box, Current density-voltage characterization of the devices showed that the solar cells with PbS nanorods hybrid with MDMO-PPV as active layer were better in performance than the devices with the polymer only. (C) 2009 Elsevier B.V. All rights reserved.

Double synaptic weight neuron theory and its application

In this paper, a novel mathematical model of neuron-Double Synaptic Weight Neuron (DSWN)(l) is presented. The DSWN can simulate many kinds of neuron architectures, including Radial-Basis-Function (RBF), Hyper Sausage and Hyper Ellipsoid models, etc. Moreover, this new model has been implemented in the new CASSANN-II neurocomputer that can be used to form various types of neural networks with multiple mathematical models of neurons. The flexibility of the DSWN has also been described in constructing neural networks. Based on the theory of Biomimetic Pattern Recognition (BPR) and high-dimensional space covering, a recognition system of omni directionally oriented rigid objects on the horizontal surface and a face recognition system had been implemented on CASSANN-II neurocomputer. In these two special cases, the result showed DSWN neural network had great potential in pattern recognition.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at similar to 1 mu m, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

Nanocrystalline silicon films with high conductivity and the application for PIN solar cells

Intrinsic nanocrystalline silicon films (nc-Si:H) were prepared by plasma enhanced chemical vapor deposition (PECVD) method. Films' microstructures and characteristics were studied with Raman spectroscopy and Atom Force Microscope (AFM). The electronic conductivity of nc-Si:H films was found to be 4.9 x 10(0)Omega(-1) cm(-1), which was one order of magnitude higher than the reported 10(-3)-10(-1)Omega(-1)cm(-1). And PIN solar cells with nc-Si:H film as intrinsic thin-layer (ITO/n(+)-nc-Si:H/i-nc-Si:H/p-c-Si/Ag) were researched. The cell's performances were measured, the open-circuit voltage V-oc was 534.7 mV, short-circuit current I-sc was 49.24 mA (3 cm(2)) and fill factor FF was 0.4228. (c) 2006 Elsevier Ltd. All rights reserved.

Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers

Rapid thermal annealing (RTA) has been demonstrated as an important way to improve the crystal quality of GaInNAs(Sb)/GaAs quantum wells. However little investigation has been made into their application in laser growth, especially at a wavelength of 1.55 mu m. When a GaAs-based laser is grown, AlGaAs is usually used for cladding layers. The growth of the p-cladding layer usually takes 30-45 min at a growth temperature higher than that of the GaInNAs(Sb) active region, which affects the material quality. To investigate this effect, various post-growth annealing processes were performed to simulate this process. Great enhancement of the PL intensity was obtained by a two-step process which consisted of annealing first at 700 degrees C for 60 s and then at 600 degrees C for 45 min. We transferred this post-growth annealing to in situ annealing. Finally, a GaInNAsSb laser was grown with a 700 degrees C in situ annealing process. Continuous operation at room temperature of a GaAs-based dilute nitride laser with a wavelength beyond 1.55 mu m was realized for the first time.

Space grown semi-insulating gallium arsenide single crystal and its application

Low noise field effect transistors and analogue switch integrated circuits (ICs) have been fabricated in semi-insulating gallium arsenide (SI-GaAs) wafers grown in space by direct ion-implantation. The electrical behaviors of the devices and the ICs have surpassed those fabricated in the terrestrially grown SI-GaAs wafers. The highest gain and the lowest noise of the transistors made from space-grown SI-GaAs wafers are 22.8 dB and 0.78 dB, respectively. The threshold back-gating voltage of the ICs made from space-grown SI-GaAs wafers is better than 8.5 V The con-elation between the characterizations of materials and devices is studied systematically. (C) 2002 COSPAR. Published by Elsevier Science Ltd. All rights reserved.

Mode analysis of photonic crystal polarization beam splitter and its application in integrated circuits design - art. no. 698437

In this work, the guided modes of a photonic crystal polarization beam splitter (PC-PBS) are studied. We demonstrate that the transmission of a low-loss photonic crystal 120 degrees waveguide bend integrated with the PBS will be influenced if the PBS is multi-moded. We propose a single-moded PC-PBS structure by introducing deformed structures, and it shows twice the enhancement of the transmission. This device with remarkable improvement of performance is promising in the use of photonic crystal integrated circuits design.

Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection

Homoepitaxial growth of 4H-SiC p(+)/pi/n(-) multi-epilayer on n(+) substrate and in-situ doping of p(+) and pi-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H-2. The surface morphologies, homogeneities and doping concentrations of the n(-)-single-epilayers and the p(+)/pi/n(-) multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and,multi-epilayers have good surface morphologies and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in pi layer. The UV photodetectors fabricated on 4H-SiC p(+)/pi/n(-) multi-epilayers showed low dark current and high detectivity in the UV range.