CALCULATED ELECTRONIC AND MAGNETIC-STRUCTURES OF THE NEW TERNARY RARE-EARTH IRON NITRIDE ND2FE17N3

The electronic and magnetic structures of Nd2Fe17 and Nd2Fe17N3 have been calculated using the first-principle, spin-polarized orthogonalized linear combination of atomic orbitals method. Comparative studies of the two materials reveal important effects of the nitrogen atoms (at 9e site) on the electronic and magnetic structures. Results are presented for the total density of states, site-projected partial density of states and the spin magnetic moments on four nonequivalent Fe sites. The highest magnetic moments are found to be located on the 6c site for Nd2Fe17 and on the 9d site for Nd2Fe17N3, in agreement with the neutron and Mossbauer experiments. The variation trends of the magnetic moments on different Fe sites are discussed in terms of the separation between Fe and N atoms. Compared with Nd2Fe17, an increase in the exchange splitting of the Fe d band is found in Nd2Fe17N3, which accounts for its higher Curie temperature as observed in experiments. The calculated results show that the nitrogen atoms are charge acceptors in these compounds.

PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING

A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantation and two-step conventional furnace annealing is described. During the first annealing step (600-degrees-C), implanted hydrogen atoms move towards the damage region and then coalesce into hydrogen gas bubbles at the residual defect layer. During the second annealing step (1180-degrees-C) these bubbles do not move due to their large volume. Structural defects are formed around the bubbles at a depth of approximately 0.5-mu-m. The defect layer results in a high resistivity value. Experiments show that the quality of the surface layer has been improved because the surface Hall mobility increased by 20%. The sample was investigated by transmission electron microscopy.

A new structure of In-based ohmic contacts to n-type GaAs

Electrical, structural and reaction characteristics of In-based ohmic contacts to n-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated by e-beam sputtering Ni, NiIn and Ge targets on VPE-grown n(+)-GaAs film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of Ni(200 Angstrom)/NiIn(100 Angstrom)/Ge(40 Angstrom)/n(+)-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500-900 degrees C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3In. The lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the Transmission Line Method (TLM) was obtained after annealing at 700 degrees C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, InxGa1-xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.

Strain gradient theory based on a new framework of non-local model

A new framework of non-local model for the strain energy density is proposed in this paper. The global strain energy density of the representative volume element is treated as a non-local variable and can be obtained through a special integral of the local strain energy density. The local strain energy density is assumed to be dependent on both the strain and the rotation-gradient. As a result of the non-local model, a new strain gradient theory is derived directly, in which the first and second strain gradients, as well as the triadic and tetradic stress, are introduced in the context of work conjugate. For power law hardening materials, size effects in thin metallic wire torsion and ultra-thin cantilever beam bend are investigated. It is found that the result predicted by the theoretical model is well consistent with the experimental data for the thin wire torsion. On the other hand, the calculation result for the micro-cantilever beam bend clearly shows the size effect.

Experimental Setup for Assessing the Energetic Materials Deflagration Propagation under High Temperature and High Pressure Conditions

The technology of "explosion in fractures" is one of new synthetic engineering methods used in low permeability reservoirs. The most important problem arose from the technology is to assess the deflagration propagation capability of milky explosives in rock fractures. In order to investigate detailed this problem in the laboratory, an experimental setup was designed and developed in which different conditions can be simulated. The experimental setup mainly includes two parts. One is the experimental part and the other is the measurement part. In the experimental setup, the narrow slots with different width can be simulated; meanwhile, different initial pressures and initial temperatures can be loaded on the explosives inside the narrow slots. The initial pressure range is from 0-60 MPa, and the initial temperatures range is from room temperature to 100 V. The temperature and the velocity of deflagration wave can be measured; meanwhile the corresponding pressure in the narrow slot is also measured. In the end, some typical measurement results are briefly presented and discussed.

A new dual injection system for AMS facility

IEECAS SKLLQG

New results on Xi'an-AMS and sample preparation systems at Xi'an-AMS center

IEECAS SKLLQG

Design and synthesis of near-IR luminescent mesoporous materials covalently linked with tris(8-hydroxyquinolinate) lanthanide(III) complexes

By using the bifunctional ligand, 8-hydroxyquinoline-functionalized organosilane (Q-Si), the new mesoporous material Q-MCM-41 covalently bonded with 8-hydroxyquinoline was synthesized. Through the ligand exchange reaction, the new near-infrared (NIR) luminescent mesoporous LnQ(3)-MCM-41 (Ln = Er, Nd, Yb) materials were prepared by linking the lanthanide quinolinate complexes to the ordered mesoporous Q-MCM-41 material. The LnQ(3)-MCM-41 materials were characterized by powder X-ray diffraction and N-2 adsorption/desorption, and they all show the characteristic mesoporous structure of MCM-41 with highly uniform pore size distributions.

La-2(Zr0.7Ce0.3)(2)O-7 - A new oxide ceramic material with high sintering-resistance

Oxide ceramics with high sintering-resistance above 1473 K have very important applications in thermal barrier coatings (TBCs), catalytic combustion and high-temperature structural materials. Lanthanum zirconate (La2Zr2O7, LZ) is an attractive TBC material which has higher sintering-resistance than yttria stabilized zirconia (YSZ), and this property could be further improved by the proper addition of ceria.

Silica Materials Doped with Bifunctional Ionic Liquid Extractant for Yttrium Extraction

Two new silica-based organic-inorganic hybrid materials (B104SGs and O104SGs) doped with a binary mixture of imidazolium and phosphonium ionic liquids have been synthesized and used as sorbents in batch system for rare earths (RE) separation. Imidazolium ionic liquids 1-butyl-3-methylimidazolium hexafluorophosphate (C(4)mim(+)PF(6)(-)) or 1-octyl-3-methylimidazolium hexafluorophosphate (C(8)mim(+)PF(6)(-)) acted as porogens to prepare porous materials and additives to stabilize extractant within silica gel.

Preparation and photovoltaic property of a new polyfluorene derivative/ZnO nanoparticles hybrid composites

A new kind of polyfluorene copolymers, poly(2,7-(9,9-dioctyl-fluorene)-alt-5,5 -(4',7'-di-2-thienyl-2',1',3',-benzothiadiazole) (PFDTBT), was prepared. The introduction of ZnO nanoparticles with perfect wurtzite crystal character into PFDTBT makes the resulted single-layer photovoltaic device to perform a significant photovoltaic response. Among the tested devices, the best performance is observed for that containing 60 wt% of ZnO nanoparticles, which has a photocurrent density of 1.17 mu A/cm(2), an open circuit voltage of 0.81 V. a fill factor of 0.09 and a power conversion efficiency of 0.009%. The results show that the polyfluorene derivatives/ZnO nanoparticles hybrid composites are excellent fluorescence and photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved.

Near-infrared luminescent xerogel materials covalently bonded with ternary lanthanide [Er(III), Nd(III), Yb(III), Sm(III)] complexes

A beta-diketone ligand 4,4,5,5,5-pentafluoro-1-(2-naphthyl)-1,3-butanedione (Hpfnp), which contains a pentafluoroalkyl chain, was synthesized as the main sensitizer for synthesizing new near-infrared (NIR) luminescent Ln(pfnp)(3)phen (phen = 1,10-phenanthroline) (Ln = Er, Nd, Yb, Sm) complexes. At the same time, a series of lanthanide complexes covalently bonded to xerogels by the ligand 5-(N,N-bis-3-(triethoxysilyl)propyl)ureyl-1,10-phenanthroline (phen-Si) were synthesized in situ via a sol-gel process. [The obtained materials are denoted as xerogel-bonded Ln complexes (Ln = Er, Nd, Yb, Sm).] The single crystal structures of the Ln(pfnp) 3phen complexes were determined.

Preparation and photovoltaic property of a new polyfluorene derivative/ZnO nanoparticles hybrid composites

A new kind of polyfluorene copolymers, poly(2,7-(9,9-dioctyl-fluorene)-alt-5,5 -(4',7'-di-2-thienyl-2',1',3',-benzothiadiazole) (PFDTBT), was prepared. The introduction of ZnO nanoparticles with perfect wurtzite crystal character into PFDTBT makes the resulted single-layer photovoltaic device to perform a significant photovoltaic response. Among the tested devices, the best performance is observed for that containing 60 wt% of ZnO nanoparticles, which has a photocurrent density of 1.17 mu A/cm(2), an open circuit voltage of 0.81 V. a fill factor of 0.09 and a power conversion efficiency of 0.009%. The results show that the polyfluorene derivatives/ZnO nanoparticles hybrid composites are excellent fluorescence and photovoltaic materials.