Preferred growth of nanocrystalline silicon in boron-doped nc-Si : H Films

Preferred growth of nanocrystalline silicon (nc-Si) was first found in boron-doped hydrogenated nanocrystalline (nc-Si:H) films prepared using plasma-enhanced chemical vapor deposition system. The films were characterized by high-resolution transmission electron microscope, X-ray diffraction (XRD) spectrum and Raman Scattering spectrum. The results showed that the diffraction peaks in XRD spectrum were at 2theta approximate to 47degrees and the exponent of crystalline plane of nc-Si in the film was (220). A considerable reason was electric field derived from dc bias made the bonds of Si-Si array according to a certain orient. The size and crystalline volume fraction of nc-Si in boron-doped films were intensively depended on the deposited parameters: diborane (B2H6) doping ratio in silane (SiH4), silane dilution ratio in hydrogen (H-2), rf power density, substrate's temperature and reactive pressure, respectively. But preferred growth of nc-Si in the boron-doped nc-Si:H films cannot be obtained by changing these parameters. (C) 2004 Elsevier Ltd. All rights reserved.

Time-resolved photoluminescence studies of AlInGaN alloys

We study the two samples of AIInGaN, i.e., 1-mum GaN grown at 1030degreesC on the buffer and followed by a 0.6-mum-thick epilayer of AIInGaN under the low pressure of 76 Torr and the AIInGaN layer deposited directly on the buffer layer without the high-temperature GaN layer, by temperature-dependent photoluminescence (PL) spectroscopy and picosecond time-resolved photoluminescence (TRPL) spectroscopy. The TRPL signals of both the samples were fitted well as a stretched exponential decay at all temperatures, indicating significant disorder in the material. We attribute the disorder to nanoscale quantum dots or discs of high indium concentration. Temperature dependence of dispersive exponent beta shows that the stretched exponential decay of the two samples comes from different mechanisms. The different depths of the localization potential account for the difference, which is illustrated by the results of temperature dependence of radiative recombination lifetime and PL peak energy.

Localized exciton dynamics in AlInGaN alloy

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved PL (TRPL) at various temperatures. The fast red-shift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/,tau)13], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed QDs or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent beta on temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered QDs. Furthermore, the localized states are found to have 0D density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.

An adaptive controller for a class of nonlinear system using direction basis function

For a class of nonlinear dynamical systems, the adaptive controllers are investigated using direction basis function (DBF) in this paper. Based on the criterion of Lyapunov' stability, DBF is designed which guarantees that the output of the controlled system asymptotically tracks the reference signals. Finally, the simulation shows the good tracking effectiveness of the adaptive controller.

Set invariance in control

The properties of positively invariant sets are involved in many different problems in control theory, such as constrained control, robustness analysis, synthesis and optimization. In this paper we provide an overview of the literature concerning positively invariant sets and their application to the analysis and synthesis of control systems.

土丘陵沟壑区植被恢复过程中的土壤抗蚀与细沟侵蚀演变

对黄土丘陵沟壑区安塞纸坊沟和县南沟、延安燕沟3个流域不同恢复年限的植物群落的土壤抗蚀性和侵蚀程度进行了研究。对12个土壤抗蚀性指标进行主成分分析表明,土壤抗蚀性(主成分综合指数)强弱为灌木群落阶段>多年生草本和蒿类群落阶段>一二年生草本群落阶段,与一二年生草本群落阶段相比,灌木群落阶段与多年生草本和蒿类群落阶段的土壤抗蚀性分别增加了362.29%～673.33%和574.71%～930.00%;野外调查结果分析表明,随着植被的恢复演替,土壤侵蚀量呈现明显的下降趋势,灌木群落阶段的土壤侵蚀量仅为演替初期的1.42%～5.59%;通过回归分析,土壤侵蚀量和水稳性团聚类因子,以及有机质含量之间分别存在极显著与显著相关关系,鉴于土壤分析的易获性,可选择>0.5mm水稳性团聚体与有机质含量作为反映土壤侵蚀程度的指标。

迷宫流道转角对灌水器水力性能的影响

为研究齿形、梯形以及矩形流道转角变化对水力性能的影响,采用Fluent软件对不同形状下不同转角的流道进行了数值模拟。研究结果表明:当其他条件相同时,转角的变化与流量系数、流态指数呈负相关,其变化对梯形流道灌水器的流量系数影响最大,最多下降了19.03%,齿形流道次之,下降了10.14%,矩形流道是梯形流道转角角度增加的延伸,具有相同的水力性能变化规律;随着角度的增加,梯形流道总的局部水头损失系数最多增加了32.5%,而齿形流道总的局部水头损失系数最多增加了23.4%,变化都很明显;压力较高时,摩阻系数基本保持不变,流体为紊流状态。

基于DBFNN的推设及其在电力系统励磁控制中的应用

本文采用后推设计算法为一类严格反馈系统设计了基于方向基函数神经网络(DBFNN)的自适应控制器.在后推算法中的每步都引入一积分型的Lyapunov函数来设计一个虚拟控制器,并在最后一步为闭环系统综合设计了神经网络控制器.网络权值的调整基于所选择的Lyapunov函数,于是设计方案能保证整个闭环系统是最终一致有界的.把所设计控制方案用于带有未知参数和外部干扰的电力系统励磁控制中.仿真结果表明了所设计控制器的有效性.

Growth and photoluminescence of InAlGaN films

Two quaternary InAlGaN films were grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire (0001) substrates with and without high-temperature GaN interlayer, respectively. The structural and optical properties of the quaternary films were investigated by high-resolution X-ray diffraction (HRXRD), high-resolution electron microscopy (HREM), temperature-dependent photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL) spectroscopy. According to the HRXRD and PL results, it is demonstrated that two samples have the same crystal quality. The TRPL signals of both samples were fitted well as a stretched exponential decay from 14 K to 250 K, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-section HREM measurement further proves that there exist disorder quantum nanostructures in the quaternary. By investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical properties of AIInGaN quaternary alloys

Carrier recombination dynamics in AlInGaN alloy has been studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL). The fast redshift of PL peak energy is observed and well fitted by a physical model considering the thermal activation and transfer processes. This result provides evidence for the exciton localization in the quantum dot (QD)-like potentials in our AlInGaN alloy. The TRPL signals are found to be described by a stretched exponential function of exp[(-t/tau)(beta)], indicating the presence of a significant disorder in the material. The disorder is attributed to a randomly distributed quantum dots or clusters caused by indium fluctuations. By studying the dependence of the dispersive exponent 8 on the temperature and emission energy, we suggest that the exciton hopping dominate the diffusion of carriers localized in the disordered quantum dots. Furthermore, the localized states are found to have OD density of states up to 250 K, since the radiative lifetime remains almost unchanged with increasing temperature.

Nanoadhesion of a Power-Law Graded Elastic Material

The Dugdale-Barenblatt model is used to analyze the adhesion of graded elastic materials at the nanoscale with Young's modulus E varying with depth z according to a power law E = E-0(z/c(0))(k) (0 < k < 1) while Poisson's ratio v remains a constant, where E-0 is a referenced Young's modulus, k is the gradient exponent and c(0) is a characteristic length describing the variation rate of Young's modulus. We show that, when the size of a rigid punch becomes smaller than a critical length, the adhesive interface between the punch and the graded material detaches due to rupture with uniform stresses, rather than by crack propagation with stress concentration. The critical length can be reduced to the one for isotropic elastic materials only if the gradient exponent k vanishes.

Dynamic behaviors of mode III interfacial crack under a constant loading rate

In an earlier study on intersonic crack propagation, Gao et al. (J. Mech. Phys. Solids 49: 2113-2132, 2001) described molecular dynamics simulations and continuum analysis of the dynamic behaviors of a mode II dominated crack moving along a weak plane under a constant loading rate. The crack was observed to initiate its motion at a critical time after the onset of loading, at which it is rapidly accelerated to the Rayleigh wave speed and propagates at this speed for a finite time interval until an intersonic daughter crack is nucleated at a peak stress at a finite distance ahead of the original crack tip. The present article aims to analyze this behavior for a mode III crack moving along a bi-material interface subject to a constant loading rate. We begin with a crack in an initially stress-free bi-material subject to a steadily increasing stress. The crack initiates its motion at a critical time governed by the Griffith criterion. After crack initiation, two scenarios of crack propagation are investigated: the first one is that the crack moves at a constant subsonic velocity; the second one is that the crack moves at the lower shear wave speed of the two materials. In the first scenario, the shear stress ahead of the crack tip is singular with exponent -1/2, as expected; in the second scenario, the stress singularity vanishes but a peak stress is found to emerge at a distance ahead of the moving crack tip. In the latter case, a daughter crack supersonic with respect to the softer medium can be expected to emerge ahead of the initial crack once the peak stress reaches the cohesive strength of the interface.

Critical behavior of multifragmentation in finite nuclei and extraction of critical exponents

Using a phenomenological asymmetric nuclear equation of state, we obtained pressure-density isotherms of the finite nucleus Sn-112 simulated in r-space and in p-space and constructed the nuclear fragments by using the coalescence model. After correlatively analysing the fragments, the signal of critical behavior has been found and critical exponents were also extracted.

迷宫流道转角对灌水器抗堵塞性能的影响

以转角分别为45.0°、60.0°、67.5°和75.0°的齿形流道灌水器为研究对象,应用CFD流场速度数值分析、PIV颗粒运动轨迹线和速度观测对比以及浑水抗堵塞测试相结合的方法,研究了转角对灌水器水力性能和抗堵塞能力的影响。结果表明转角与流量系数及流态指数均呈负相关关系,而灌水器的抗堵塞能力随着转角的增加呈下降趋势。综合分析转角对水力性能和抗堵塞性能的影响,提出迷宫流道结构灌水器的合理转角为60.0°。