Measurement of Be-10 in air filters using BeF- ions from BaBeF4

IEECAS SKLLQG

Radiosensitivity of hepatoma cell lines and human normal liver cell lines exposed in vitro to carbon ions and argon ions at the HIRFL

Human hepatoma (SMMC-7721) and normal liver (L02) cells were irradiated with c-rays, 12C6+ and 36Ar18+ ion beams at the Heavy Ion Research Facility in Lanzhou (HIRFL). By using the Calyculin-A induced premature chromosome condensation technique, chromatid-type breaks and isochromatid-type breaks were scored separately. Tumor cells irradiated with heavy ions produced a majority of isochromatid break, while chromatid breaks were dominant when cells were exposed to c-rays. The relative biological effectiveness (RBE) for irradiation-induced chromatid breaks were 3.6 for L02 and 3.5 for SMMC-7721 cell lines at the LET peak of 96 keVlm 1 12C6+ ions, and 2.9 for both of the two cell lines of 512 keVlm 1 36Ar18+ ions. It suggested that the RBE of isochromatid-type breaks was pretty high when high-LET radiations were induced. Thus we concluded that the high production of isochromatid-type breaks, induced by the densely ionizing track structure, could be regarded as a signature of high-LET radiation exposure.

Micronuclei induction in human lymphocytes induced by carbon ions exposion along the penetrate depth of ions in water

Here we used cytokinesis-block micronucleus assay to measure the biological response along the penetrate depth of ions in water in human lymphocytes exposed to 100 MeV/u incident carbon ions in vitro. Polyethylene shielding was used to change the penetration depth of ions in water. A quantitative biological response curve was generated for micronuclei induction. The results showed a marked increase with the penetrate depth of ions in water in the micronuclei formation, which was consistent with a linearenergy- transfer dependent increase in biological effectiveness. The dose–response relationship for MN information was different at different penetrate depth of ions in water, at the 6 and 11.2 mm penetrate depth of ions in water, the dose–response relationships for the micronucleus frequencies induced by carbon ions irradiation were linear; while it was power function at 17.1 mm penetrate depth.

Experimental study on heavy ion single event effects in SOI SRAMs

Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and space applications. The use of SOI has been motivated by the full dielectric isolation of individual transistors, which prevents latch-up. The sensitive region for charge collection in SOI technologies is much smaller than for bulk-silicon devices potentially making SOI devices much harder to single event upset (SEU). In this study, 64 kB SOI SRAMs were exposed to different heavy ions, such as Cu, Br, I, Kr. Experimental results show that the heavy ion SEU threshold linear energy transfer (LET) in the 64 kB SOI SRAMs is about 71.8 MeV cm(2)/mg. Accorded to the experimental results, the single event upset rate (SEUR) in space orbits were calculated and they are at the order of 10(-13) upset/(day bit).

The influence of the microstructure evolution on the surface morphology in the annealing process of helium-implanted spinel

Single-crystalline spinel (MgAl2O4) specimens were implanted with helium ions of 100 keV at three successively increasing fluences of (0.5, 2.0 and 8.0) x 10(16) ions/cm(2) at room temperature. The specimens were subsequently annealed in vacuum at different temperatures ranging from 500 to 1100 degrees C. Different techniques, including Fourier transformed infrared spectroscopy (FTIR), thermal desorption spectrometry (TDS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to investigate the specimens, It was found that the absorbance peak in the FTIR due to the stretching vibration of the Al-O bond shifts to smaller wave numbers with increasing fluence, shifting back to larger wave numbers with an increase of annealing temperature. The absorbance peak shift has a linear relationship with the fluence increase in the as-implanted state, while it does not have a linear relationship with the fluence increase after the annealing process. Surface deformation occurred in the specimens implanted with fluences of 2.0 and 8.0 x 10(16) ions/cm(2) in the annealing process. The phenomena described above can be attributed to differences in defect formation in the specimens. (C) 2008 Elsevier B.V. All rights reserved.

Cross sections for transfer ionization in ion-helium collisions

A simple model has been developed within the independent-particle model (IPM) based on the Bohr-Lindhard model and classical statistical model. Cross sections for transfer ionization of helium by ions A(q+) (q = 1-3) are calculated for impact energies between 10 and 6000 keV/u. The calculated cross sections are in good agreement with the experimental data of helium by He(1-2)+ and Li(1-3)+.

Annealing effects in silicon implanted with helium

Silicon samples were implanted with helium and analyzed by atomic force microscopy (AFM) and Raman spectroscopy before and after annealing in the range of 523-1273 K. After annealing at 523 K, the amorphous area induced by He-ion implantation at room temperature was partially recovered and grain sizes became larger. The surface morphology was analyzed through AFM measurements and it was observed that root mean square of the surface roughness alters upwards and then downwards with annealing temperature. (C) 2008 Elsevier B.V. All rights reserved.

Studies on advantages of heavy ions in radiotherapy compared with gamma-rays

Hepatoma and melanoma cells were exposed to C-12(6+) beams generated by HIRFL facility and gamma-rays and the cell response was studied by colony assays as well as the analysis of RBE of carbon ions was evolved. The survival curves of cells irradiated by heavy ions were different from those of cells irradiated by gamma-rays. And two kinds of cell showed the obvious discrepancy in response to the photon and ion irradiation. The results showed that heavy ions have special physical properties and mighty potency to kill cell in both single and fractional irradiation meanwhile it can kill tumor cells with high radioresistance more efficiently. When involved in clinical therapy, heavy ions will enhance the therapy efficiency and decrease the suffering of patients because it can impair the repair for sublethal damage of cells which can lead to fewer irradiation fractions.

Damage accumulation in gallium nitride irradiated with various energetic heavy ions

In this work a study of damage production in gallium nitride via elastic collision process (nuclear energy deposition) and inelastic collision process (electronic energy deposition) using various heavy ions is presented. Ordinary low-energy heavy ions (Fe+ and Mo+ ions of 110 keV), swift heavy ions (Pb-208(27+) ions of 1.1 MeV/u) and slow highly-charged heavy ions (Xen+ ions of 180 keV) were employed in the irradiation. Damage accumulation in the GaN crystal films as a function of ion fluence and temperature was studied with RBS-channeling technique, Raman scattering technique, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). For ordinary low-energy heavy ion irradiation, the temperature dependence of damage production is moderate up to about 413 K resulting in amorphization of the damaged layer. Enhanced dynamic annealing of defects dominates at higher temperatures. Correlation of amorphization with material decomposition and nitrogen bubble formation was found. In the irradiation of swift heavy ions, rapid damage accumulation and efficient erosion of the irradiated layer occur at a rather low value of electronic energy deposition (about 1.3 keV/nm(3)),. which also varies with irradiation temperature. In the irradiation of slow highly-charged heavy ions (SHCI), enhanced amorphization and surface erosion due to potential energy deposition of SHCI was found. It is indicated that damage production in GaN is remarkably more sensitive to electronic energy loss via excitation and ionization than to nuclear energy loss via elastic collisions.

Defect production in silicon carbide irradiated with Ne and Xe ions with energy of 2.3 MeV/amu

In the present work specimens of mono-crystalline silicon carbide (4H polytype) were irradiated to three successively increasing ion fluences ranging from 7.2 x 10(14) to 6.0 x 10(16) ions/cm(2) (corresponding to the peak displacement damage of 1, 4 and 13 dpa) with Ne and Xe ions respectively with the energy of 2.3 MeV/amu. The irradiated specimens were subsequently annealed at temperatures of 1173 and 1273 K. Defect structure was investigated with transmission electron microscopy (TEM) using a cross-sectional specimen preparation technique. The typical microstructures of the annealed specimens irradiated with Ne or Xe ions to high fluences are characterized by small gas bubbles in high concentration in the peak damage region and black dots and dislocation loops (located in the basal plane) in a shallower and broader depth region. Larger dislocation loops were observed in the Xe-ion irradiated specimen than in the Ne-ion irradiated specimen at the same peak damage level. The enhanced formation of dislocation loops in the case of Xe-ion irradiation is understandable by assuming stronger inclination of heavier inert-gas atoms to occupy substitute site in the peak damage region.

Microstructural evolution in silicon implanted with chlorine ions

In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 x 10(15), 5 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2) and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microscopy (TEM) in both the plane-view and the cross-sectional view. The implanted layer was amorphized after chlorine implantation even at the lowest ion fluence, while re-crystallization of the implanted layer occurs on subsequent annealing at 1073 K. In the annealed specimens implanted above the lowest fluence three layers along depth with different microstructures were found, which include a shallow polycrystalline porous layer, a deeper single-crystalline layer containing high density of gas bubbles, a well separated deeper layer composed of dislocation loops in low density. With increasing ion fluence the thickness of the porous polycrystalline layer increases. It is indicated that chlorine can suppress the epitaxial re-crystallization of implanted silicon, when the implant fluence of Cl ions exceeds a certain level.