72 resultados para Institute for Numerical Analysis (U.S.)


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Tension Leg Platform (TLP) is a typical compliant offshore structure for oil exploitation in deep water. Most of the existing mathematical models for analyzing the dynamic response of TLP are based on explicit or implicit assumptions that displacements (translations and rotations) are small magnitude. Herein a theoretical method for analyzing the nonlinear dynamic behavior of TLP with finite displacement is developed, in which multifold nonlinearities are taken into account, i.e. finite displacement, coupling of the six degrees of freedom, instantaneous position, instantaneous wet surface, free surface effects and viscous drag force. Using this theoretical model, we perform the numerical analysis of dynamic response of a representative TLP. The comparison between the degenerative linear solution of the proposed nonlinear model and the published one shows good agreements. Furthermore, numerical results are presented which illustrate that nonlinearities exert a distinct influence on the dynamic responses of the TLP.

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Vortex dislocations in wake-type flow induced by three types of spanwise disturbances superimposed on an upstream velocity profile are investigated by direct numerical simulations. Three distinct modes of vortex dislocations and flow transitions have been found. A local spanwise exponential decay disturbance leads to the appearance of a twisted chainlike mode of vortex dislocation. A stepped spanwise disturbance causes a streamwise periodic spotlike mode of vortex dislocation. A spanwise sinusoidal wavy disturbance with a moderate waviness causes a strong unsteadiness of wake behavior. This unsteadiness starts with a systematic periodic mode of vortex dislocation in the spanwise direction followed by the spanwise vortex shedding suppressed completely with increased time and the near wake becoming a steady shear flow. Characteristics of these modes of vortex dislocation and complex vortex linkages over the dislocation, as well as the corresponding dynamic processes related to the appearance of dislocations, are described by examining the variations of vortex lines and vorticity distribution. The nature of the vortex dislocation is demonstrated by the substantial vorticity modification of the spanwise vortex from the original spanwise direction to streamwise and vertical directions, accompanied by the appearance of noticeable vortex branching and complex vortex linking, all of which are produced at the locations with the biggest phase difference or with a frequency discontinuity between shedding cells. The effect of vortex dislocation on flow transition, either to an unsteady irregular vortex flow or suppression of the Kaacutermaacuten vortex shedding making the wake flow steady state, is analyzed. Distinct similarities are found in the mechanism and main flow phenomena between the present numerical results obtained in wake-type flows and the experimental-numerical results of cylinder wakes reported in previous studies.

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在非平衡流相似律现有研究成果的基础上,通过对化学反应特征时间、具体流场区域热化学状态、辐射输运方程的分析,并结合若干典型算例,讨论双体碰撞反应的非平衡尺度效应模拟参数ρ_∞L对高空高超声速飞行器全流场适用的条件.结果表明,当模拟参数ρ_∞L值低于一定范围时,在高超声速流场非平衡区中离解非平衡起主导作用,此时模拟参数ρ_∞L不仅对全流场的无量纲参数分布有效,而且对流场电离特性、模型气动热特性、分子光谱范围的驻点辐射谱强度都是有效的.模拟参数ρ_∞L的有效性与自由流速度、不同类物理量和流场不同区域均相关:当自由流速度增加时,对全场有效的ρ_∞L要求ρ_∞L值减小;与无量纲压力、密度和温度相比,对化学组元特别是离子组元分布有效的ρ_∞L所要求的ρ_∞L值更小;与模型头部区相比,在身部区有效的ρ_∞L所要求的ρ_∞L值更小.

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考虑到空间滤波器系统在激光装置中的稳定性要求,分析了影响稳定性的各种因素。对现行装置中的SF4空间滤波器系统进行振动模态测试,初步确定系统的工作状况,并结合振动理论明确系统稳定性的设计参数。利用有限元软件ANSYS对空间滤波器系统及相关的设计进行仿真验证计算。结果表明:SF4系统的一阶固有频率达到83Hz,与实验结果相符合,满足系统稳定性的要求;在系统中引入支撑不但能有效增加系统的刚度,同时能转移系统的振型;系统基础支撑平台的选择要求平台独立,并且选择较低的高度以便于控制上层光学元件的变形;在系统中的引入

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Surface texturization is an effective way to enhance the absorption of light for optoelectronic devices but it also aggravates the surface recombination by enlarging the surface area. In order to evaluate the influence of texture structures on the surface recombination, an effective surface recombination velocity is defined which is assumed to have an equivalent recombination effect on a flat surface. Based on numerical and analytical calculation, the dependences of effective surface recombination on the pattern geometry, the surface recombination velocity, and the diffusion length are analyzed.

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The choice of the etching depth for semiconductor microcavities is a compromise between a high Q factor and a difficult technique in a practical fabricating process. In this paper, the influences of the etching depth on mode Q factors for mid-infrared quantum cascade microcylinder and microsquare lasers around 4.8 and 7.8 mu m are simulated by three-dimensional (3D) finite-difference time-domain (FDTD) techniques. For the microcylinder and the microsquare resonators, the mode Q factors of the whispering-gallery modes (WGMs) increase exponentially and linearly with the increase in the etching depth, respectively Furthermore, the mode Q factors of some higher order transverse WGMs may be larger than that of the fundamental transverse WGM in 3D microsquares. Based on the field distribution of the vertical multilayer slab waveguide and the mode Q factors versus the etching depth, the necessary etching depth is chosen at the position where the field amplitude is 1% of the peak value of the slab waveguide. In addition, the influences of sidewall roughness on the mode Q factors are simulated for microsquare resonators by 2D FDTD simulation. (C) 2009 Optical Society of America

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We report a numerical analysis of various types of disorder effects on self-collimated beam in two-dimensional photonic crystal. Finite-difference time-domain (FDTD) method is used to simulate the process by using a pulse propagation technique. The position disorders along the directions parallel and perpendicular to the incidence are considered. We show that random disorder along the perpendicular direction will have a lesser effect on the performance of the dispersion waveguides than those along the parallel direction. Furthermore, the self-collimation waveguide (SCW) has new characteristics when compared with the photonic crystal line defect waveguide. (c) 2006 Elsevier B.V. All rights reserved.

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The mode wavelength and quality factor (Q-factor) for resonant modes in optical equilateral triangle resonators (ETR's) are calculated by the finite-difference time-domain (FDTD) technique and the Pade approximation, For an ETR with the side length of 3 mu m and the refractive index of 3.2, we get the mode wavelength interval of about 70 nm and the Q-factor of the fundamental mode over 10(3), The results show that the ETR is suitable to realize single-mode operation, and that the radiation loss in the corner regions of ETR is rather low, In addition, the numerical results of the mode wavelength agree very well with our analytical formula.

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Temperature-dependent modulation characteristics of 1.3 mu m InAs/GaAs quantum dot (QD) lasers under small signals have been carefully studied at various bias currents. Based on experimental observations, it is found that the modulation bandwidth significantly increases when excited state (ES) lasing emerges at high temperature. This is attributed to additional photons emitted by ES lasing which contribute to the modulation response. A rate equation model including two discrete electron energy levels and the level of wetting layer has been used to investigate the temperature-dependent dynamic behavior of the QD lasers. Numerical investigations confirm that the significant jump for the small signal modulation response is indeed caused by ES photons. Furthermore, we identify how the electron occupation probabilities of the two discrete energy levels can influence the photon density of different states and finally the modulation rate. Both experiments and numerical analysis show that the modulation bandwidth of QD lasers at high temperature can be increased by injecting more carriers into the ES that has larger electron state degeneracy and faster carrier's relaxation time than the ground state.

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Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.

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Fiber Bragg grating (FBG) sensor for monitoring the electromagnetic strain in a low temperature superconducting (LTS) magnet was studied. Before used to LTS magnet strain sensing, the strain response of the sensor with 1.54-mu m wavelength at liquid helium was experimentally studied. It was found that the wavelength shift showed good linearity with longitudinal applied loads and the strain sensitivity is constant at 4.2 K. And then, the hoop strain measurement of a LTS magnet was carried out on the basis of measured results. Furthermore, the finite element method (FEM) was used to simulate the magnet strain. The difference between the experimental and numerical analysis results is very small.

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The microregion approximation explicit finite difference method is used to simulate cyclic voltammetry of an electrochemical reversible system in a three-dimensional thin layer cell with minigrid platinum electrode. The simulated CV curve and potential scan-absorbance curve were in very good accordance with the experimental results, which differed from those at a plate electrode. The influences of sweep rate, thickness of the thin layer, and mesh size on the peak current and peak separation were also studied by numerical analysis, which give some instruction for choosing experimental conditions or designing a thin layer cell. The critical ratio (1.33) of the diffusion path inside the mesh hole and across the thin layer was also obtained. If the ratio is greater than 1.33 by means of reducing the thickness of a thin layer, the electrochemical property will be far away from the thin layer property.