Behavior of Pentacene Initial Nucleation on Various Dielectrics and Its Effect on Carrier Transport in Organic Field-Effect Transistor

The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm(2)/Vs with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm(2)/Vs and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.

Homogeneous Epitaxial Growth of N,N '-di(n-butyl)quinacridone Thin Films on Ag(110)

The structural evolution of the ordered N-N' dibutyl-substituted quinacridone (QA4C) multilayers (3 MLs) has been monitored in situ and in real time at various substrate temperatures using low energy electron diffraction (LEED) during organic molecular beam epitaxy (MBE). Experimental results of LEED patterns clearly reveal that the structure of the multilayer strongly depends on the substrate temperature. Multilayer growth can be achieved at the substrate temperatures below 300 K, while at the higher temperatures we can only get one ordered monolayer of QA4C. Two kinds of structures, the commensurate and incommensurate one, often coexist in the QA4C multilayer. With a method of the two-step substrate temperatures, the incommensurate one can be suppressed, and the commensurate, on the other hand, more similar to the (001) plane of the QA4C bulk crystal, prevails with the layer of QA4C increasing to 3 MLs. The two structures in the multilayers are compressed slightly in comparison to the original ones in the first monolayer.

Luminescence properties of Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors prepared by spray pyrolysis process

Starting from metal nitrate aqueous solutions and H3BO3, Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors were synthesized by spray pyrolysis followed by annealing at high temperature. The obtained phosphor particles have spherical morphology with size in the range 0.5-2 mu m. Independent of the x values in Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors, the Eu3+ ion shows its characteristic D-5(0), (1)-F-7(J) (J = 0, 1, 2, 3, 4) transitions with D-5(0)-F-7(2) red emission (612 nm) as the most prominent group. The photoluminescence intensity of phosphors increases with the increase of x value in Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) due to an energy migration process like Gd3+-(Gd3+)(n)-Eu3+ that occurred in the host materials.

Synthesis and luminescent properties of europium (III) schiff base complexes covalently bonded to silica xerogels

A new kind of luminescent organic-inorganic hydrid material consisting of Eu(III)-schiff base complex covalently bonded to silica xerogel was synthesized via the sol-gel method using a Eu (N-propylene salicylimine ligand) complex modified with pendant triethoxysilane groups (Eu(III)(salenHSi)). The Eu(III)(salenHSi) complex is characterized by Fourier transform infrared (FT-IR) spectroscopy. Luminescent properties of the complex and the resulted hybrid silica xerogels have been investigated at room temperature.

Enhanced luminescence of gadolinium niobates by Bi3+ doping for field emission displays

Blue emitting GdNbO4: Bi3+ powder phosphors for field emission displays were prepared by a solid state reaction. Both photoluminescence and cathodoluminescence properties of the materials were investigated. GdNbO4 itself shows only a very weak luminescence in the blue spectral region. By doping Bi3+ in GdNbO4, the luminescence intensity was improved greatly. The emission spectrum of the GdNbO4: Bi3+ consists of a broad band with maximum at 445 nm (lifetime = 0.74 mu s; CIE chromaticity coordinates: x = 0.1519 and y = 0. 1196) for both UV and low voltage (1-7 kV) cathode ray excitation. In GdNbO4:Bi3+ phosphors, the energy transfer from NbO43- to activator Bi3+ occurred.

Sol-gel deposition and luminescence properties of LiYF4 : Tb3+ thin films

Tb3+-doped LiYF4 films were deposited on quartz glass by a simple sol-gel method. X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), photoluminescence spectra, and lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 300 degrees C and fully crystallized at 400 degrees C. AFM and FESEM images of singly coated LiY0.95Tb0.05F4 annealed at 400 degrees C indicated that the film is uniform and crack-free films with average grain size of 90 nm, root mean square roughness of 11 nm and thickness of 120 nm. The doped Tb3+ ions showed its characteristic emission in crystalline LiYF4 films, i.e., D-5(3), F--7(4)J (J = 6, 5, 4, 3) emissions. The optimum doping concentration of the Tb3+ was determined to be 5.0 mol% of Y3+ in LiYF4 films.

Long lasting phosphorescence in Eu3+ and Ce3+ co-doped strontium borate glasses

Long lasting phosphorescence (LLP) was observed in Eu2+, Ce3+ co-doped strontium borate glasses prepared under the reducing atmosphere due to the emission of both Eu2+ and Ce3+. The methods of photoluminescence, thermoluminescence and phosphorescence were used to study the samples, and possible mechanism was suggested. The co-doping of Ce3+ ions poisoned the phosphorescence emission of Eu2+ because of the competition to obtain the trapped electron. The phosphorescence of Ce3+ in the sample decays more quickly than that of Eu2+, which is suggested for the reason that the emission energy of Ce3+ is higher or the distance between Ce3+ and electron traps of the glasses is longer.

Efficient organic electroluminescent devices based on an organosamarium complex

Several organic electroluminescent devices with different device structures were fabricated based on an organosamarium complex Sm(HFNH)(3)phen[HFNH=4, 4, 5, 5, 6, 6, 6-heptafluoro-l-(2-naphthvl)hexane-1, 3-dione; phen=1, 10-phenanthroline] as emitter. Their electroluminescent properties were investigated in detail. Although the devices with the optimal structure ITO/TPD (50nm)/ Sm(HFNH)(3)phen (xwt%):CBP (50nm)/BCP (20nm)/AIQ (30nm)/LiF (1 nm),/Al (200nm) show high brightness (more than 400cd/m(2)) and high current efficiency (about 1 cd/A), there are emissions from CBP, BCP and even from AIQ existing in the electroluminescence (EL) spectra besides emission from Sm(HFNH)(3)Phen. The reason to this was discussed. The device with the structure ITO/TPD (50 nm)/ Sm(HFNH)(3)phen (50 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm) exhibits the maximum brightness of 118 cd/m(2) and current efficiency of 0.029 cd/A, and shows emissions from AIQ and Sm(HFNH)(3)phen at high voltages. However, with the BCP hole-block layer added, the device [ITO/TPD (50 nm)/Sm(HFNH)(3)phen (50 nm)/BCP (20 nm)/AIQ (30 nm)/LiF (1 nm)/Al (200 nm)] exhibits pure Sm3+ emission in 2 the EL spectra even at high voltages, with the maximum current efficiency of 0.29cd/A and brightness of 82cd/m(2)

Effect of silver nanoparticles on luminescent properties of europium complex in di-ureasil hybrid materials

Organic-inorganic hybrids containing luminescent lanthanide complex Eu(tta)(3)Phen (tta = thenoyltrifluoroaceton, phen = 1,10-phenanthroline) and silver nanoparticles have been prepared via mixing rare earth complex and nanoparticles with the precursors of di-ureasil using a sol-gel process. The obtained hybrid materials with transparent and elastomeric features were characterized by transmission electron microscope, solid-state Si-29 magic-angle spinning NMR spectra, diffuse reflectance, UV-visible absorption and photoluminescence spectroscopies. The effect of the silver nanoparticles on the luminescence properties was investigated. The experimental results showed that the luminescence intensity of the Eu(tta)(3)phen complex could be enhanced by less than ca. 9.5 nM of silver nanoparticles with the average diameter of 4 nm, and reached its maximum at the concentration of ca. 3.6 nM. Further increasing the concentration of the silver nanoparticles (> 9.5 nM) made the luminescence quenched. The enchancement and quench mechnism was discussed.

Structural characterization and property of in-situ synthesized AZ91-Mg2Si composite

A new-type Mg2Si composite was prepared with Mg-9Al-1Zn (AZ91) alloy and vermiculite as raw materials by melt infiltration method. The results show that the microstructure of composite consists of a large amount Of Mg2Si precipitates and a little amount of MgO embedded in alpha-Mg matrix. The Vickers hardness of the composite is obviously higher than that of matrix of AZ91 alloy. Moreover, the composite exhibits excellent compressive property. The ultimate compressive strength of the material is 290 MPa, the yield strength is 175 MPa, and the elongation is about 5%, which are higher than those of AZ91 alloy.