Frontal and cingulate gray matter volume reduction in heroin dependence: Optimized voxel-based morphometry

Aims: Repeated exposure to heroin, a typical opiate, causes neuronal adaptation and may result in anatomical changes in specific brain regions, particularly the frontal and limbic cortices. The volume changes of gray matter (GM) of these brain regions, ho

Reduction in microcystin concentrations in large and shallow lakes: Water and sediment-interface contributions

Blooms of cyanobacteria, or blue-greens, are known to produce chemicals, such as microcystins, which can be toxic to aquatic and terrestrial organisms. Although previous studies have examined the fate of microcystins in freshwater lakes, primary elimination pathways and factors affecting degradation and loss have not been fully explained. The goal of the present study was to explore sources of algal toxins and investigate the distribution and biodegradation of microcystins in water and sediment through laboratory and field analyses. Water and sediment samples were collected monthly from several locations in Lake Taihu from February 2005 to January 2006. Samples were analyzed for the presence of microcystin. Water and sediment were also used in laboratory studies to determine microcystin degradation rates by spiking environmental samples with known concentrations of the chemical and observing concentration changes over time. Some water samples were found to efficiently degrade microcystins. Microcystin concentrations dropped faster in water collected immediately above lake sediment (overlying water). Degradation in sediments was higher than in water. Based on spatial distribution analyses of microcystin in Lake Taihu, higher concentrations (relative to water concentrations) of the chemical were found in lake sediments. These data suggest that sediments play a critical role in microcystin degradation in aquatic systems. The relatively low levels of microcystins found in the environment are most likely due to bacterial biodegradation. Sediments play a crucial role as a source (to the water column) of bio-degrading bacteria and as a carbon-rich environment for bacteria to proliferate and metabolize microcystin and other biogenic toxins produced by cyanobacteria. These, and other, data provide important information that may be applied to management strategies for improvement of water quality in lakes, reservoirs and other water bodies. (C) 2007 Elsevier Ltd. All rights reserved.

Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?

It is studied whether there is any regular relationship between the yellow luminescence band and electron mobility of n-type GaN. For a series of GaN samples grown with the same Si doping, it is found that the electron mobility decreases with an increase of relative intensity of yellow luminescence, accompanied by an increase of edge dislocation density. Further research indicates that it is acceptors introduced by edge dislocations which lead to the concomitant changes of yellow luminescence and electron mobility. Similar changes are induced by Si doping in the n-type GaN samples with relatively low edge dislocation density. However, the relationship between the yellow luminescence and electron mobility of n-type GaN is not a simple one. A light Si doping may simultaneously increase yellow luminescence and electron mobility when Si doping plays a dominant role in reducing the carrier scattering. This means that even the intensity of yellow luminescence is often used as an indicator of material quality for GaN, it does not have any monotonous correlation with the electron mobility of GaN. (c) 2007 American Institute of Physics.

Photonic crystal distributed feedback quantum cascade laser fabricated with holographic technique

Electrically pumped, edge-emitting, singlemode operation of a two-dimensional photonic crystal distributed feedback (PCDFB) quantum cascade laser emitting at similar to 7.8 mu m is demonstrated. The two-beam holographic technique combined with wet-etching process is successfully used to de. ne a square-lattice PCDFB structure on the top grating layer of the laser. This simple PC fabrication method may open exciting opportunities for the wide application of PCDFB lasers.

Holographic fabricated photonic-crystal distributed-feedback quantum cascade laser with near-diffraction-limited beam quality

We demonstrate the fabrication and characterization of photonic-crystal distributed-feedback quantum cascade laser emitting at 4.7 mu m. The tilted rectangular-lattice PCDFB structure was defined using a multi-exposure of two-beam holographic lithography. The devices exhibit the near-diffraction-limited beam emission with the full width at half maximum of the far-field divergence angles about 4.5 degrees and 2.5 degrees for stripe widths of 55 mu m and 95 mu m, respectively. Single-mode emission with a side mode suppression ratio of approximate to 20 dB is achieved in the temperature range (80-210 K). The single-facet output power is above 1 W for a 95 mu m x 2.5 mm laser bar at 85 K in pulsed operation. (C) 2009 Optical Society of America

Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.

Research on improved methods of reduction of bend loss of silicon-on-insulator waveguides

Improved methods of reduction of bend loss of silicon-on-insulator waveguides were simulated and analyzed by means of effective index method (EIM) and two dimensional beam propagation method (2D-BPM). The simulation results indicate that two different methods, one of which are introducing an offset at the junction of two waveguides and the other is etching groove at the outside of bend waveguide, can decrease bend loss. And the later one is more effective. Meanwhile, experiments validate them. By etching groove, the insertion loss of bend waveguide of R = 16mm, transverse displacement 70mum was decreased 5dB. And its bend loss was almost eliminated.