1064nm与532nm激光对电子束蒸发制备的HfO2／SiO2高反膜损伤比较

研究了电子束蒸发制备的HfO2／SiO2高反膜在1064nm与532nm激光辐照下的损伤行为。基频激光辐照时损伤形貌主要为节瘤缺陷喷溅留下的锥形坑。当能量密度较大时出现分层剥落；二倍频激光损伤主要是由电子缺陷引起的平底坑，辐照脉冲能量密度稍高时也会产生吸收性缺陷引起的锥形坑，但电子缺陷的损伤阈值更低；随着辐照脉冲能量密度的增大分层剥落逐渐成为主要的损伤形貌。分析认为，辐照激光波长的变化。引起吸收机制的变化从而导致了损伤阈值及损伤机制的差异。

三种不同后处理方式对ZrO_2薄膜性能的影响

采用有氧热处理、激光预处理和离子后处理三种方式对电子束蒸发(EBE)制备的单层ZrO_2薄膜进行了后处理,并分别对样品的光学性能和抗激光损伤阈值(LIDT)特性进行了研究。实验结果表明,热处理方式可以有效排除膜层内吸附的水气,弥补薄膜制备过程中的氧损失,使得光谱短移、吸收减小、损伤阈值增高;激光预处理过程可以在一定程度上减少缺陷、提高损伤阈值,但对膜层的光谱和吸收情况没有明显的改善作用;而离子后处理能够提高膜层的堆积密度、减少缺陷、降低吸收从而提高损伤阈值。由于三种方式处理机制不同,在实际应用中应根据膜层的性能选择合适的处理方式。

Electron injection by a nanowire in the bubble regime

The triggering of wave-breaking in a three-dimensional laser plasma wake (bubble) is investigated. The Coulomb potential from a nanowire is used to disturb the wake field to initialize the wave-breaking. The electron acceleration becomes more stable and the laser power needed for self-trapping is lowered. Three-dimensional particle-in-cell simulations were performed. Electrons with a charge of about 100 pC can be accelerated stably to energy about 170 MeV with a laser energy of 460 mJ. The first step towards tailoring the electron beam properties such as the energy, energy spread, and charge is discussed. (C) 2007 American Institute of Physics.

Precipitation of Ge nanoparticles from GeO2 glasses in transmission electron microscope

We show, using spatially resolved energy loss spectroscopy in a transmission electron microscopy (TEM), that GeO2 and GeO2-SiO2 glasses are extremely sensitive to high energy electrons. Ge nanoparticles can be precipitated in GeO2 glasses efficiently by the high-energy electron beam of a TEM. This is relevant to TEM characterization of luminescent Ge nanoparticles in silicate glasses, which may produce artificial results. (C) 2005 American Institute of Physics.

不同方法制备的Ta_2O_5薄膜光学性能和激光损伤阈值的对比分析

采用电子束蒸发(EBE)和离子束溅射(IBS)制备了不同的Ta_2O_5薄膜,同时对电子束蒸发制备的薄膜进行了退火处理。研究了制备的Ta_2O_5薄膜的光学性能、激光损伤阈值(LIDT)、吸收、散射、粗糙度、微缺陷密度和杂质含量。结果表明,退火可使电子束蒸发制备的薄膜的光学性能得到改善,接近离子束溅射的薄膜的光学性能。电子束蒸发制备的薄膜的损伤阈值较低的主要原因在于吸收大,微缺陷密度和杂质含量高,而与薄膜的散射和粗糙度关系不大。退火后薄膜的吸收和微缺陷密度都明显降低,损伤阈值得到提高。退火后的薄膜损伤阈值仍然低于溅射得到的薄膜损伤阈值是因为退火并不能降低膜内的杂质含量,因此选用高纯度的蒸发膜料和减少电子束蒸发过程中的污染有可能进一步提高薄膜的损伤阈值。

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

Commissioning of electron cooling in CSRm

A new generation electron cooler has started operation in the heavy ion synchrotron CSRm which is used to increase the intensity of heavy ions. Transverse cooling of the ion beam after horizontal multi-turn injection allows beam accumulation at the injection energy. After optimization of the accumulation process an intensity increase in a synchrotron pulse by more than one order of magnitude has been achieved. In given accumulation time interval of 10 seconds, 108particles have been accumulated and accelerated to the final energy. The momentum spread after accumulation and acceleration in the 10−4 range has been demonstrated in six species of ion beams. Primary measurements of accumulation process varying with electron energy,electron beam current, electron beam profile, expansion factor and injection interval have been performed.The lifetimes of ion beams in the presence of electron beams were roughly measured with the help of DCCT signal.

COD by magnetic field in electron-cooling section and correction at CSR

Application of electron-cooling upgrades the quality of ion beams in the storage rings and brings new problems. The transverse magnetic field distorts the ion orbit while guiding the intense electron beam. The closed-orbit distortion should be and can be localized and controlled well inside the ring acceptance. This paper deals with the field in the e-cool section and concomitant COD of ion orbit and shows the correction scheme.

Commissioning of electron cooling in CSRe

The 400 MeV/u C-12(6+) ion beam was successfully cooled by the intensive electron beam near 1 A in CSRe. The momentum cooling time was estimated near 15 s. The cooling force was measured in the cases of different electron beam profiles, and the different angles between the ion beam and electron beam. The lifetime of the ion beam in CSRe was over 80 h. The dispersion in the cooling section was confirmed as positive close to zero. The beam sizes before cooling and after cooling were measured by the moving screen. The beam diameter after cooling was about 1 mm. The bunch length was measured with the help of the signals from the beam position monitor. The diffusion was studied in the absence of the electron beam.

Experimental investigation on the chaotic phenomena in the wake of a natural thermal convection flow

Chaotic phenomena in the wake of thermal convection flow fields above a heating flat plate were investigated experimentally. A newly developed electron beam fluorescence technique (EBF) was used to simultaneously measure density fluctuation at 7 points in a cross section above the plate. Correlation dimensions, intermittence coefficients, Fourier spectrum have been obtained for different Grashof numbers. Spatial distribution of correlation dimensions are presented. The experimental result shows that there is a certain relationship between the density fluctuation and the Gr number. And time-spacial characteristic of chaos evolution is also given.

A Breakdown Criterion of Free Molecular Flows and an Optimum Analysis of EBPVD

Two important issues in electron beam physical vapor deposition (EBPVD) are addressed. The first issue is a validity condition of the classical cosine law widely used in the engineering context. This requires a breakdown criterion of the free molecular assumption on which the cosine law is established. Using the analytical solution of free molecular effusion flow, the number of collisions (N-c) for a particle moving from an evaporative source to a substrate is estimated that is proven inversely proportional to the local Knudsen number at the evaporation surface. N-c = 1 is adopted as a breakdown criterion of the free molecular assumption, and it is verified by experimental data and DSMC results. The second issue is how to realize the uniform distributions of thickness and component over a large-area thin film. Our analysis shows that at relatively low evaporation rates the goal is easy achieved through arranging the evaporative source positions properly and rotating the substrate.

Relativistic laser channeling in plasmas for fast ignition

We report an experimental observation suggesting plasma channel formation by focusing a relativistic laser pulse into a long-scale-length preformed plasma. The channel direction coincides with the laser axis. Laser light transmittance measurement indicates laser channeling into the high-density plasma with relativistic self-focusing. A three-dimensional particle-in-cell simulation reproduces the plasma channel and reveals that the collimated hot-electron beam is generated along the laser axis in the laser channeling. These findings hold the promising possibility of fast heating a dense fuel plasma with a relativistic laser pulse.

激光功率密度对Al膜靶后表面快电子发射的影响

报道了在20 TW皮秒激光器上完成的p偏振激光与等离子体相互作用过程中产生的快电子的角分布和能谱测量结果.实验得到：当激光功率密度小于1017 W/cm^2时,电子发射没有明显定向性,在激光入射面内多峰发射;当激光功率密度大于1017 W/cm^2,小于1018 W/cm^2时,电子主要沿靶面法线方向发射;当激光功率密度达到相对论强度时,电子主要沿激光传播方向发射;激光功率密度未达到相对论强度时,靶后表面法线方向快电子能谱拟合平均温度符合共振吸收温度定标率;激光功率密度达相对论强度以上时,靶后表面法线方向