Suppression of ballistic electron transmission through a semiconductor II-structure by an external transverse electric field

We have conducted numerical studies of ballistic electron transport in a semiconductor II-structure when an external transverse electric field is applied. The device conductance as a function of electron energy and the strength of the transverse electric field is calculated on the basis of tight-binding Green's function formalism. The calculations show that a relatively weak electric field can induce very large decrease in the electron transmission across the structure. When the transverse electric field is sufficiently strong, electrons can hardly be transported through the device. Thus the performance of the device can be greatly improved for it is much easier to control electron transport through the device with an external transverse electric field.

Perpendicular-electric-field dependence of exciton binding energy studied by continuous-wave photoluminescence

The reduction of exciton binding energy induced by a perpendicular electric field in a stepped quantum well is studied. From continuous-wave photoluminescence spectra at 77 K we have observed an obvious blueshift of the exciton peak due to a spatially direct-to-indirect transition of excitons. A simple method is used to calculate the exciton binding energy while the inhomogeneous broadening is taken into account in a simple manner. The calculated result reproduces remarkably well the experimental observation.

DIRECT OBSERVATION FOR THE REDUCTION OF EXCITON BINDING-ENERGY INDUCED BY PERPENDICULAR ELECTRIC-FIELD

We experimentally study the effect of perpendicular electric field on the exciton binding energy using a specially designed step quantum well. From photoluminescence spectra at the temperature of 77 K, we have directly observed remarkable blueshift of the exciton peak due to the transition from spatially direct to spatially indirect excitons induced by electric field. (C) 1995 American Institute of Physics.

Effect of a step quantum well structure and an electric-field on the Rashba spin splitting

Spin splitting of conduction subbands in Al_(0.3)Ga_(0.7)As/GaAs/Al_xGa_(1-x)As/Al_(0.3)Ga_(0.7)As step quantum wells induced by interface and electric field related Rashba effects is investigated theoretically by the method of finite difference. The dependence of the spin splitting on the electric field and the well structure, which is controlled by the well width and the step width, is investigated in detail. Without an external electric field, the spin splitting is induced by an in terface related Rashba term due to the built-in structure inversion asymmetry. Applying the external electric field to the step QW, the Rashba effect can be enhanced or weakened, depending on the well structure as well as the direction and the magnitude of the electric field. The spin splitting is mainly controlled by the interface related Rashba term under a negative and a stronger positive electric field, and the contribution of the electric field related Rashba term dominates in a small range of a weaker positive electric field.A method to determine the interface parameter is proposed.The results show that the step QWs might be used as spin switches.

Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field

The polarization of vertical-cavity surface-emitting laser (VCSEL) can be controlled by electro-optic birefringence. We calculated the birefringence resulted from external electric field which was imposed on the top DBR of VCSEL by assuming that the two polarization modes were in the same place of the gain spectra in the absence of electric field beginning. By modifying SFM, the affection of the electric field strength on the polarization switching currents between the two polarization modes had been shown.

Transport properties through quantum dot in a vertical electric field

The transport properties through a quantum dot are calculated using the recursion method. The results show that the electric fields can move the conductive peaks along the high- and low-energies. The electric field changes the intensity of conductance slightly. Our theoretical results should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 Elsevier Science B.V. All rights reserved.

Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice

We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneling processes of electric field domains in doped weakly coupled GaAs/AlAs superlattices. Three regimes, i.e, stable field domains, current self-sustained oscillations and averaged field distribution are successively observed with increasing B. The mechanisms of switching-over among these regimes are due to B-induced modification of the dependence of the effective electron drift velocity on electric field. The simulated calculation gives a good agreement with the observed experimental results. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Experimental study of Electro-elasto-capillarity:Electric field driven unwrapping of water drop with elastic film

<正>Elasto-capillarity has drawn much of scientists' attention in the past several years.By inducing electric field into the droplet,the encapsulation and release procedure can be realized and we call it electro-elasto-capillarity(EEC).EEC offers a novel method for micro-scale actuation and self-assemble of moveable devices.It also provides a good candidate for the drug delivery at micro- or nanoscale.

Evolution of spiral wave and pattern formation in a vortical polarized electric field

In this paper, the evolution of the pattern transition induced by the vortical electric field (VEF) is investigated. Firstly, a scheme is suggested to generate the VEF by changing the spatial magnetic field. Secondly, the VEF is imposed on the whole medium, and the evolutions of the spiral wave and the spatiotemporal chaos are investigated by using the numerical simulation. The result confirms that the drift and the breakup of the spiral wave and the new net-like pattern are observed when different polarized fields are imposed on the whole medium respectively. Finally, the pattern transition induced by the polarized field is discussed theoretically.

Investigation on internal electric field distribution of organic light-emitting diodes (OLEDs) with Eu2O3 buffer layer

We have found that organic light-emitting diode (OLED) performance was highly improved by using europium oxide (Eu2O3) as a buffer layer on indium tin oxide (ITO) in OLEDs based on tris-(8-hydroxyquinoline) aluminium (Alq(3)), which showed low turn-on voltage, high luminance, and high electroluminescent (EL) efficiency. The thickness of Eu2O3 generally was 0.5-1.5 nm. We investigated the effects of Eu2O3 on internal electric field distributions in the device through the analysis of current-voltage characteristics, and found that the introduction of the buffer layer balanced the internal electric field distributions in hole transport layer (HTL) and electron transport layer (ETL), which should fully explain the role of the buffer layer in improving device performance. Our investigation demonstrates that the hole injection is Fowler-Nordheim (FN) tunnelling and the electron injection is Richardson-Schottky (RS) thermionic emission, which are very significant in understanding the operational mechanism and improving the performance, of OLEDs.

Electric-field-induced molecular alignment of side-chain liquid-crystalline polyacetylenes containing biphenyl mesogens

Electric-field-induced molecular alignments of side-chain liquid-crystalline polyacetylenes [-{HC=C[(CH2)(m)OCO-biph-OC7H15]}-, where biph is 4,4'-biphenylyl and m is 3 (PA3EO7) or 9 (PA9EO7)] were studied with X-ray diffraction and polarized optical microscopy. An orientation as high as 0.84 was obtained for PA9EO7. Furthermore, the molecular orientation of]PA9EO7 was achieved within a temperature range between the isotropic-to-smectic A transition temperature and 115 degreesC, and this suggested that the orientational packing was affected by the thermal fluctuation of the isotropic liquid and the mobility of the mesogenic moieties. The maximum achievable orientation for PA9EO7 was much greater than that for PA3EO7. This was the first time that the electric-field-induced molecular orientation of a side-chain liquid-crystalline polymer with a stiff backbone was studied.

Conformational and orientational analyses of 2,2 '-bithiophene under interaction of external electric field constructed by point charges

The fully relaxed single-bond torsional potentials and orientation-related rotational potentials of 2,2'-bithiophene (BT) under the interaction of an external electric field (EF) constructed by point charges have been evaluated with semi-empirical AMI and PM3 calculations. The torsional potentials are sensitive to both EF strength and direction. While the EF is parallel to the molecular long axis, the torsional barrier around C-x-C-x' bond obviously rises with increasing the EF strength, whereas the relative energies of syn and anti minima show a slight change. The interaction between the EF and the induced dipole moment has been proposed to elucidate this observation. On the other hand, the relative energy difference between the syn and anti minima shows an obvious change, while the EF is perpendicular to the molecular long axis. This feature has been ascribed to the interaction between the EF and the permanent dipole moment of BT. Furthermore, conformational and orientational analyses in two dimensions have been carried out by changing the torsional and rotational angles in the different EF. The conformation and orientation of a gas-phase BT in the EF are governed by both the above factors.

Study on single crystals of butyl branched polyethylene in the presence of electric field

Single crystal of butyl branched polyethylene with various molecular weight formed from the melt in the presence of electric field was studied. It was found that electric field influenced morphology and structure of the butyl branched polyethylene single crystals formed. The lateral habits of the single crystals were circular shape, which was different from truncated lozenge or lenticular shape single crystals formed from the melt in the absence of electric field. The stems in the single crystals formed in the presence Of electric field were perpendicular to the basal plane of the single crystals, which was different from chain tilting in single crystals formed from the melt in the absence of electric field. The electron diffraction patterns showed that the structure of the circular single crystals was a quasi-hexagonal with looser chain packing. This looser chain packing was favorable to thickening growth of single crystals through chain sliding diffusion. The thickness of the single crystals was much larger and depended on molecular weight. It indicated that the single crystal in the presence of electric field should be an extended chain type Single crystal.

Conformational analysis of 2,2 '-bithiophene under interaction of external electric field defined by point charges

Conformational analysis of 2,2'-bithiophene (BT) under the influence of an electric field (EF) constructed by point charges has been performed by using semi-empirical Austin Model 1 (AM1) and Parametric model number 3 (PM3) calculations. When the EF perpendicular to the molecular conjugation chain is applied, both AM1 and PM3 calculations show an energy increase of the anti-conformation. AM1 predicts that the global minimum shifts to syn-conformation when the EF strength is larger than a critical value. and PM predicts that the local minimum in anti-conformation vanishes. This kind of EF effect has been ascribed to the EF and dipole moment interaction.