Dynamics of strangeness production in heavy-ion collisions near threshold energies

Within the framework of the improved isospin-dependent quantum molecular dynamics (ImIQMD) model, the dynamics of strangeness (K-0,K-+, Lambda, and Sigma(-,0,+)) production in heavy-ion collisions near threshold energies is investigated systematically, with the strange particles considered to be produced mainly by inelastic collisions of baryon-baryon and pion-baryon. Collisions in the region of suprasaturation densities of the dense baryonic matter formed in heavy-ion collisions dominate the yields of strangeness production. Total multiplicities as functions of incident energies and collision centralities are calculated with the Skyrme parameter SLy6. The excitation function of strangeness production is analyzed and also compared with the KaoS data for K+ production in the reactions C-12 + C-12 and Au-197 + Au-197.

Dynamics of pion production in heavy-ion collisions around 1A GeV energies

Within the framework of the improved isospin-dependent quantum molecular dynamics model, the dynamics of pion emission in heavy-ion collisions in the region of 1A GeV energies as a probe of nuclear symmetry energy at suprasaturation densities is investigated systematically. The total pion multiplicities and the pi(-)/pi(+) yields are calculated for selected Skyrme parameters SkP, SLy6, Ska, and SIII and also for the cases of different stiffness of symmetry energy with the parameter SLy6. The influence of Coulomb potential, symmetry energy, and in-medium pion potential on the pion production is investigated and compared to each other by analyzing the distributions of transverse momentum and longitudinal rapidity and also the excitation functions of the total pion and the pi(-)/pi(+) ratio. The directed flow, elliptic flow, and polar-angle distributions are calculated for the cases of different collision centralities and also the various stiffnesses of the symmetry energies. A comparison of the calculations with the available experimental data is performed.

PROBING THE SYMMETRY ENERGY AT SUPRA-SATURATION DENSITIES FROM PION EMISSION IN HEAVY-ION COLLISIONS

Within the framework of the improved isospin dependent quantum molecular dynamics (ImIQMD) model, the emission of pion in heavy-ion collisions in the region 1 A GeV as a probe of nuclear symmetry energy at supra-saturation densities is investigated systematically, in which the pion is considered to be mainly produced by the decay of resonances Delta(1232) and N*(1440). The pi(-)/pi(+) yields are calculated for selected Skyrme parameters SkP, SLy6, Ska and SIII, and also for the cases of different stiffness of symmetry energy with the parameter SLy6. Preliminary results compared with the measured data by the FOPI collaboration favor a hard symmetry energy of the potential term proportional to (rho/rho(0))(gamma s) with gamma(s) = 2.

Nonadiabatic photodissociation dynamics

The photodissociation dynamics of the triatomic (or pseudo-triatomic) system in the nonadiabatic multiple electronic states is investigated by employing a time-dependent quantum wavepacket method, while the time propagation of the wave packet is carried out using the split-operator scheme. As a numerical example, the photodissociation dynamics of CH,l in three electronic states (1)Q(1)(A'), (1)Q(1)(A"), and (3)Q(0+) is studied and CH3I is treated as a pseudotriatomic model. The absorption spectra and product vibrational state distributions are calculated and compared with previous theoretical work. (C) 2004 Wiley Periodicals, Inc.

Continuous configuration time-dependent self-consistent field method for polyatomic quantum dynamical problems

A new continuous configuration time-dependent self-consistent field method has been developed to study polyatomic dynamical problems by using the discrete variable representation for the reaction system, and applied to a reaction system coupled to a bath. The method is very efficient because the equations involved are as simple as those in the traditional single configuration approach, and can account for the correlations between the reaction system and bath modes rather well. (C) American Institute of Physics.

Spin-dependent transport and spin polarization in coupled quantum wells

We theoretically investigate the electron transport and spin polarization of two coupled quantum wells with Dresselhaus spin-orbit interaction. In analogy with the optical dual-channel directional coupler, the resonant tunneling effect is treated by the coupled-mode equations. We demonstrate that spin-up and -down electrons can be completely separated from each other for the system with an appropriate system geometry and a controllable barrier. Our result provides a new approach to construct spin-switching devices without containing any magnetic materials or applying a magnetic field. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2981204]

Temperature-dependent transport and spin accumulation in a quantum wire with Rashba spin-orbit interaction

We study the theory of temperature-dependent electron transport, spin polarization, and spin accumulation in a Rashba spin-orbit interaction (RSOI) quantum wire connected nonadiabatically to two normal conductor electrode leads. The influence of both the wire-lead connection and the RSOI on the electron transport is treated analytically by means of a scattering matrix technique and by using an effective free-electron approximation. Through analytical analysis and numerical examples, we demonstrate a simple way to design a sensitive spin-transfer switch that operates without applying any external magnetic fields or attaching ferromagnetic contacts. We also demonstrate that the antisymmetry of the spin accumulation can be destroyed slightly by the coupling between the leads and the wire. Moreover, temperature can weaken the polarization and smear out the oscillations in the spin accumulation.

Spin-dependent current noises in transport through coupled quantum dots

Current fluctuations can provide additional insight into quantum transport in mesoscopic systems. The present work is carried out for the fluctuation properties of transport through a pair of coupled quantum dots which are connected with ferromagnetic electrodes. Based on an efficient particle-number-resolved master equation approach, we are concerned with not only fluctuations of the total charge and spin currents, but also of each individual spin-dependent component. As a result of competition among the spin polarization, Coulomb interaction, and dot-dot tunnel coupling, rich behaviors are found for the self- and mutual-correlation functions of the spin-dependent currents.

Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well

Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.

Spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor quantum dots

We theoretically investigate the spin-dependent transport through Cd1-xMnxTe diluted magnetic semiconductor (DMS) quantum dots (QD's) under the influence of both the external electric field and magnetic field using the recursion method. Our results show that (1) it can get a 100% polarized electric current by using suitable structure parameters; (2) for a fixed Cd1-xMnxTe DMS QD, the wider the system is, the more quickly the transmission coefficient increases; (3) for a fixed system length, the transmission peaks of the spin-up electrons move to lower Fermi energy with increasing Cd1-xMnxTe DMS QD radius, while the transmission of the spin-down electrons is almost unchanged; (4) the spin-polarized effect is slightly increased for larger magnetic fields; (5) the external static electric field moves the transmission peaks to higher or lower Fermi energy depending on the direction of the applied field; and (6) the spin-polarized effect decreases as the band offset increases. Our calculated results may be useful for the application of Cd1-xMnxTe DMS QD's to the spin-dependent microelectronic and optoelectronic devices.

Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)

InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

The effects of growth temperature on the bimodal size distribution of InAs quantum dots on vicinal GaAs(100) substrates grown by metal organic chemical vapor deposition are studied. An abnormal trend of the bimodal size evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then exhibits a sudden decrease at 535 degrees C. The trend is explained by taking into account the presence of multiatomic steps on the substrates. Photoluminescence (PL) studies show that quantum dots on vicinal substrates have a narrower PL linewidth, a longer emission wavelength, and a larger PL intensity than those of the dots with exact substrates. (c) 2006 American Institute of Physics.

Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

Angular dependent characteristics of a 1.3-mu m GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect

Characteristics of a 1.3-mum GaInNAs RCE PD with respect to the incident light angle were analyzed both in theoretical simulation and experiments. The results show the influence can be neglected when the light incidence angle is less than 3degrees. This is a requirement for the PD to be applied in WDM networks. (C) 2002 Wiley Periodicals, Inc.

The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells

(1 1 (2) over bar 0) GaN/InGaN multiple quantum wells (MQWs) were grown on (1 (2) over bar 0 2) sapphire by metal-organic vapor phase epitaxy. The excitation-intensity-dependent photoluminescence (PL) spectrum of these samples was measured, and no peak shift was observed. This phenomenon was attributed to the absence of piezoelectric field (PEF) along the growth orientation of the (1 1 (2) over bar 0) face MQWs. Our experimental results showed that PEF was the main reason causing peak blueshift in excitation-intensity-dependent PL spectrum of (0 0 0 1) InGaN/GaN NIQWs. It was expected that fabricating (1 1 (2) over bar 0) face nitride device should be a method to avoid PEF and get low-threshold, high-quantum-efficiency and stable-emission-wavelength light-emission devices. (C) 2002 Elsevier Science B.V. All rights reserved.