WG-like modes selectivity in a square cavity with posts

We investigate the characteristics of Whispering-Gallery(WG)-like modes in a square cavity with posts by employing the two-dimentional (2D) finite-difference time-domain (FDTD) technique combined with the effective index method. The results indicate that the posts can result in mode selection in the WG-like modes. The WG-like modes with odd mode numbers are not much sensitive to the sizes of the posts. However, the quality factor (i.e. Q-factor) of the WG-like modes with even mode numbers decreases sharply with the increasing size of the posts. The decreasing Q-factor is attributed to mode leakage and scattering loss due to the presence of the post. The mode selection increases with the mode spacing of square cavity twice in an optimized strucure.

A 16-term error model based on linear equations of voltage and current variables

Formulation of a 16-term error model, based on the four-port ABCD-matrix and voltage and current variables, is outlined. Matrices A, B, C, and D are each 2 x 2 submatrices of the complete 4 x 4 error matrix. The corresponding equations are linear in terms of the error parameters, which simplifies the calibration process. The parallelism with the network analyzer calibration procedures and the requirement of five two-port calibration measurements are stressed. Principles for robust choice of equations are presented. While the formulation is suitable for any network analyzer measurement, it is expected to be a useful alternative for the nonlinear y-parameter approach used in intrinsic semiconductor electrical and noise parameter measurements and parasitics' deembedding.

Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double-hetero-epitaxial silicon on insulator (SOI) structure Si/gamma-Al2O3/Si. Firstly, single crystalline gamma-Al2O3(100) insulator films were grown epitaxially on Si(100) using the sources of TMA (Al(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. Afterwards, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a chemical vapor deposition method similar to the silicon on sapphire epitaxial growth. The Si/gamma-Al2O3/Si SOL materials are characterized in detail by reflect high-energy electron diffraction, X-ray diffraction and Auger energy spectrum (AES) techniques. The insulator layer of gamma-Al2O3 has an excellent dielectric property. The leakage current is less than 1 x 10(-10) A/cm(2) when the electric field is below 1.3 MV/ cm. The Si film grown on gamma-Al2O3/Si epi-substrates was single crystalline. Meanwhile, the AES depth profile of the SOL structure shows that the composition of gamma-Al2O3 film is uniform, and the carbon contamination is not observed. Additionally, the gamma-Al2O3/Si epi-substrates are suitable candidates as a platform for a variety of active layers such as GaN, SiC and GeSi. It shows a bright future for microelectronic and optical electronics applications. (C) 2002 Elsevier Science B.V. All rights reserved.

Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells

Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation

A novel idea of InAlAs native oxide utilized to replace the p-n-p-n thyristor blocking layer and improve the high-temperature performance of buried heterostructure InGaAsP-InP laser is first proposed and demonstrated. A characteristic temperature (T-0) of 50 K is achieved from an InA1As native oxide buried heterostructure (NOBH) InGaAsP-InP multiquantum-well laser with 1.5-mu m-wide diode leakage passage path. The threshold current and slope efficiency of NOBH laser changes from 5.6 mA, 0.23 mW/mA to 28 mA, 0.11 mW/mA with the operating temperature changing from 20 degrees C to 100 degrees C. It is comparable to conventional p-n reverse biased junction BH laser with minimized diode leakage current, and is much better than the buried ridge strip with proton implanted laterally confinement laser.

Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic temperature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)01352-7].

Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X

The effects of plasma induced damage in different conditions of ICP and PECVD processes on LEDs were presented. For ICP mesa etch, in an effort to confirm the effects of dry etch damage on the optical properties of p-type GaN, a photoluminescence (PL) measurement was investigated with different rf chuck power. It was founded the PL intensity of the peak decreased with increasing DC bias and the intensity of sample etched at a higher DC bias of -400V is less by two orders of magnitude than that of the as-grown sample. Meanwhile, In the IN curve for the etched samples with different DC biases, the reverse leakage current of higher DC bias sample was obviously degraded than the lower one. In addition, plasma induced damage was also inevitable during the deposition of etch masks and surface passivation films by PECVD. The PL intensity of samples deposited with different powers sharply decreased when the power was excessive. The PL spectra of samples deposited under the fixed condition with the different processing time were measured, indicating the intensity of sample deposited with a lower power did not obviously vary after a long time deposition. A two-layer film was made in order to improve the compactness of sparse dielectric film deposited with a lower power.

Fabrication of improved FD SOIMOSFETs for suppressing edge effect

FD SOI MOSFETs with MESA and Irradiated FD SOI MOSFETs with LOCOS isolation usually show the edge effect, that is, the leakage current called hump is generated in the subthreshold region. According to different reasons for generating the edge effect, rounded corner process and BTS structure are applied to improve device performance. The results indicate that the above two methods are effective to reduce the edge effect and qualified devices are fabricated successfully.

A direct-conversion mixer with DC-offset cancellation for IEEE 802.11a WLAN receiver

A DC-offset cancellation scheme in the 5GHz direct-conversion receiver compliant with IEEE 802.11a wireless LAN standard is described in this paper. It uses the analog feedback loop to eliminate the DC-offset at the output of the double-balanced mixer. The mixer has a simulation voltage conversion gain of IMB at 5.2GHz, noise figure of 9.67dB, IIP3 of 7.6dBm. The solution provides 39.1dB reduction according to the leakage value at LO and mixer load resistors, the additional noise figure added to mixer is less than 0.9dB, the added power dissipation is 0.1mW and was fabricated in 60GHz 0.35 mu m SiGe BiCMOS technology.

Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers

Ionizing radiation response of partially-depleted MOS transistors fabricated in the, fluorinated SIMOX wafers has been investigated. The experimental data show that the, radiation-induced threshold voltage shift of PMOSFETs and NMOSFETs, as well as the radiation-induced increase of off-state leakage current of NMOSFETs can be restrained by implanting fluorine ions into the buried oxide of SIMOX wafers.

Methane hydrate growth velocity in seepage system of Qiongdongnan Basin, South China Sea

The occurrences of diapirs, gas-filled zones and gas plumes in seawater in Qiongdongnan Basin of South China Sea indicate that there may exist seepage system gas-hydrate reservoirs. Assuming there has a methane venting zone of 1500 m in diameter, and the methane flux is 1000 kmol/a, and the temperature of methane hydrate-bearing sediments ranges from 3 degrees C to 20 degrees C, then according to the hydrate film growth theory, by numerical simulation, this paper computes the temperatures and velocities in 0 mbsf, 100 mbsf, 200 mbsf, 425 mbsf over discrete length, and gives the change charts. The results show that the cementation velocity in sediments matrix of methane hydrate is about 0.2 nm/s, and the seepage system will evolve into diffusion system over probably 35000 years. Meanwhile, the methane hydrate growth velocity in leakage system is 20 similar to 40 times faster than in diffusion system.

Temperature-stimulated abnormal annealing of neutron-induced damage in high-resistivity silicon detectors

Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.