Synthesis, structural characterization and electrical property of new oxide ion conductors: La3MMo2O12 (M = In, Ga and Al)

New series of oxides, La3MMo2O12 (M = In, Ga and Al), have been prepared by the solid-state reaction. The composition and elemental distribution were analyzed by the energy-dispersive X-ray (EDX) analysis. As determined by the X-ray diffraction (XRD), these compounds have similar crystal structures that can be indexed on a monoclinic cell at room temperature. AC impedance spectra and the DC electrical conductivity measurements in various atmospheres indicate that they are oxide ion conductors with ionic conductivities between 10(-2) and 10(-3) S/cm at 800 degrees C. The conductivity decreases in the order of La3GaMo2O12 > La3AlMo2O12 > La3InMo2O12, implying that the effect of cell volume and polarization associated with In3+, Ga3+ and Al3+ play an important role in the anion transport of these materials. The reversible phase transition was observed in all these compounds as confirmed by the differential thermal analysis (DTA) and dilatometric measurements.

An one-pot epitaxial growth method to synthesize cactus-like ZnO

In this work, we have developed a one-pot, morphology controlled epitaxial growth method to synthesize novel cactus-like ZnO in solution. Utilizing zinc acetate and hexamethylenetetramine as the precursors, ZnO nanorods synthesized in the first step remained in the solution, without any separation, served directly as the matrix for the epitaxial growth in the second step. Control experiments revealed that a proper mass of precursors added in the second step was crucial to form cactus-like ZnO. The as-synthesized ZnO was single crystalline and possessed three photoluminescence emissions centered at 390, 425 and 490 run. Finally, a possible mechanism for the epitaxial growth ZnO was proposed and discussed.

Solution-phase synthesis of Au@ZnO core-shell composites

A novel solution-phase method for the preparation of Au@ZnO core-shell composites was described. With this method, the composites were grown without heating that is usually needed in other solution methods. Atomic force microscopy (AFM) results show that the diameter of Au@ZnO core-shell composites is about 10.5 nm. X-ray photoelectron spectroscopy (XPS) was applied to characterize Au@ZnO core-shell composites. The optical properties of Au@ZnO core-shell composites, including UV-vis absorption and photo luminescence (PL), were observed at room temperature.

Multi-color long-lasting phosphorescence in Mn2+-doped ZnO-B2O3-SiO2 glass-ceramics

Multi-color LLP phenomenon was observed in Mn2+-doped ZnO-B2O3-SiO2 glassceramics after the irradiation of a UV lamp at room temperature. Transparent ZnO-B2O3-SiO2 glass emitted reddish LLP while opaque glass-ceramics prepared by the glass sample after heat treatment emitted yellowish or greenish LLP. The change of the phosphorescence is due to the alteration of co-ordination state of Mn2+. The phosphorescence of the samples was seen in the dark with naked eyes even 12 h after the irradiation with a UV lamp (lambda(max) = 254 nm) for 30 min. Based on the approximative t(-1) decay law of the phosphorescence, we suggest that the LLP is attributed to the thermally assisted electron-hole recombination.

蓝紫色ZnO-Al_2O_3-SiO_2长余辉陶瓷

通过高温固相法首次合成并报道了兰紫色ZnO Al2O3 SiO2长余辉陶瓷,系统地研究了其发光和缺陷性质。在强度0.6mW·cm-2,主峰254nm的UVP紫外灯下激发15min,然后关闭激发源,样品发射兰紫色长余辉。撤去激发源以后5s,余辉初始强度为230mcd·m-2,色坐标为(0.1292,0.0984)。暗视场中,8h以后余辉仍然肉眼可辨。样品的紫外可见发射和不同时间的余辉发射光谱显示:荧光发射位于390nm,来源于基质的自致发光;而余辉有两个发射峰,主峰位于390nm,肩峰位于520nm。这表明样品中存在两种余辉发射中心。由余辉衰减曲线可以看出,这两种余辉发光都由一个快过程和一个慢过程组成。其中,慢过程决定了材料的长余辉时间。从时间依赖的余辉强度倒数曲线可以看出,余辉强度与时间成反比,这表明余辉发光的机理为电子空穴复合过程。热释光谱显示:样品分别在92和250℃附近出现两个宽的热释峰,说明材料中至少存在两种具有不同陷阱深度的电子或空穴缺陷中心。

量子尺寸ZnO的溶胶法制备及光学性质研究现状

量子尺寸氧化锌是重要的氧化物半导体材料之一 ,文中简单介绍了它的溶胶法制备及粒子生长和聚集过程 ,着重阐述了其光学性质研究现状和光致发光机理 ,并展望了未来的发展方向。

Long lasting phosphorescence, thermoluminescence and electron spin resonance property of Mn2+ activated ZnO-Al2O3SiO2 ceramic

The long lasting phosphorescence (LLP) phenomenon in Mn2+-doped ceramic based on ZnO-Al2O3-SiO2 (ZASM) is observed. After irradiation by a UVP standard mercury lamp peaking at 254 nm with a power of 0.6 mW/cm(2) for 15 min, the ceramic sample emits a bright green light peaking at 519 nm, which can be seen in the dark even 15 h after the removal of UVP standard mercury lamp by the naked eyes whose limit of light perception is 0.32 mcd/m(2). The initial afterglow intensity reaches about 1900 mcd/m(2), and the color coordinate (X, Y) is (0.2280, 0.5767) at about 10 s after stopping irradiation. The thermoluminescence (TL) spectra show that there are at least three kinds of trap centers with different trap levels while electron spin resonance (ESR) spectra indicate that there are electron- and hole-trapping centers induced after irradiation by a UVP standard mercury lamp. Based on these measurements, the LLP is considered to be due to the recombination of electrons and holes at trapping centers with different levels, which are firstly thermally released back to Mn2+ and then give rise to the bright green LLP at room temperature.

Synthesis and characterization of a novel hybrid single crystal [Ga-3(PO4)(3)F-2]H3O center dot (H3NCH2CH2)(2)NH2

A novel three-dimensional fluorinated gallium phosphate has been hydrothermally,synthesized by using diethylenetriamine as an organic structure-directing agent. X-ray single crystal structure analysis indicates this compound crystallizes in the orthorhombic space group P-bca, a = 1. 605 6 (7) nm, b = 1.011 4 (4) nm, c=1. 854 6(5) nm, V=3. 011 6(19) nm(3), Z=4. The three-dimensional framework based on linkage of corner-sharing polyhedron PO4, GaO4F and GaO4F2 delimit ten-ring channels along b axis in which the triply protonated amines are located serving as charge compensating guests and supporters.

熔盐电解制备Ga-Nd合金的研究

Ga-Nd合金对磁性材料及半导体材料的研制是非常有用的。本文详细地研究了采用低熔点的镓作为阴极,从KCl-NdCl_3熔盐中电解制备廉价Ga-Nd合金的工艺条件。 本研究采用KCl-NdCl_3熔盐体系进行电解。KCl为分析纯。NdCl_3由Nd_2O_3(>99.99％)加过量NH_4Cl混合后,在大瓷蒸发皿中于350℃进行搅拌反应,直至产物完全溶于水。用滴定法确定原料中NdCl_3的含量。以金属镓作阴极(纯度为99.99wt％),阴

氯化物熔盐中Nd~(3+)在液体Ga电极上还原的电化学行为

本文利用循环V-A法(CV)研究了Nd~(3+)在液体Ga电极上还原的电化学反应动力学。结果表明,Nd~(3+)在Ga电极上的还原是分步进行的。第一步在较高的电位扫描速度下为扩散控制的可逆电荷传递反应,即Nd~(3+)+e?Nd~(2+);在电位扫描速度较低时,随后的化学反应为第一步反应的控制步骤,即Nd~(3+)+e?快Nd~(2+)+mCl→慢NdCl_m~(2-m)。第二步为不可逆的电荷传递反应,即沉积的金属Nd与Ga合金化,Nd~(2+)+2e→Nd(Ga)。估算了该反应的标准反应速度常数为7.0×10~(-3)cm/s。

具有不完全微分的Fuzzy-GA PID控制器及其在智能仿生人工腿中的应用

以模糊推理和遗传算法为基础，提出了一种新的具有不完全微分的最优PID控制器的设计方法，该控制器由离线和在线两部分组成，在离线部分，以系统响应的超调量、上升时间以及调整时间为性能指标，利用遗传算法搜索出一组最优的PID参数Kp^*、Ti^*和Td^*，作为在线部分调整的初始值，在在线部分，一个专用的PID参数优化程序以离线部分获得Kp^*、Ti^*和Td^*为基础，根据系统当前的误差e和误差变化率e^.，通过一个模糊推理系统在线调整系统瞬态响应的PID参数，以确保系统的响应具有最优的动态和稳态性能．该控制器已被用来控制由作者设计的智能仿生人工腿中的执行电机．计算机仿真结果表明，该控制器具有良好的控制性能和鲁棒性能。

资源受限单机动态调度的并行GA算法研究

研究资源受限系统动态调度问题,针对时序约束问题提出一种并行遗传算法(PGA)。给出满足排序优先次序约束的一种基因编码方法;采用不破坏优先级可行性的交叉操作,并予以证明;建立一种并行处理机制,使搜索避免出现局优现象。在技术允许情况下,单机动态调度引入抢占式加工方式,会一定程度上提高系统的性能。通过仿真试验验证,并行GA算法可兼顾优化效果和计算效率,解决单机动态调度问题。