Photoluminescence of doped ZnS nanoparticles under hydrostatic pressure

The pressure dependence of the photoluminescence from ZnS : Mn2+, ZnS : Cu2+, and ZnS : Eu2+ nanoparticles were investigated under hydrostatic pressure up to 6 GPa at room temperature. Both the orange emission from the T-4(1) - (6)A(1) transition of Mn2+ ions and the blue emission from the DA pair transition in the ZnS host were observed in the Mn-doped samples. The measured pressure coefficients are -34.3(8) meV/GPa for the Mn-related emission and -3(3) meV/GPa for the DA band, respectively. The emission corresponding to the 4f(6)5d(1) - 4f(7) transition of Eu2+ ions and the emission related to the transition from the conduction band of ZnS to the t(2) level of Cu2+ ions were observed in the Eu- and Cu-doped samples, respectively. The pressure coefficient of the Eu-related emission was found to be 24.1(5) meV/GPa, while that of the Cu-related emission is 63.2(9) meV/GPa. The size dependence of the pressure coefficients for the Mn-related emission was also investigated. The Mn emission shifts to lower energies with increasing pressure and the shift rate (the absolute value of the pressure coefficient) is larger in the ZnS : Mn2+ nanoparticles than in bulk. Moreover, the absolute pressure coefficient increases with the decrease of the particle size. The pressure coefficients calculated based on the crystal field theory are in agreement with the experimental results. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition

Two Mg-doped GaN films with different doping concentrations were grown by a metalorganic chemical vapor deposition technique. Photoluminescence (PL) experiments were carried out to investigate the optical properties of these films. For highly Mg-doped GaN, the PL spectra at 10 K are composed of a blue luminescence (BL) band at 2.857 eV and two excitonic luminescence lines at 3.342 eV and 3.282 eV, in addition to a L2 phonon replica at 3.212 eV. The intensity of the L1 line decreases monotonously with an increase,in temperature. However, the intensity of the L2 line first slowly increases at first, and then decreases quickly with an increase in temperature. The two lines are attributed to bound excitonic emissions at extended defects. The BL band is most likely due to the transition from deep donor Mg-V-N complex to Mg shallow acceptor. From the temperature dependence of the luminescence peak intensity of the BL band, the activation energy of acceptor Mg was found to be 290 meV. (C) 2003 American Vacuum Society.

Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition

Investigations on photoluminescence properties of (11 (2) over bar0) GaN grown on (1 (1) over bar 02) Al2O3 substrate by metalorganic chemical-vapor deposition are reported. Several emission lines not reported before are observed at low temperature. The sharp peak at 3.359 eV is attributed to the exciton bound to the neutral acceptor. Another peak at 3.310 eV represents a free-to-bound, probably a free electron-to-acceptor, transition. The 3.241 and 3.170 eV lines are interpreted as phonon replica lines of the 3.310 eV line. The phonon energy is 70 meV, consistent with the energy of transverse optical E-1 phonon. The optical properties of the lines are analyzed. (C) 2003 American Institute of Physics.

Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice

We investigated properties of intraband absorption in In-x Ga1-xAs quantum dots (QDs) superlattice. Energy levels in conduction band in QDs were calculated for a cone-shaped quantum dot associated with coupling between QDs in the framework of the effective-mass envelope-function theory. Theoretical results demonstrated that energy levels in conduction band were greatly affected by the vertical coupling between quantum dots, which can be used to modify transition wavelength by adjusting the space layer thickness. Intraband transition is really sensitive to normal incidence and the absorption peak intensity is dependent on the polarization. A satisfying agreement is found between theoretical and experimental values. This result opens up prospects for the fabrication of QDs infrared detectors, which work at atmospheric windows.

Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate

We investigated the photoluminescence (PL) of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots (QDs) grown on (311)A GaAs substrate. The PL peak at 10 K shifts to lower energy by about 30 meV when the excitation power decreases by two orders of magnitude. It has a red-shift under pressure, that is the character of X-like transition. Moreover, its peak energy is smaller than the indirect gap of bulk Al0.5Ga0.5As and In0.55Al0.45As. We then attribute that peak to the type-II transition between electrons in X valley of Al0.5Ga0.5As and heavy holes in In0.55Al0.45As QDs. A new peak appears at the higher energy when temperature is increased above 70 K. It shifts to higher energy with increasing pressure, corresponding to the transition from conduction Gamma band to valence band in QDs. The measurements demonstrate that our In0.55Al0.45As/Al0.5Ga0.5As quantum dots are type-II QDs with X-like conduction-band minimum. To interpret the second X-related peak emerged under pressure, we discuss the X-valley split in QDs briefly. (C) 2000 American Institute of Physics. [S0003-6951(00)04622-2].

Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate

We have made a normal incidence high infrared absorption efficiency AlAs/Al0.55Ga0.45As multiple-quantum-well structure grown on (211) GaAs substrates by molecular beam epitaxy (MBE). A strong infrared absorption signal at 11.6 mu m due to the transition of the ground state to the first excited state, and a small signal at 6.8 mu m due to the transition from the ground state to continuum. were observed. A 45 degrees tilted incidence measurement was also performed on the same sample for the comparison with a normal incidence measurement. Both measurements provide important information about the quantum well absorption efficiency. Efficiencies which evaluate the absorption of electric components perpendicular and parallel to the well plane are eta(perpendicular to) = 25% and eta(parallel to) = 88%, respectively. The total efficiency is then deduced to be eta = 91%. It is apparent that the efficiency eta(parallel to) dominates the total quantum efficiency eta Because an electron in the (211) AlAs well has a small effective mass (m(zx)* or m(zy)*), the normal incidence absorption coefficient is expected to be higher:than that grown on (511) and (311) substrates. Thus, in the present study, we use the (211) substrate to fabricate QWIP. The experimental results indicate the potential of these novel structures for use as normal incidence infrared photodetectors.

Investigation of absorption of nanocrystalline silicon

Nanocrystalline silicon embedded SiO2 matrix is formed by annealing the SiO2 films fabricated by plasma enhanced chemical vapor deposition technique. In conjunction with the micro-Ramam spectra, the absorption spectra of the films have been investigated. The blue-shift of absorption edge with decreasing size of silicon crystallites is due to quantum confinement effect. It is found that nanocrystalline silicon is of an indirect band structure, and that the absorption presents an exponential dependance absorption coefficient on photon energy ii! the range of 2.0-3.0 eV, and a sub-band appears in the the range of 1.0-1.5 eV. We believe that the exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the Sub-band absorption is ascribed to transitions between the amorphous silicon states existing in the films.

Optical properties of nanocrystalline silicon embedded in SiO2

Nanocrystalline silicon embedded SiO2 matrix has been formed by annealing the a-SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption and photoluminescence spectra of, the films have been studied in conjunction with micro-Raman scattering spectra. It is found that absorption presents an exponential dependence of absorption coefficient to photon energy in the range of 1.5-3.0 eV, and a sub-band appears in the range of 1.0-1.5 eV. The exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between surfaces and/or defect states of the silicon nanocrystallites. The existence of Stokes shift between absorption and photoluminescence suggests that the phonon-assisted luminescence would he enhanced due to the quantum confinement effects.

Perpendicular-electric-field dependence of exciton binding energy studied by continuous-wave photoluminescence

The reduction of exciton binding energy induced by a perpendicular electric field in a stepped quantum well is studied. From continuous-wave photoluminescence spectra at 77 K we have observed an obvious blueshift of the exciton peak due to a spatially direct-to-indirect transition of excitons. A simple method is used to calculate the exciton binding energy while the inhomogeneous broadening is taken into account in a simple manner. The calculated result reproduces remarkably well the experimental observation.

DIRECT OBSERVATION FOR THE REDUCTION OF EXCITON BINDING-ENERGY INDUCED BY PERPENDICULAR ELECTRIC-FIELD

We experimentally study the effect of perpendicular electric field on the exciton binding energy using a specially designed step quantum well. From photoluminescence spectra at the temperature of 77 K, we have directly observed remarkable blueshift of the exciton peak due to the transition from spatially direct to spatially indirect excitons induced by electric field. (C) 1995 American Institute of Physics.

Comparison of aggregation behaviors between branched and linear block polyethers: MesoDyn simulation study

The comparison of aggregation behaviors between the branched block polyether T1107 (polyether A) and linear polyether (EO)(60)(PO)(40)(EO)(60) (polyether B) in aqueous solution are investigated by the MesoDyn simulation. Polyether A forms micelles at lower concentration and has a smaller aggregation number than B. Both the polyethers show the time-dependent micellar growth behaviors. The spherical micelles appear and then change to rod-like micelles with time evolution in the 10 vol% solution of polyether A. The micellar cluster appears and changes to pseudo-spherical micelles with time evolution in the 20 vol% solution of polyether A. However, the spherical micelles appear and change to micellar cluster with time evolution in the 20 vol% polyether B solution. The shear can induce the micellar transition of both block polyethers. When the shear rate is 1x10(5) s(-1), the shear can induce the sphere-to-rod transition of both polyethers at the concentration of 10 and 20 vol%. When the shear rate is lower than 1x10(5) s(-1), the huge micelles and micellar clusters can be formed in the 10 and 20 vol% polyether A systems under the shear, while the huge micelles are formed and then disaggregated with the time evolution in the 20 vol% polyether B system.

Atomic Structures and Radiative Properties of He-like Ions in Debye Plasmas

A detailed investigation of plasma screening effects on atomic structure and transition properties are presented for He-like ions embedded in dense plasma environment. Multi-configuration Dirac-Fock calculations were carried out for these ions by considering a Debye-Huckel potential. A large-scale relativistic configuration-interaction method is adopted to calculate transition energies and transition probabilities and to allow for a systematic improvement of the calculations. Comparison of the presently calculated results with others, when available, is made.

Calorimetric study and thermal analysis of crystalline nicotinic acid

As one primary component of Vitamin B-3, nicotinic acid [pyridine 3-carboxylic acid] was synthesized, and calorimetric study and thermal analysis for this compound were performed. The low-temperature heat capacity of nicotinic acid was measured with a precise automated adiabatic calorimeter over the temperature rang from 79 to 368 K. No thermal anomaly or phase transition was observed in this temperature range. A solid-to-solid transition at T-trs = 451.4 K, a solid-to-liquid transition at T-fus = 509.1 K and a thermal decomposition at T-d = 538.8 K were found through the DSC and TG-DTG techniques. The molar enthalpies of these transitions were determined to be Delta(trs)H(m =) 0.81 kJ mol(-1), Delta(fus)H(m) 27.57 kJ mol(-1) and Delta(d)H(m) = 62.38 kJ mol(-1), respectively, by the integrals of the peak areas of the DSC curves.

Sensitive, Label-Free Protein Assay Using 1-ethyl-3-methylimidazolium Tetrafluoroborate Supported Microchip Electrophoresis with Laser-Induced Fluorescence Detection

Based on the dimer-monomer equilibrium movement of the fluorescent dye Pyronin Y (PY), a rapid, simple, highly sensitive, label-free method for protein detection was developed by microchip electrophoresis with LIF detection. PY formed a nonfluorescent dimer induced by the premicellar aggregation of an anionic surfactant, SDS, however, the fluorescence intensity of the system increased dramatically when proteins such as BSA, bovine hemoglobin, cytochrome c, and trypsin were added to the solution due to the transition of dimer to fluorescent monomer. Furthermore, 1-ethyl-3-methylimidazolium tetrafluoroborate (EMImBF(4)) instead of PBS was applied as running buffers in microchip electrophoresis.

Ion-Responsive Behavior of Ionic-Liquid Surfactant Aggregates with Applications in Controlled Release and Emulsification

We propose a simple but efficient, rapid, and quantitative ion-responsive micelle system based on counter-anion exchange of a surfactant with an imidazolium unit. The ion-exchange reaction results in the amphiphilic-to-hydrophobic transition of the imidazolium salt, leading to the destruction of the micelles, which has been successfully applied to control led release and emulsification.