OBSERVATION OF EU2+ AND TB4+ IN SRMG4-EU8+, TB8+

Europium(II) and terbium(LV) drive boon observed in SrMgF4: Eu3+, Tb5+ phosphors which are synthesized in Ar stream. The valence state of europium is influenced by terbium. It is notable that the intensities of electron paramagnetic resonance (EPR) peaks corresponding to Eu2+ are increased when Tb3+ ion is incorporated in SrMgF4:Eu3+ phosphors, while X-ray photoelectron spectra of Tb-8d5/2 in SrMgF4:Eu3+,Tb3+ shows an additional peak at high energy to that of Tb-3d5/2 in SrMgF4: Tb3+, which is due to Tb4+. These phenomena can be explained by an electron transfer mechanism.

COMPARATIVE-STUDIES ON PERIODATOCUPRATE(II, III) AND TELLURATOCUPRATE(II, III)

The crystal structures, electronic spectra, and Cu2p XPS of Cu(III) complexes Na4H[Cu(H2TeO6)(2)]. 17H(2)O and Na4K[Cu(HlO(6))(2)]. 12H(2)O have been described. The characterizations of a Cu(III) atom in a complex are as follows: (i) In a square-planar coordination, the average bond length of Cu-O is 0.183 nm, shorter than the 0.190-0.200 nm found for a Cu(II) complex. (2) The ''blue shift'' occurs for d-d transitions in the electronic spectrum of the Cu(III) complex compared to those of its related Cu(II) complex, resulting from the higher valence state. (3) Cu(III) compounds with CuO4 square-planar coordination are expected to be diamagnetic whereas Cu(II) compounds to be paramagnetic. (4) Comprehensive investigations on Cu2p XPS show that the binding energy of Cu2p(3/2) of a pure Cu(III) compound is about 2.0 eV higher than that of its corresponding Cu(II) compound: the shake-up satellites do not appear in the Cu2p XPS for a pure diamagnetic Cu(III) compound, the same as found for a diamagnetic Ni(II) compound: the FWHM of the signal of Cu2p XPS may become broader for Cu(III) compound because its core hole's lifetime shortens due to the higher valence state of copper. (C) 1995 Academic Press, Inc.

Electron Transfer and its Equilibrium between Eu and Tb in SrMgF4 System

Emission of europium(II) and europium(III) have been observed in SrMgF4 xEu, yTb phosphors winch are synthesized in Ar flow. The valence state of En is influenced by terbium, It is noted that the intensities of the ESR peaks corresponding to Eu2+ are increased when terbium ion is codopech this can be explained by electron transfer mechanism which is Eu3++Tb3+-->Eu2++Tb4+. And its equilibrium constant is calculated.

INVESTIGATION OF THE ELECTRICAL AND MAGNETIC-PROPERTIES OF YSR2-XCAXV3O9-Y

All the members of the solid solution of YSr2-xCaxV3O9-y have the orthorhombic symmetry. Their electrical and magnetic properties have been studied. The magnetic susceptibility and electrical resistivity increase gradually with x. The system shows paramagnetic behavior both at 300 K and at 77 K. It is shown that a change of valence state of vanadium obviously affects the electrical and magnetic properties of the solid solution.

STUDY ON BONDING AND 4F ORBITAL EFFECT OF LANTHANIDE COMPOUNDS

The bonding and the 4f orbital effect of lanthanide elements at different valence state in their compounds have been studied by INDO method in this paper. The results obtained show that the bonding of lanthanide compounds is affected by many factors, such as valence state, ionic radius, ligand, coordinate number, space configuration etc. The strength of bonds composed of different ligands with lanthanide is distinctly different. The covalence of Ln-L bonds of lanthanide ions at high valence state in their compounds is larger than that at low valence state, The covalency at low coordinate number is larger than that at high coordinate number. Some lanthanide compounds with special configuration, besides sigma-bond, can form p(pi)-d(pi) dative bond with much overlap, which makes the Ln-L bond increase markedly. The effect of 4f orbitals on bonding is far less than that of 5d orbitals. The Ln 4f orbitals at 3 or 2 valence state may be considered to be essentially localized, while the contribution of 4f orbitals on bonding in 4 valent cerium compounds increases obviously, up to 1%.

XPS STUDY ON RARE-EARTH PHTHALOCYANINE COMPLEXES

The rare earth monophthalocyanine complexes, LnPcCl and LnPc(OAc)2 (Ln = Tb, Ho, Tm, Lu, Pc=Phthalocyanine, OAc = Acetate), were synthesized. The electronic structures of the complexes have been studied by means of XPS. The experimental results of binding energies for the complexes indicate that the bonds of the complexes have a certain covalent character depending on L-->Ln charge transfer. This L-->Ln charge transfer process of phythalocyanine complexes differs from that of crown ether complexes. Both coordination and substitution are included in the former case, but only coordination in the latter. Phthalocyanine ring is an electrophilic group and its electronegativity is large. So, the O1s binding energies of coordinating oxygen atoms of acetate in LnPc(OAc)2 are larger than those of Ln(OAc)3. The magnitude of valent charge delocalized from ligand onto metal atom is dependent on electronegativity, coordination number, valence state and so on. Because coordination number of Ln in LnPc(OAc)2 is larger than that in LnPcCl and electronegativity of Clin LnPcCl is larger than that of O in LnPc(OAc)2, the Ln4d5/2 binding energies of LnPc (OAc)2 are less than those of LnPcCl.

Methane aromatization in the absence of an added oxidant and the bench scale reaction test

A bench scale reaction test for methane aromatization in the absence of an added oxidant was performed and its reaction result evaluated based on the carbon balance of the system. The result was compared with those obtained from the micro-reaction test to ensure the accuracy of the internal standard analyzing method employed in this paper. The catalytic performances of modified Mo/HZSM-5 catalysts were examined. It was found that pre-treatment by steam on HZSM-5 weakened the serious deposition of coke, and pre-impregnation of n-ethyl silicate on HZSM-5 could improve the conversion of CH4, but had little effect on coke formation. A low temperature activation procedure including pre-reduction of the catalyst with methane prevents the zeolite lattice from being seriously destroyed by high valence state Mo species when the Mo loading is high. It was suggested that Mo2C species detected by XRD spectra was the active phase for CH4 aromatization.

Sideband manipulation of population inversion in a three-level Λ atomic system

Sideband manipulation of population inversion in a three-level A atomic configuration is investigated theoretically. Compared with the case of a nearly monochromatic field, a population inversion between an excited state and a ground state has been found in a wide sideband intensity range by increasing the difference in frequency between three components. Furthermore, the population inversion can be controlled by the sum of the relative phases of the sideband components of the trichromatic pump field with respective to the phase of the central component. Changing the sum phase from 0 to pi, the population inversion between the excited state and the ground state can increase within nearly half of the sideband intensity range. At the same time, the sideband intensity range that corresponds to the system exhibiting inversion rho(00) > rho 11 also becomes wider evidently.

Investigations on valence-change behaviors of europium ions in Eu-doped aluminate and silicate phosphors

Compounds of Sr3Al2O6: Eu, Sr4Al14O25: Eu, and BaZnSiO4: Eu were synthesized by high-temperature solid state reactions. The doping Eu3+ ions were partially reduced to Eu2+ in Sr4Al14O25: Eu and BaZnSiO4: Eu prepared in an oxidizing atmosphere, N-2 + O-2. However, such an abnormal reduction process could not be performed in Sr3Al2O6: Eu, which was also prepared in an atmosphere of N-2 + O-2. Moreover, even though Sr3Al2O6: Eu was synthesized in a reducing condition CO, only part of the Eu3+ ions was reduced to Eu2+. The existence of trivalent and divalent europium ions was confirmed by photoluminescent spectra. The different valence-change behaviors of europium ions in the hosts were attributed to the difference in host crystal structures. The higher the crystal structure stiffness, the easier the reduction process from Eu3+ to Eu2+.

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

The hole subband structures and effective masses of tensile strained Si/Si1-yGey quantum wells are calculated by using the 6x6 k.p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si0.55Ge0.45 quantum well grown on a relaxed Si0.5Ge0.5 (100) substrates shows a large absorption coefficient of 8400 cm(-1).

Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of MgO (111)/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 3.65 +/- 0.23 eV and the conduction band offset is deduced to be 0.92 +/- 0.23 eV, indicating that the heterojunction has a type- I band alignment. The accurate determination of the valence and conduction band offsets is important for the applications of MgO/SiC optoelectronic devices. (C) 2008 American Institute of Physics.

Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55 +/- 0.23 eV and the conduction band offset is deduced to be -2.01 +/- 0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.

Optical manipulation of single electron spin in doped and undoped quantum dots

The optical manipulation of electron spins is of great benefit to solid-state quantum information processing. In this letter, we provide a comparative study on the ultrafast optical manipulation of single electron spin in the doped and undoped quantum dots. The study indicates that the experimental breakthrough can be preliminarily made in the undoped quantum dots, because of the relatively less demand.

Theory of ultrafast optical manipulation of electron spins in quantum wells

Based on a multiparticle-state stimulated Raman adiabatic passage approach, a comprehensive theoretical study of the ultrafast optical manipulation of electron spins in quantum wells is presented. In addition to corroborating experimental findings [Gupta , Science 292, 2458 (2001)], we improve the expression for the optical-pulse-induced effective magnetic field, in comparison with the one obtained via the conventional single-particle ac Stark shift. Further study of the effect of hole-spin relaxation reveals that, while the coherent optical manipulation of electron spin in undoped quantum wells would deteriorate in the presence of relatively fast hole-spin relaxation, the coherent control in doped systems can be quite robust against decoherence. The implications of the present results on quantum dots will also be discussed. (c) 2005 American Institute of Physics.

Conditions for the local manipulation of all bipartite Gaussian states

We provide a general, necessary, and sufficient condition for the possibility of transforming a mixed bipartite Gaussian state with arbitrarily many modes to another one under arbitrary local Gaussian channels, which do not include classical communication. Moreover, by means of this condition we present a necessary criterion that can be used to check the possibility of a state transformation between two mixed Gaussian states. At the same time, we prove that our criterion can be reduced to the Eisert-Plenio criterion when the mode number is chosen as 1 per side.