93 resultados para physical reasoning
Resumo:
We present a modified method for detecting the concurrence in an arbitrary two-qubit quantum state rho(AB) with local operations and classical communication. In this method, it is not necessary for the two observers to prepare the quantum state rho(AB) by the structural physical approximation. Their main task is to measure four specific functions via two local quantum networks. With these functions they can determine the concurrence and then the entanglement of formation.
Resumo:
We investigate the chirality dependence of physical properties of nanotubes which are wrapped by the planar hexagonal lattice including graphite and boron nitride sheet, and reveal its symmetry origin. The observables under consideration are of scalar, vector, and tensor types. These exact chirality dependences obtained are useful to verify the experimental and numerical results and propose accurate empirical formulas. Some important features of physical quantities can also be extracted by considering the symmetry restrictions without complicated calculations.
Resumo:
MnSb/porous silicon hybrid structure was prepared by physical vapor deposition technique. The structure and surface morphology of the MnSb films were analyzed by X-ray diffraction and scanning electron microscope, respectively. The magnetic hysteresis loops were obtained by an alternative gradient magnetometer. Based on the measurements, only MnSb phase was found and the surface morphology was rough and island-like. MnSb thin films show ferromagnetism at room temperature. (C) 2003 Elsevier B.V. All rights reserved.
Resumo:
The need to make default assumptions is frequently encountered in reasoning about incompletely specified worlds. Inferences sanctioned by default are best viewed as beliefs which may well be modified or rejected by subsequent observations. It is this property which leads to the non-monotonicity of any logic of defaults. In this paper we propose a logic for default reasoning. We then specialize our treatment to a very large class of commonly occuring defaults. For this class we develop a complete proof theory and show how to interface it with a top down resolution theorem prover. Finally, we provide criteria under which the revision of derived beliefs must be effected.
Resumo:
Physical vapor transport studies of GeSe(x)Te1 - x (x = 0.1, 0.2, 0.3, and 0.4) solid solutions demonstrated, that individual, large single crystals of these materials can be grown in closed ampoules. A compositional analysis of the grown crystals revealed, that the mass transport (crystal growth) process under steady-state conditions is pseudo-congruent and controlled by diffusion processes in the source material. From these experiments, the degree of non-stoichiometry (Ge-vacancy concentrations) of GeSe(x)Te1 - x single crystals could be estimated. The effects of the cubic to rhombohedral phase transformation during cooling on the microstructure and morphology of the grown mixed crystals are observed. This work provides the basis for subsequent defect studies and electrical measurements on these crystals.
Resumo:
We report the physical behavior of Ru atom in silicon in this paper. Two energy levels E(0.58) and H(0.34) were observed. The pure substitutional Ru in silicon was responsible for the H(0.34), and the E(0.58) was introduced by a complex of a Ru atom and a vacancy (or vacancies). By use of scattered wave-X-alpha (SW-X-alpha) cluster method the theoretical calculation of electronic states for substitutional Ru atom in silicon has been performed. The results obtained were compared with those of experimental measurements.