三体核力影响下的核物质状态方程及中子星物质中的中子质子超流性

本论文介绍了极端条件下核物质研究的现状以及目前常用的几种核多体方法，系统描述了冷、热非对称核物质的状态方程和刀稳定中子星物质中的15。态中子和质子超流性，特别是微观三体核力对此所产生的影响。通过引入微观三体核力，扩展了有限温度的BI．tleclcller-Hal'tree-Fock（FTBHF）理论。利用这一扩展的理沦，详细研究了同位旋非对称热核物质的状态方程、液气相变临界现象以及三体核力对此所产生的影响。在不同的中质比条件下，重点讨论了热核物质液气相变的临界温度和动力学不稳定区域的温度、同位旋相关性。由此表明，三体核力的引入在一定程度上降低了液气相变的临界温度值，在固定的温度和密度下，非对称核物质的压弧随同位旋非对称度的增加而单调的增力日，而且随着核物质温度的升高和非对称度的增加，动力学不稳定区域逐渐缩小。通过与其它理论模型（特别是Di1'ac-BHF方法）所预言的结果相比较，就目前扩展的包含三体核力修正的FTBHF理论与Dilac-BHF方法所计算的临界温度的差异问题，文中给出一种可能的解释。通过计算热核物质的单粒子结合能，给出了有限温度条件下对称能的计算方式，并且细致研究了不同温度、密度下的对称能以及三体核力在高密度区域对对称能的影响。结果表明，微观三体核力强烈影响着高密度区域的对称能，使其对温度的变化更加明显。此外，其它重要物理量（例如中子和质子的单粒子势能、有效质量等）的同位旋依赖性和温度、密度相关性在文中也被详细的讨论。利用质量算子的空穴线展井，表明了在基态关联所导致的对单核子势的重排修正项影响下的HLlgenholtz-VanHove(HVH)定理的恢复程度，并且进一步计算了中子和质子化学势。并且以包含兰体核力的FTBI-方法为基础，研究了热核物质中重排项的密度和温度依赖性并讨论了三体核力对重排项的影响。通过计算不同温度和密度下的核物质中单核子势和核子有效质量，特别是研究和讨论了基态关联效应和三体核力贡献对热核物质中单核子势的影响，表明了基态关联和三体核力对单核子势修正的重要性。利用BHF和BCS的理论方法，计算了β稳定中子星物质中处于150态的中子和质子的对关联能隙，着重研究和讨论了三体核力的影响。结果表明，三体核力对刀稳定物质中｛s0态中子超流性的影响相对较小，但是对，S0态质子超流性具有重要影响，其效应随核子数密度的增大而迅速增强。三体核力的主要作用是强烈地抑制了高密度区刀稳定中子星物质中的150态质子超流性，而且三体核力对中子星物质中，So态超流相的抑制效应主要是通过质子或中子的有效对相互作用而起作用的。

Systematic study of the pi(-)/pi(+) ratio in heavy-ion collisions with the same neutron/proton ratio but different masses

A systematic study of the pi(-)/pi(+) ratio in heavy-ion collisions with the same neutron/proton ratio but different masses can help single out effects of the nuclear mean field on pion production. Based on simulations using the IBUU04 transport model, it is found that the pi(-)/pi(+) ratio in head-on collisions of Ca-48 + Ca-48, Sn-124 + Sn-124, and Au-197 + Au-197 at beam energies from 0.25 to 0.6 GeV/nucleon increases with increasing the system size or decreasing the beam energies. A comprehensive analysis of the dynamical isospin fractionation and the pi(-)/pi(+) ratio as well as their time evolution and spatial distributions demonstrates clearly that the pi(-)/pi(+) ratio is an effective probe of the high-density behavior of the nuclear symmetry energy.

Isospin dependence of S-1(0) proton and neutron superfluidity in asymmetric nuclear matter

We investigate the S-1(0) neutron and proton superfluidity in isospin-asymmetric nuclear matter. We have concentrated on the isospin dependence of the pairing gaps and the effect of a microscopic three-body force. It is found that as the isospin asymmetry goes higher, the neutron S-1(0) superfluid phase shrinks gradually to a smaller density domain, whereas the proton one extends rapidly to a much wider density domain. The three-body force turns out to weaken the neutron S-1(0) superfluidity slightly, but it suppresses strongly the proton S-1(0) superfluidity at high densities in nuclear matter with large isospin asymmetry.

Neutron source from thin foil confined by two laser pulses

Neutron production from a thin deuterium-tritium (D-T) foil irradiated by two intense femtosecond laser pulses from opposite sides with zero phase difference is studied analytically and numerically. For the interaction of a laser pulse of amplitude a = 7, focal area 100 mu m(2) and areal density 4.4 x 10(18) cm(-2) with a D-T plasma foil, about 1.17 x 10(21) neutron s(-1) can be obtained, much more than from other methods. The profiles of the ion and electron densities are also calculated.

Effect of laser spot size on fusion neutron yield in laser-deuterium cluster interactions

The effect of the laser spot size on the neutron yield of table-top nuclear fusion from explosions of a femtosecond intense laser pulse heated deuterium clusters is investigated by using a simplified model, in which the cluster size distribution and the energy attenuation of the laser as it propagates through the cluster jet are taken into account. It has been found that there exists a proper laser spot size for the maximum fusion neutron yield for a given laser pulse and a specific deuterium gas cluster jet. The proper spot size, which is dependent on the laser parameters and the cluster jet parameters, has been calculated and compared with the available experimental data. A reasonable agreement between the calculated results and the published experimental results is found.

Neutron irradiation effect in two-dimensional electron gas of AlGaN/GaN heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different influences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas (2DEG) is very sensitive to neutrons. At a low influence of 6.13 x 10(15) cm(-2), the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 x 10(16) cm(-2), the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit (product of n(s) x mu) of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of n(s) x mu of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of Ge-Ga transmuted from Ga and the recovery of displaced defects.

Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient

Isochronal thermal-annealing behavior of NTD floating-zone silicon grown in hydrogen ambient (called NTD FZ(H) Si) is presented. The dependencies of resistivity and carrier mobility on annealing temperature are determined by room-temperature Hall electrical measurements. Using infrared absorption spectroscopy, hydrogen-related infrared absorption bands evolution for NTD FZ(H) Si were measured in detail. It is demonstrated that compared with NTD FZ(Ar) Si, NTD FZ(H) Si exhibits the striking features upon isochronal annealing in temperature range of 150 similar to 650 degreesC: there appears the formation of an excessive shallow donor at annealing temperature of 500 degreesC. It is shown that the annealing behavior is directly related to the reaction of hydrogen and irradiation-induced defects. The evolution of infrared absorption bands upon temperature reflects a series of complex reaction process: irradiation-induced defects decomposition, breaking of Si-H bonds, migration and aggregation of atomic hydrogen, and formation of the secondary defects. (C) 2002 Elsevier Science B.V. All rights reserved.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Neutron irradiation-infrared based measurement method for interstitial oxygen in heavily boron-doped silicon

A novel method, based on an infrared absorption and neutron irradiation technique, has been developed for the determination of interstitial oxygen in heavily boron-doped silicon. The new procedure utilizes fast neutron irradiated silicon wafer specimens. On fast neutron irradiation, the free carriers of high concentration in silicon can be trapped by the irradiated defects and the resistivity increased. The resulting calibration curve for the measurement of interstitial oxygen in boron-doped silicon has been established on the basis of the annealing behaviour of irradiated boron-doped CZ silicon.

Quakes in solid quark stars

A starquake mechanism for pulsar glitches is developed in the solid quark star model. It is found that the general glitch natures (i.e., the glitch amplitudes and the time intervals) could be reproduced if solid quark matter, with high baryon density but low temperature, has properties of shear modulus mu(c) = 10(30-34) erg/cm(3) and critical stress sigma(c) = 10(18similar to24) erg/cm(3). The post-glitch behavior may represent a kind of damped oscillations. (C) 2004 Elsevier B.V. All rights reserved.