A transmission electron microscopy study of microstructural defects in proton implanted silicon

The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: {001} platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. (C) 1996 American Institute of Physics.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Thermal analysis of microstructural evolution of Al2O3 surface modified layers

Solidification behavior and microstructural evolution of surface modified layers in plasma cladding technique are studied via numerical simulations. Both the coupling effect of temperature and solid volume fraction are considered in the proposed thermal analytical model, by which the transient temperature distributions are calculated and the shape of melting pool is determined. Furthermore, we perform microscopic thermal analysis on the nucleation and growth behaviors of ceramic hardening phases and dendrites, as well as the kinetics of related two-phase flow systems. By comparing with experimental observations, the evolution mechanisms of the morphology of Al2O3 ceramic hardening layer are explained. Based on the above results, a relationship among the scanning velocity of plasma stream, dendritic growth rate and the advancing speed of solid/liquid interface is found, and an energy criterion is proposed for predicting the pushing/engulfing transition of ceramic particles by grain growth fronts. (C) 2009 Elsevier B.V. All rights reserved.

Microstructural evolution in silicon implanted with chlorine ions

In the present work p-type Si specimens were implanted with Cl ions of 100 keV to successively increasing fluences of 1 x 10(15), 5 x 10(15), 1 x 10(16) and 5 x 10(16) ions cm(-2) and subsequently annealed at 1073 K for 30 min. The microstructure was investigated with the transmission electron microscopy (TEM) in both the plane-view and the cross-sectional view. The implanted layer was amorphized after chlorine implantation even at the lowest ion fluence, while re-crystallization of the implanted layer occurs on subsequent annealing at 1073 K. In the annealed specimens implanted above the lowest fluence three layers along depth with different microstructures were found, which include a shallow polycrystalline porous layer, a deeper single-crystalline layer containing high density of gas bubbles, a well separated deeper layer composed of dislocation loops in low density. With increasing ion fluence the thickness of the porous polycrystalline layer increases. It is indicated that chlorine can suppress the epitaxial re-crystallization of implanted silicon, when the implant fluence of Cl ions exceeds a certain level.

Constrain intergalactic medium from the SZ effect map

In this paper, we try to detect the SZ effect in the 2MASS DWT clusters and less bound objects in order to constrain the warm-hot intergalactic medium distribution on large scales by cross-correlation analysis. The results of both observed WMAP and mock SZ effect map indicate that the hot gas distributes from inside as well as outside of the high density regions of galaxy clusters, which is consistent with the results of both observation and hydro simulation. Therefore, the DWT measurement of the cross-correlation would be a powerful tool to probe the missing of baryons in the universe.

A velocity map ion-imaging study on C2H5SH and C3H7SH photodissociation at 243 nm

Photodissociation dynamics Of C2H5SH, i-C-3-H7SH and n-C3H7SH at 243.1 nm were investigated using velocity map ion-imaging method. H-atom photolysis products were detected by a (2 + 1) resonance enhanced ionization scheme. Both the angular distribution and translational energy distribution of the H-atom elimination processes were determined from the ion images of the H-atom products. The experimental results indicate that the H-atom eliminations from these molecules are mainly direct and fast dissociation processes from a repulsive potential energy state. And a more statistical dissociation process that likely occurs oil the ground state via internal conversion has also been observed. Dissociation energies of the S-H bonds are also derived from the H-atom product translational energy distributions. (C) 2002 Elsevier Science B.V. All rights reserved.

Wear mechanism map of uncoated HSS tools during drilling die-cast magnesium alloy

A wear mechanism map of uncoated high-speed steel (HSS) tools was constructed under the conditions of dry-drilling die-cast magnesium alloys. Three wear mechanisms appear in the map based on the microanalysis of drilled HSS tools by SEM, including adhesive wear, abrasive wear and diffusion wear. In the map, there exists a minor wear region which is called "safety zone". This wear mechanism map will be a good reference for choosing suitable drilling parameters when drilling die-cast magnesium alloys.

The study of banded spherulite patterns by coupled logistic map lattice model

Banded spherulite patterns are simulated in two dimensions by means of a coupled logistic map lattice model. Both target pattern and spiral pattern which have been proved to be existent experimentally in banded spherulite are obtained by choosing suitable parameters in the model. The simulation results also indicate that the band spacing is decreased with the increase of parameter mu in the logistic map and increased with the increase of the coupling parameter epsilon, which is quite similar to the results in some experiments. Moreover, the relationship between the parameters and the corresponding patterns is obtained, and the target patterns and spiral patterns are distinguished for a given group of initial values, which may guide the study of banded spherulite.

Simulation of Banded Spherulite Patterns by Coupled Logistic Map Lattice Model in Three Dimensions

Banded spherulite patterns are simulated in three dimensions by means of a Coupled Logistic map lattice model. The patterns obtained by numerical calculation are consistent with those in experiments. The simulation results also indicate that the hand spacing is decreased with the increase of parameter mu in the Logistic map and increased with the increase of the coupling parameter e for cube lattices, and increased with the increase of the thickness of the lattice for polymer film, which is quite similar to the results in some experiments. Spiral pattern in three dimensions is also shown in this paper, which helps us understand the form of banded spherulite in polymers.

PREPARATION AND MICROSTRUCTURAL CHARACTERIZATION OF SURFACE-MODIFIED NANOSIZED SNO2 PARTICLES

Nanosized stannic oxide particles modified with a layer of DBS were successfully prepared through the colloidal chemical method and their microstructures were characterized. FTIR and XPS were used for the determination of the main components. It can be proved that the nanosized SnO2 particles were capped by DBS. The sizes of particle were determined by TEM and XRD. By the investigation of XPS, we can conclude that there are a lot of oxygen vacancies in the surface of the nanoparticulates. Based on this conclusion, the ESR signal of the sample can be explained.

A preliminary genetic map of Zhikong scallop (Chlamys farreri Jones et Preston 1904)

Zhikong scallop (Chlamys farreri Jones et Preston 1904) is one of the most important aquaculture species in China. The development of a genetic linkage map would provide a powerful tool for the genetic improvement of this species. Amplified fragment length polymorphism (AFLP) is a PCR-based technique that has proven to be powerful in genome fingerprinting and mapping, and population analysis. Genetic maps of C. farreri were constructed using AFLP markers and a full-sib family with 60 progeny. A total of 503 segregating AFLP markers were obtained, with 472 following the Mendelian segregation ratio of 1:1 and 31 markers showing significant (P< 0.05) segregation distortion. The male map contained 166 informative AFLP markers in 23 linkage groups covering 2468 cM. The average distance between markers was 14.9 cM. The female genetic map consisted of 198 markers in 25 linkage groups spanning 3130 cM with an average inter-marker spacing of 15.8 cM. DNA polymorphisms that segregated in a 3:1 ratio as well as the AFLP markers that were heterozygous in both parents were included to construct combined linkage genetic map. Five shared linkage groups, ranging from 61.1 to 162.5 cM, were identified between the male and female maps, covering 431 cM. Amplified fragment length polymorphism markers appeared to be evenly distributed within the linkage groups. Although preliminary, these maps provide a starting point for the mapping of the functional genes and quantitative trait loci in C. farreri.

Genetic linkage map of bay scallop, Argopecten irradians irradians (Lamarck 1819)

The bay scallop (Argopecten irradians irradians Lamarck 1819) has become one of the most important aquaculture species in China. Genetic improvement of cultured bay scallop can benefit greatly from a better understanding of its genome. In this study, we developed amplified fragment length polymorphisms (AFLPs) and simple sequence repeat markers from expressed sequence tags (EST-SSRs) for linkage analysis in bay scallop. Segregation of 390 AFLP and eight SSR markers was analysed in a mapping population of 97 progeny. Of the AFLP markers analysed, 326 segregated in the expected 1:1 Mendelian ratio, while the remaining 74 (or 19.0%) showed significant deviation, with 33 (44.6%) being deficient in heterozygotes (A/a). Among the eight polymorphic EST-SSR loci, one marker (12.5%) was found skewing from its expected Mendelian ratios. Eighteen per cent of the markers segregating from female parent were distorted compared with 21% of the markers segregating from male parent. The female map included 147 markers in 17 linkage groups (LGs) and covered 1892.4 cM of the genome. In the male map, totally 146 AFLP and SSR markers were grouped in 18 LGs spanning 1937.1 cM. The average inter-marker spacing in female and male map was 12.9 and 13.3 cM respectively. The AFLP and SSR markers were distributed evenly throughout the genome except for a few large gaps over 20 cM. Although preliminary, the genetic maps presented here provide a starting point for the mapping of the bay scallop genome.