Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC

Homoepitaxial growth of SiC on a Si-face (0 0 0 1) GH-SIC substrate has been performed in a modified gas-source molecular beam epitaxy system with Si2H6 and C2H4 at temperatures ranging 1000 1450 degreesC while keeping a constant SiC ratio (0.7) in the gas phase. X-ray diffraction patterns, Raman scattering measurements. and low-temperature photoluminescence spectra showed single-crystalline SiC. Mesa-type SiC p-n junctions were obtained on these epitaxial layers, and their I-V characteristics are presented. (C) 2001 Elsevier Science B.V. All rights reserved.

Raninfall and Slope Characteristics Affecting Soil Erosion on Hillsopes

A soil erosion model including interrill erosion and rill erosion was developed for hillslope. The rainfall and slope characteristics affecting soil erosion on hillslopes was analyzed by simulation. The results show that the slope length and gradient, rainfall intensity and process have varying influence on runoff and soil erosion. The unit discharge of runoff and erosion rate increases with increases in the rainfall intensity and the slope length. The same precipitation but with different rainfall processes may cause different runoff and erosion results. The effect of the slope gradient on runoff and soil erosion can be both positive and negative. There exists a critical slope gradient for runoff and soil erosion.

Numerical Study on the Spatial and Temporal Characteristics of Water Quality in the Taihu Lake of China

Taihu Lake is the third largest fresh water lake in China. With the fast economic development, abundant industrial and agricultural waste water has been discharged into Taihu Lake, causing the eutrophication of the water quality, which greatly affected the water utility. In the past decades, the treatment of Taihu Lake has witnessed limited success. Therefore, it is practically and theoretically significant to study the eutrophication of Taihu Lake. This research has focused on the issue of water quality including the characteristics of spatial and temporal distributions, and the rules of nutrient diffusion in the Taihu lake area. Based on the monitoring data, the basis distribution characteristics of water quality in Taihu Lake are analyzed. Comparing Taihu Lake with other Lakes shows that one important reason for Taihu eutrophication is the long period of water retention. A transporting and diffusing model of Taihu nutrient is developed by combining with the hydrodynamics model. Using the model, the concentration field of the total phosphorus (TP) and the influence of wind-driven current are numerically investigated, which leads to the conclusion that the flow field has a great influence on the spatial and temporal distributions of TP in Taihu Lake. Furthermore, the effect for improving the water quality by the project of water diversion from the Yangtze River to Taihu Lake was analyzed by simulation. The results demonstrate that short-term water diversion cannot improve the water quality of the heavily-polluted Meiliang Bay and the western bank areas of Taihu Lake.

Summer monsoon intensity controls C-4/C-3 plant abundance during the last 35 ka in the Chinese Loess Plateau: Carbon isotope evidence from bulk organic matter and individual leaf waxes

IEECAS SKLLQG

Chemisorption and reaction characteristics of methyl radicals on Cu(110)

Methyl radicals are generated by pyrolysis of azomethane, and the condition for achieving neat adsorption on Cu(110) is described for studying their chemisorption and reaction characteristics. The radical-surface system is examined by X-ray photoemission spectroscopy, ultraviolet photoemission spectroscopy, temperature-programmed desorption, low-energy electron diffraction (LEED), and high-resolution electron energy loss spectroscopy under ultrahigh vacuum conditions. It is observed that a small fraction of impinging CH3 radicals decompose into methylene possibly on surface defect sites. This type of CH2 radical has no apparent effect on CH3(ads) surface chemistry initiated by dehydrogenation to form active CH2(ads) followed by chain reactions to yield high-mass alkyl products. All thermal desorption products, such as H-2, CH4, C2H4, C2H6, and C3H6, are detected with a single desorption peak near 475 K. The product yields increase with surface coverage until saturation corresponding to 0.50 monolayer of CH3(ads). The mass distribution is, however, invariant with initial CH3(ads) coverage, and all desorbed species exhibit first-order reaction kinetics. LEED measurement reveals a c(2 x 2) adsorbate structure independent of the amount of gaseous exposure. This strongly suggests that the radicals aggregate into close-packed two-dimensional islands at any exposure. The islanding behavior can be correlated with the reaction kinetics and is deemed to be essential for the chain propagation reactions. Some relevant aspects of the CH3/Cu(111) system are also presented. The new results are compared with those of prior studies employing methyl halides as radical sources. Major differences are found in the product distribution and desorption kinetics, and these are attributed to the influence of surface halogen atoms present in those earlier investigations.

Synthesis and surface characteristics of zirconia and modified zirconia: Performance of CO hydrogenation

ZrO2-A and ZrO2-B catalysts were prepared by two different coprecipitation methods and their performance of CO hydrogenation was studied. The results indicated that ZrO2 and Li-, Pd- and Mn-modified ZrO2 catalysts exhibited good selectivity and high STY to higher alcohols. The surface characteristics of ZrO2-A and ZrO2-B samples were investigated by means of BET, NH3-TPD, XRD and UV Raman technique. The tetragonal zirconia on the surface region of ZrO2-A and Li-Pd-Mn/ZrO2-A catalysts may be responsible for the high selectivity towards ethanol, while the monoclinic zirconia on the surface of ZrO2-B and Li-Pd-Mn/ZrO2-B catalysts may be crucial to the high isobutanol selectivity.